J Electron Test
 2017
DOI: 10.1007/s10836-017-5694-5
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A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of Single Event Transient

Tengyue Yi
1
,
Yi Liu
2
,
Yintang Yang
3
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Cited by 3 publications
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HSPICE model and circuit simulation for a single-event effect caused by ions at different incident positions

Yi
1
,
Liu
2
,
Wu
3
et al. 2018
J Comput Electron
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HSPICE model and circuit simulation for a single-event effect caused by ions at different incident positions

Yi
1
,
Liu
2
,
Wu
3
et al. 2018
J Comput Electron
3
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2
0
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LET-dependent model of single-event effects in MOSFETs

Xu
1
,
Yi
2
,
Liu
3
et al. 2021
J Comput Electron
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Single Event Effect prediction early in the design phase and latchup case study on ASIC

Andrianjohany1,
Augustin2,
Coulié
3
et al. 2018
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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