A Study of GaAs1–xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

Nalamati, Surya; Sharma, Manish; Deshmukh, Prithviraj; Kronz, Jeffrey; Lavelle, Robert M.; Snyder, David W.; Reynolds, C. L.; Liu, Yang; Iyer, Shanthi

doi:10.1021/acsanm.9b00893

Cited by 22 publications

(22 citation statements)

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“…In this work, we investigate the effect of different GaTe cell temperatures on Te dopant incorporation and electronic properties of MBE grown Te- doped GaAsSb NWs using several surface analytical characterization techniques tools, namely XPS/UPS and SKPM along with C-AFM. The extensive research interest in GaAsSb NWs stems from its narrow band gap region covering the important optical telecommunication wavelengths of 1.3 µm and 1.55 µm 42 . Statistical analyses of all four measurement techniques have provided evidence for confirmation of Te incorporation in these GaAsSb NWs.…”

Section: Introductionmentioning

confidence: 99%

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

Ramaswamy

Devkota

Pokharel

et al. 2021

Sci Rep

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We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), conductive-atomic force microscopy (C-AFM), and scanning Kelvin probe microscopy (SKPM). The NWs were grown using Ga-assisted molecular beam epitaxy with a GaTe captive source as the dopant cell. Te-incorporation in the NWs was associated with a positive shift in the binding energy of the 3d shells of the core constituent elements in doped NWs in the XPS spectra, a lowering of the work function in doped NWs relative to undoped ones from UPS spectra, a significantly higher photoresponse in C-AFM and an increase in surface potential of doped NWs observed in SKPM relative to undoped ones. The carrier concentration of Te-doped GaAsSb NWs determined from UPS spectra are found to be consistent with the values obtained from simulated I–V characteristics. Thus, these surface analytical tools, XPS/UPS and C-AFM/SKPM, that do not require any sample preparation are found to be powerful characterization techniques to analyze the dopant incorporation and carrier density in homogeneously doped NWs.

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Section: Introductionmentioning

confidence: 99%

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

Ramaswamy

Devkota

Pokharel

et al. 2021

Sci Rep

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“…The growth of high‐quality GaAs 1−x Sb x NWs on monolayer graphene by MBE for the application in a flexible near‐infrared photodetector has been reported by Nalamati et al. [ 65 ] The authors systematically investigated the influence of important growth parameters of growth temperature, V/III beam equivalent pressure (BEP) ratio, and Ga shutter opening duration on NWs growth. A schematic illustration of the growth process of GaAsSb NWs is shown in the top panel of Figure 9.…”

Section: Van Der Waals Epitaxy Growth Of Semiconductor Nanowires On Gmentioning

confidence: 99%

“…GaAsSb NWs have also shown high potential for application in flexible near‐infrared photodetector. Nalamati et al [ 65 ] measured the I−V characteristics of a single vertical GaAsSb NW grown on graphene as well as on Si. The MBE grown GaAsSb NWs on graphene which exhibited significantly lower dark current when compared to those grown on Si.…”

Section: Applications Of Van Der Epitaxy Grown Nanowiresmentioning

confidence: 99%

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Anyebe

Kesaria

2020

Nano Select

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The recent discovery of the one‐atom‐thick, two‐dimensional graphene layers with exciting properties including superb optical transparency and high mechanical robustness has stimulated extensive research interest for use as an alternative nanowires (NWs) growth platform for applications in next generation, flexible, stretchable, and printable electronic and optoelectronic devices. When combined with the exceptional capabilities of semiconductor NWs including improved light absorption, reduced optical reflectance, enhanced carrier collection, and fast response, the performance of optoelectronic devices could be significantly improved in novel high‐performance, flexible nanodevices. However, the growth of semiconductor NWs on 2D graphene layers is highly challenging owing to the absence of surface dangling bonds on graphene. Intriguingly, the last decade has witnessed a flurry of research activity on the growth of III‐V semiconductor NWs on graphene. In this review, we highlight the significant advancements that have been made in circumventing this challenge to realize the growth of III‐V semiconductor NWs on graphene. We then summarize the recent progress made in the development of graphene‐based NWs devices including photodetectors and solar cells. Finally, a brief conclusion and outlook of the way forward in the growth of semiconductor NWs on graphene is presented.

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“…(ii) Chemical inert nature of the graphene leads to a low surface energy for graphene . This lack of dangling bonds at the surface results in the formation of a droplet with a large contact angle that is not conducive to vertical NW growth by the commonly used vapor liquid solid growth mechanism …”

Section: Introductionmentioning

confidence: 99%

“…In our previous work, it is found that the two temperature growth steps and the surfactant effect of Sb can be used successfully to grow vertical GaAsSb NWs. However, the NW density was too low for any practical device applications.…”

Section: Introductionmentioning

confidence: 99%

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

Nalamati

Devkota

et al. 2020

ACS Appl. Electron. Mater.

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We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam epitaxy. An O2 plasma treatment of the graphene under mild conditions enabled modification of the surface functionalization and improved reactivity of the graphene surface to semiconductor adatoms. The rise in the disorder peak of the Raman mode, decreased surface conductivity, and creation of additional O2 groups of plasma-treated graphene compared to that of pristine graphene confirmed functionalization of the graphene. To enhance the nucleation centers further for the vertical yield of NWs on the graphene surface, NWs were grown on a higher Sb composition GaAs0.6Sb0.4 stem for surface engineering the graphene surface via the surfactant effect of Sb and for better lattice matching. The NWs grown under optimal conditions exhibited a zinc blende crystal structure with no discernible structural defects. The NWs with a GaAs-passivated shell exhibited photoluminescence emission at 1.35 eV at 4 K and 1.28 eV at room temperature. The ensemble device fabricated with a top segment of GaAsSb NW-doped n-type using a GaTe captive source exhibited an optical responsivity of 110 A/W with a detectivity of 1.1 × 1014 Jones. These results of hybrid GaAsSb NW heterostructure/graphene devices show significant potential toward the fabrication of flexible near-infrared photodetector device applications. Further, the simple and efficient O2 plasma treatment approach for surface engineering of graphene in conjunction with a high Sb compositional stem has shown to be a promising route that can be broadly applicable for the growth of other III–V ternary material systems for improving the vertical yield of NWs.

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A Study of GaAs_1–xSb_x Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

Cited by 22 publications

References 50 publications

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

A study of dopant incorporation in Te-doped GaAsSb nanowires using a combination of XPS/UPS, and C-AFM/SKPM

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

Hybrid GaAsSb/GaAs Heterostructure Core–Shell Nanowire/Graphene and Photodetector Applications

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