A Study of SiGe HBT Signal Sources in the 220–330-GHz Range

Tomkins, A.; Dacquay, E.; Chevalier, P.; Hasch, Jürgen; Chantre, A.; Sautreuil, B.

doi:10.1109/jssc.2013.2265494

Cited by 103 publications

(23 citation statements)

References 15 publications

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“…Some groups have reported power combining from multiple oscillators leading to a high output power, but they tend to consume large dc power and need additional combining networks [18]- [20]. There have also been reports on multiplier-based signal sources working beyond 300 GHz [21]- [25], but most of them need an external low-frequency signal source for operation and suffer from increased chip size and dc power dissipation. This paper introduces two high-power fundamental-mode oscillators based on a 250-nm InP HBT technology operating around 300 GHz, which adopt the common-base configuration for the oscillator core instead of the common-emitter configuration typically used.…”

Section: Introductionmentioning

confidence: 99%

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Yun

Yoon

Kim

et al. 2014

IEEE Trans. Microwave Theory Techn.

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Two fundamental-mode oscillators operating around 300 GHz, a fixed-frequency oscillator and a voltage-controlled oscillator (VCO), have been developed in this work based on a 250-nm InP heterojunction bipolar transistor (HBT) technology. Both oscillators adopted the common-base configuration for the cross-coupled oscillator core, providing higher oscillation frequency compared to the conventional common-emitter cross-coupled topology. The fabricated fixed-frequency oscillator and the VCO exhibited oscillation frequency of 305.8 GHz and 298.1-316.1 GHz (18-GHz tuning range) at dc power dissipation of 87.4 and 88.1 mW, respectively. The phase noise of the fixed-frequency oscillator was measured to be dBc/Hz at 10 MHz offset. The peak output power of 5.3 dBm (3.8% dc-to-RF efficiency) and 4.7 dBm (3.2% dc-to-RF efficiency) were respectively achieved for the two oscillators, which are the highest reported power for a transistor-based single oscillator beyond 200 GHz. Index Terms-Frequency control, heterojunction bipolar transistors (HBT), voltage-controlled oscillators (VCO). 0018-9480

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Section: Introductionmentioning

confidence: 99%

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

Yun

Yoon

Kim

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…A variety of critical building blocks such as amplifiers [5], VCOs [6], multiplier-based signal sources [6], [7], receivers [8], and even Doppler radar transceivers [9] have been demonstrated in these technologies at frequencies above 200 GHz. These developments have paved the way for new applications such as autonomous-navigation mini robots and mini drones, or touchless gesture control for miniature wearable and IoT devices [10], [11], all of which will benefit from the availability of low-cost, large-volume, high-efficiency, low-power, silicon J -band (220-330 GHz) transceivers.…”

Section: N Recent Years Several Foundries Have Reported Sigementioning

confidence: 99%

“…Although both the fully wired SiGe HBT and the fully wired 55-nm n-MOSFET have a measured f MAX of over 300 GHz in this technology, only HBTbased topologies were considered for the doubler due to the much stronger, exponential, non-linearity of the HBT, making it ideal for multiplier circuits. Common-collector (CC) [6], [21] and common-emitter (CE) doubler topologies [7], with and without input resonators at the second harmonic, were analyzed. In all cases, only balanced doubler topologies were considered since they provide inherent odd-harmonic suppression [22].…”

Section: A 240-ghz Doublermentioning

confidence: 99%

A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

Shopov

Balteanu

Hasch

et al. 2016

IEEE J. Solid-State Circuits

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A 234-261-GHz signal source with record 7.2-dBm output power at 240 GHz and −105 dBc/Hz phase noise at 10-MHz offset is reported. Fabricated in a production 55-nm SiGe BiCMOS process with HBT f T / f MAX of 330/350 GHz, the circuit includes a 120-GHz fundamental frequency VCO with 1.2-V AMOS varactors, a broadband MOS-HBT cascode LO tree driving a divide-by-128 chain, and a doubler with a record drain efficiency of 11.9%. The total power consumption of the signal source is 386 mW resulting in a DC-to-RF efficiency of 1.3%. A detailed discussion of the candidate LO-tree and doubler topologies and of the design methodology, which capitalizes on the MOS-HBT cascode and unique features of the 55-nm SiGe BiCMOS process, is provided. Index Terms-Divider, frequency doubler, J-band circuit, mm-wave circuits, MOS-HBT cascode, SiGe BiCMOS, signal source, VCO.

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“…With the rapid advancement of HBT technology and high f t and f max , it has become possible to build fundamental millimeter wave sources in Silicon Germanium (SiGe) technology [1]. Recently, fundamental mode voltage controlled oscillators (VCOs) operating up to 181 GHz [2], 186 GHz [3], and 245 GHz [4] have been reported in SiGe BiCMOS technology. Moreover, VCO circuits can be used as benchmark to test and compare technologies in terms of speed and noise performance.…”

Section: Introductionmentioning

confidence: 99%

“…The simplified concept diagram is slightly modified to make it suitable for high frequency applications by putting an additional inductor (L E ) in parallel to C var ( Fig. 1(b)) [4] [5]. This additional inductor reduces the effective capacitance at the emitter node of Q1.…”

Section: Introductionmentioning

confidence: 99%

Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology

Ali

Fischer

Thiede

2015

2015 German Microwave Conference

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Two low power fundamental mode voltage controlled oscillators (VCO-I and VCO-II) in the D-band frequency range are presented in this paper. The oscillator core is Colpitts type with an additional common base transistor in cascode configuration to avoid a separate output buffer. The chips are fabricated in a 0.13 µm SiGe BiCMOS HBT technology which offers f t and f max of 300 GHz and 500 GHz, respectively. VCO-I has a tuning range from 138.6 to 147.7 GHz while that for VCO-II is from 142.3 to 150.9 GHz. Both oscillators deliver output power from -1 to -6 dBm to 50 Ω load and consume 47 mW from a -2.8 V supply. A phase noise of -77 dBc/Hz at 5 MHz offset frequency was measured.

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A Study of SiGe HBT Signal Sources in the 220–330-GHz Range

Cited by 103 publications

References 15 publications

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology

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A Study of SiGe HBT Signal Sources in the 220–330-GHz Range

Cited by 103 publications

References 15 publications

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

300-GHz InP HBT Oscillators Based on Common-Base Cross-Coupled Topology

A 234–261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4–7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output

Low power fundamental VCO design in D-band using 0.13 &#x00B5;m SiGe BiCMOS technology

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Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology