A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells

Chen, W.; Barnaby, Hugh; Kozicki, Michael; Edwards, Arthur H.; Gonzalez-Velo, Y.; Fang, Rendong; Holbert, Keith E.; Yu, S.S.; Yu, Weijie

doi:10.1109/tns.2015.2478883

Cited by 24 publications

(23 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For metal-oxide ECM cells, e.g., Cu-doped HfO 2 , changes in HRS and V set are reported [91], [93], [95], [107], [118]. Similar to VCM memory, oxygen ions, oxygen vacancies, and charge are induced in the oxide layer of oxide ECM memory.…”

Section: Resistive Random Access Memorymentioning

confidence: 91%

“…Unlike a vast number of metal-oxide and chalcogenide ECM memories that report changes to HRS or pristine resistance states [95], [97], [98], [107], [118], [125], [127], [131], the SiC ECM cells showed no changes to any resistance states, nor conduction mechanisms, as seen in Fig. 12.…”

Section: Resistive Random Access Memorymentioning

confidence: 94%

“…Radiation-induced oxygen vacancies can inhibit formation of metallic filament, resulting in increase in V set , attributed to either scattering of Cu ions or internal field reduction [91], [95], [93], [107]. Induced traps can also reduce HRS [95], [107], [118]. Unlike VCM memory, once a metallic filament is formed, the radiation induced oxygen vacancies have less impact on the filament, resulting in a higher radiation resilience when in LRS [91], [93].…”

Section: Resistive Random Access Memorymentioning

confidence: 99%

See 2 more Smart Citations

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).

show abstract

Section: Resistive Random Access Memorymentioning

confidence: 91%

Section: Resistive Random Access Memorymentioning

confidence: 94%

Section: Resistive Random Access Memorymentioning

confidence: 99%

See 1 more Smart Citation

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…In the case of non-volatile resistive switching in ReRAM thin layers of Cu-doped SiO 2 30 or HfO 2 31 with Cu and Pt or Cu and W electrodes, it was reported that the formation and rupture of CFs are only weakly affected by various doses of 60 Co γ radiation (total dose of 3.6 kGy 31 or 71 kGy 30 ), that is the resistances in the LRS, reset voltages, and the switching endurance exhibited no significant reduction, and the SET-RESET process remained reversible. Only the HRS resistance and the set voltage values showed some relatively small decrease and increase, respectively, after irradiation.…”

Section: Introductionmentioning

confidence: 99%

Gamma radiation-induced nanodefects in diffusive memristors and artificial neurons

Pattnaik,

Andrews,

Cropper

et al. 2023

Nanoscale

View full text Add to dashboard Cite

show abstract

“…The possible threshold switching mechanism is proposed as the formation of unstable or even discontinuous conductive filaments at low compliance currents. More details on resistive switching mechanisms of the SiO 2 -based threshold switching devices can be found in [28,29]. Figure 3(a) illustrates the I D -V GS transfer characteristics of the stand-alone AlGaN/GaN MIS-HEMTs at drain voltages (V DS ) from 3 to 9 V and gate voltages (V GS ) from −14 to 4 V in both linear and logarithmic scales.…”

mentioning

confidence: 99%

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

et al. 2019

View full text Add to dashboard Cite

We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO 2 -based threshold switching devices in series with the source. The SiO 2 -based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 10 5 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10 −5 μA μm −1 ) and a high I ON /I OFF ratio (>10 7 ). Moreover, with the SiO 2 -based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. This steepslope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III-V and are of potential interest for the development of power switching and high frequency devices.Nowadays, the continuance of Moore's law has become quite stringent for semiconductor foundries due to the limits of physics and fabrications [1, 2]. Meanwhile, conventional Si based MOSFETs are facing the fundamental limitation of the subthreshold swing (SS) by Boltzmann's theory [3]. To keep providing faster computing systems for customers in future generation electronics, innovative materials and technologies have been explored extensively. These include III-V compounds [4], two-dimensional (2D) materials [5], topological insulators [6] and neural networks [7].Recently, researchers proposed to employ tunneling FETs and integrate ferroelectric materials on gate of FETs to realize the steep subthreshold switching [8,9]. However, the average SS of these devices was larger than 30 mV/decade, which is still unsatisfying. Another effort includes adopting graphene-based resistive switching device to achieve steep slope (sub-10 mV/decade) and low leakage current [10]. It is claimed that this filament transistor can be scaling down to sub-10 nm without sacrificing performance. Nonetheless, the repeatability and homogeneity still remain a critical challenge for such 2D material-based devices.An alternative approach is to combine phase-change materials with conventional FETs to realize phase-FET or hyper-FET. The metal-insulator-transition (or Mott insulator) Nanotechnology Nanotechnology 30 (2019) 215201 (7pp)

show abstract

A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells

Cited by 24 publications

References 40 publications

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Gamma radiation-induced nanodefects in diffusive memristors and artificial neurons

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Contact Info

Product

Resources

About