A study of silicon tetrachloride reduction with hydrogen in microwave discharge

Гусев, А. В.; Корнев, Р. А.; Sukhanov, A. Yu.

doi:10.1134/s0018143913050032

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…5), it is possible to assume that their formation takes place directly in the after glowing zone similar to chlorine-containing silicon compounds [19]. At the same place (B zone, Fig.…”

Section: Resultsmentioning

confidence: 99%

Hydrogen Reduction of Germanium Tetrafluoride in RF-Discharge

Корнев

Сенников

2015

Plasma Chem Plasma Process

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A germanium tetrafluoride conversion into germanium and polyfluorogermanes in hydrogen inductively coupled RF-discharge plasma (13.56 MHz) has been experimentally studied. The product ratio is dependent on specific energy contribution into discharge. Conditions that ensure practically complete conversion of GeF 4 and the yield of germanium equal to 86 % have been found. The analysis of exhaust gases, of chemically active plasma and of condensed phase by emission-and IR-spectroscopy as well as by mass spectrometry made it possible to propose mechanism accounting for the formation of observed intermediate species and final products.

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“…5), it is possible to assume that their formation takes place directly in the after glowing zone similar to chlorine-containing silicon compounds [19]. At the same place (B zone, Fig.…”

Section: Resultsmentioning

confidence: 99%

Hydrogen Reduction of Germanium Tetrafluoride in RF-Discharge

Корнев

Сенников

2015

Plasma Chem Plasma Process

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“…The setup used in the experimental study of the plasma chemical reduction of silicon tetrachloride was schematized in an earlier work [9]. The reactor ( Fig.…”

Section: Methodsmentioning

confidence: 99%

Silicon tetrachloride conversion in microwave discharge hydrogen plasma

Корнев

Шапошников

Gusev

2015

Theor Found Chem Eng

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Silicon tetrachloride conversion in microwave discharge hydrogen plasma has been experimen tally investigated. The main products of this process are silicon, hexachlorodisilane, and polychlorosilanes. The proportions of the products depend on specific energy input and on the place in which the reactants (SiCl 4 and H 2 ) are introduced into the plasma discharge zone. The conditions ensuring a 90% silicon yield have been determined. The gas dynamic and heat transfer processes in a cylindrical reactor have been numer ically simulated for these conditions. The temperature interval in the discharge zone (2000-2500 K) and the rate of quenching of products (silicon containing radicals) have been estimated. Experimental data of this study and their comparison with data available from the literature suggest a hypothesis concerning the reac tions responsible for the formation of silicon, hexachlorodisilane, and polychlorosilanes.

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