Observation of Fe-related defects in neutron irradiated semi-insulating InP

Marı́, B.; Hernández-Fenollosa, M.A.; Navarro, Francisco Javier Navarro

doi:10.1063/1.1343891

Cited by 3 publications

References 22 publications

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Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

Wang

Fung

et al. 2005

Applied Physics Letters

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GaN epilayers grown on sapphire substrate were irradiated with various dosages of neutrons and were characterized using Micro-Raman and photoluminescence. It was found that the A 1 ͑LO͒ peak in the Raman spectra clearly shifted with neutron irradiation dosage. Careful curve fitting of the Raman data was carried out to obtain the carrier concentration which was found to vary with the neutron irradiation dosage. The variation of the full width at half maximum height of the photoluminescence was consistent with the Raman results. The neutron irradiation-induced structural defects ͑likely to be Ge Ga ͒ give rise to carrier trap centers which are responsible for the observed reduction in carrier concentration of the irradiated GaN.

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Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

Wang

Fung

et al. 2005

Applied Physics Letters

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Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Wang

et al.

Conference on Optoelectronic and Microelectronic Materials and Devices, 2004.

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Neutron irradiation induced defects and their effects on the carrier concentration of GaN epilayers are investigated with Raman scattering and X-ray diffraction techniques. Relative to the as-grown sample, the neutronirradiated samples exhibit a clear variation in the position and lineshape of the A 1 (LO)-mode Raman peak as well as in the fullwidth at half-maximum height (FWHM) of the XRD rocking curves. Careful curve fitting and adequate calculations give the carrier concentrations of the irradiated GaN. It is found that the defects induced by neutron irradiation act as carrier trap centres which capture the electron carriers so that the carrier concentration of the irradiated GaN is reduced.

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Positron annihilation measurements in high energy alpha irradiated undoped indium antimonide

Pan

Mandal

Mukherjee

et al. 2014

Int. J. Mod. Phys. B

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Positron annihilation lifetime spectroscopy and Doppler broadening annihilation line-shape measurements were carried out in 40 MeV alpha-irradiated undoped InSb. After irradiation the sample was subjected to an isochronal annealing over temperature region of 25°C–400°C with annealing time of 30 min at each set temperature. After each annealing the positron measurements were carried out at room temperature. Formation of radiation induced defects and their recovery with annealing temperature were investigated. A three component positron lifetime analysis was undertaken to observe the trapping of positrons in the sample after irradiation and during annealing. The average positron lifetime value τ avg = 313 ps at room temperature after irradiation indicated the presence of defects and the high value of τ2 at room temperature suggested that the probable defects were divacancies. A two stage recovery of defects was observed during post irradiation isochronal annealing over the temperature region 25°C–400°C. The variations in line-shape parameter (S) and defect specific parameter (R) during annealing in the temperature region 25°C–400°C resembled the behavior of τ avg indicating the migration of vacancies, formation of vacancy clusters and the disappearance of defects between 300°C to 400°C.

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Observation of Fe-related defects in neutron irradiated semi-insulating InP

Cited by 3 publications

References 22 publications

Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Positron annihilation measurements in high energy alpha irradiated undoped indium antimonide

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