A study of interface states of directly bonded silicon-on-insulator structures

Buldygin, S.A.; Golod, S. V.; Камаев, Г. Н.; Skok, E. M.

doi:10.1016/s0022-0248(99)00657-0

Cited by 6 publications

(1 citation statement)

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“…These slow components would be due to minority carrier traps. 4,21,22) Figures 2(a) and 2(b) show excess carrier decay curves for the as-grown-surface samples excited by the 266 nm laser. Unlike in the case of 355 nm excitation, the decay curves exhibited initially fast decay components and subsequently slow decay components.…”

Section: Decay Curvesmentioning

confidence: 99%

Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers

Kato¹,

Yoshida²,

Ichimura³

2012

Jpn. J. Appl. Phys.

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For the fabrication of very high voltage SiC devices, it is essential to know the surface recombination velocity to accurately control the carrier lifetime. This study shows experimental results on the carrier lifetime in free-standing n-type 4H-SiC epilayers with several thicknesses and under two surface conditions to estimate the surface recombination velocity. The surface with chemical–mechanical polishing (CMP) was found to have lower surface recombination velocities than the as-grown epilayer surface. Similarly, the surface recombination velocity after CMP was low on the Si-face compared with that on the C-face. In addition, the surface recombination velocities on Si- and C-faces after CMP were quantitatively evaluated by comparison of experimental results with numerical calculations.

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Section: Decay Curvesmentioning

confidence: 99%