A study of the design of ZnO thin film pressure sensors

Ion beam fluence induced variation in optical band-gap of ZnO nanowires

“…On behalf of its exceptionally important applications, ZnO attracts the attention of both the research as well as entrepreneur community [3][4][5][6][7][8]. Its wide optical band-gap, large excitonic binding energy (60 meV), higher breakdown voltages, ability to sustain large electric fields, lower electronic noise, efficient UV stimulated emission at room temperature are some remarkable features due to which it possess a broad range of applications from photo-detectors and optical switches, nanolasers and LEDs, piezoelectric generators to chemical and bio-sensors [9][10][11][12][13][14][15]. In addition to these exciting properties, the different shapes and morphology (nanowires, nanorods, nanobelts, nanohelices and nanotubes) of ZnO at nanoscale add more functionality to its application base [16][17][18][19].…”

Structural and rectifying junction properties of self-assembled ZnO nanoparticles in polystyrene diblock copolymers on (100)Si substrates

“…Due to its high exciton binding energy (60 meV) at room temperature, it shows high promise for UV lasing action and optical detection [2]. The growing interest in electronic transport devices [3,4], its well known gas-sensing capabilities, and transparency to visible light, make it one of the technologically important material systems for devices ranging from solar cells, to UV light emitting/detecting devices, to pressure/gas sensor applications. Reduced dimensionality to nanoscale dimensions is expected to enhance such properties, and the development of controlled delivery processes on Si wafers and on other technologically important surfaces, as studied in this work, will result in functional nano-device applications.…”

Development and Characterization of ZnO Piezoelectric Thin Film Sensors on GH4169 Superalloy Steel Substrate by Magnetron Sputtering

“…Chang et al designed a ZnO thin film pressure sensor running at high temperatures and obtained structures similar to silicon-on-insulator ones by growing ZnO thin films on SiO 2 /(100) Si substrates. The response value of the pressure sensor was proportional to pressure, greater than 8 mΩ/psi, and the authors obtained the change of gas pressure by measuring the change of resistivity [ 33 ]. Based on these, Karina Jeronimo et al [ 34 ] discussed the effect of ZnO fillers for piezoelectric properties and Lee et al [ 11 ] analyzed the influence of the annealing temperature on enhancing the output voltage of a force sensor.…”

“…These properties provide a research basis for the application of ZnO piezoelectric film sensors in the field of structural health monitoring. Normally, a piezoelectric film sensor is fixed on the monitored mechanism by an adhesive to diagnose the health status of the target, such as a pressure liquid flow [ 32 ], breath and heart rate [ 35 ], gas pressure [ 33 ], etc. The research background of this paper is the fabrication of smart bolts.…”