A study of iron incorporation in LEC-grown indium phosphide

Fornari, R.; Gilioli, E.; Moriglioni, M.; Thirumavalavan, M.; Zappettini, A.

doi:10.1016/0022-0248(96)00076-0

Cited by 6 publications

(6 citation statements)

References 9 publications

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“…It should be mentioned that, although approximated, the present model for iron activation is able to explain the experimental data presented in [7,11]. Furthermore, it is substantiated by other experimental observations: (i) the axial diffusion of transition elements was effectively seen to take place in LEC crystals [21]; (ii) the presence of small Fe precipitates dispersed in the InP matrix [22].…”

Section: Discussionsupporting

confidence: 82%

“…The problem of Fe segregation has already been discussed by different authors [3,[5][6][7][8][9][10], and it appears that there is a complex correlation between growth parameters, distribution coefficient and electrical activity of Fe in bulk LEC InP. For instance, it was reported that the pulling rate and rotational speeds affect the Fe distribution coefficient [6] as well as the electrical activity of iron in LEC InP [7]. More recently, combined chemical, optical and electrical measurements on Fe-doped bulk InP showed that the electrical activity (expressed as ratio Fe active /Fe total ) of the incorporated Fe changes dramatically from top to tail of the LEC crystals [11]: the ratio was seen to be about 0.7 in the crystal top and about 0.3 towards the tail.…”

Section: Introductionmentioning

confidence: 96%

“…a concentration gradient between top and bottom of the crystals, which limits the optimal compensation ratio to a relatively small fraction of the LEC ingots. The problem of Fe segregation has already been discussed by different authors [3,[5][6][7][8][9][10], and it appears that there is a complex correlation between growth parameters, distribution coefficient and electrical activity of Fe in bulk LEC InP. For instance, it was reported that the pulling rate and rotational speeds affect the Fe distribution coefficient [6] as well as the electrical activity of iron in LEC InP [7].…”

Section: Introductionmentioning

confidence: 97%

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On the electrical activity of Fe in LEC indium phosphide

Fornari¹

1999

Semicond. Sci. Technol.

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A model for the incorporation of electrically active Fe in LEC InP is presented. The concentration of Fe active in a given cross section of the ingot is expressed as a function of the corresponding grown fraction and the period of time between the solidification of that particular cross section and the end of the pulling. Implicitly, this means that the Fe activity depends on the thermal history and the concentration of In vacancies of that cross section. The final relationship accounts well for experimental results such as (i) an Fe activation higher in the crystal top with respect to the crystal tail and (ii) an Fe activation slightly higher in crystals pulled at lower speed.

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Section: Discussionsupporting

confidence: 82%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 97%

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On the electrical activity of Fe in LEC indium phosphide

Fornari¹

1999

Semicond. Sci. Technol.

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“…However, due to the very small distribution coefficient, a large Fe concentration gradient exists between top and tail of the crystals, which limits the optimal compensation ratio to a relatively small fraction of the LEC crystals. The problem of Fe segregation has already been discussed in many papers [1][2][3][4][5][6][7][8][9]; however no clear correlation has so far been established between growth parameters, distribution coefficient and electrical activity of Fe in bulk LEC InP. In previous papers the effect of different growth parameters, such as pulling rate and rotational speeds, on the distribution coefficient of iron were studied [3] and some hypotheses about the electrical activity of iron in LEC InP were advanced [4].…”

Section: Introductionmentioning

confidence: 99%

Incorporation and electrical activity of Fe in LEC InP

Fornari¹,

Zappettini²,

Bagnoli³

et al. 1998

Semicond. Sci. Technol.

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InP crystals grown by the liquid encapsulated Czochralski method under different parameters are investigated by Hall effect, IR absorption, atomic absorption spectroscopy and glow discharge mass spectroscopy. The concentrations of total and electrically active Fe atoms (substitutional for In) in ingots pulled under different growth conditions are independently determined. The results prove that the pulling rate can affect the effective Fe distribution coefficient. Quite surprisingly, we found that the electrical activity of the incorporated iron (expressed as ratio Fe active /Fe total ) changes dramatically between the top and tail of the LEC crystals.

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“…17 Therefore, one might expect to see Fe-V In pairs if these iron atoms were in interstitial positions and acting as donors. Furthermore, it is believed that in InP, iron atoms diffuse interstitially and do not act as electrically active center.…”

Section: Discussionmentioning

confidence: 99%

Observation of Fe-related defects in neutron irradiated semi-insulating InP

Marı́

Hernández-Fenollosa

Navarro

2001

Journal of Applied Physics

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Articles you may be interested inComplementary infrared and transmission electron microscopy studies of the effect of high temperature-high pressure treatments on oxygen-related defects in irradiated silicon Effects of annealing on the electrical properties of Fe-doped InP J. Appl. Phys. 86, 981 (1999); 10.1063/1.370835 Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAsOptical absorption and positron lifetime measurements have been performed on Fe-doped semi-insulating InP single crystals irradiated with thermal neutrons in a wide dose range from 0.1 to 2.7ϫ10 17 n cm Ϫ2 . Two lifetimes were found: 1 ϭ210 ps is constant in all the irradiation range; and 2 ϭ340 ps reaches an intensity of almost 40% at the higher fluence used. When comparing these results with those obtained on unintentionally doped InP, a large increase of the longest lifetime is observed, from 300 ps in the nondoped InP to 340 ps in the semi-insulating InP. The increase of the second lifetime in InP:Fe means that the positron traps are less attractive to positrons. These positron traps have been associated to a complex defect generated by the main neutron-originated defect, the indium vacancy, and the clusters or interstitial atoms of Fe. The optical absorption spectra show a background absorption related to Fe precipitates in as-grown InP:Fe. This background absorption disappears after neutron irradiation, suggesting the destruction of Fe precipitates by the energetic particles generated in the transmutation process of 115 In.

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A study of iron incorporation in LEC-grown indium phosphide

Cited by 6 publications

References 9 publications

On the electrical activity of Fe in LEC indium phosphide

On the electrical activity of Fe in LEC indium phosphide

Incorporation and electrical activity of Fe in LEC InP

Observation of Fe-related defects in neutron irradiated semi-insulating InP

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