A study of fast response characteristics for hydrogen sensing with platinum FET sensor

Tsukada, Keiji; Kiwa, Toshihiko; Yamaguchi, Toshimitsu; Migitaka, Sonoko; Goto, Yasushi; Yokosawa, Kazuhiko

doi:10.1016/j.snb.2005.04.026

Cited by 73 publications

(68 citation statements)

References 15 publications

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“…• C, regardless of whether Ir(EtCp)(COD), Ir(acac) 3 , or (MeCp)Ir(CHD) precursor is used. All Pt-group metals show a similar ability to break C-H bonds of adsorbed species, independent of specific precursor ligands.…”

Section: Discussionmentioning

confidence: 99%

Mass Spectrometry Study of the Temperature Dependence of Pt Film Growth by Atomic Layer Deposition

Erkens

Mackus

Knoops

et al. 2012

ECS J. Solid State Sci. Technol.

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Insights into the temperature dependence of atomic layer deposition (ALD) of Pt using (methylcyclopentadienyl)trimethylplatinum, (MeCp)PtMe 3 , precursor and O 2 are presented, based on a study of reaction products by time-resolved quadrupole mass spectrometry (QMS) measurements. Above 250 • C, Pt ALD proceeds through unhindered O 2 dissociation at the Pt surface, inducing complete and instantaneous combustion of the precursor ligands. Quantification of the QMS data revealed that at 300 • C, approximately 20% of the C-atoms react during the precursor pulse, forming mainly CH 4 (∼18%) balanced by CO 2 (∼2%). The remaining 80% of the C-atoms are combusted during the O 2 pulse. Time-resolved data indicated that the combustion reactions compete with the hydrogenation reactions for the available surface carbon. Combustion reactions were found to be dominant, provided that a sufficient amount of chemisorbed oxygen is available. When the temperature drops below 250 • C, deposition becomes hindered by the presence of a carbonaceous surface layer of partially fragmented and dehydrogenated precursor ligands, formed during the precursor pulse. The carbonaceous layer limits dissociative chemisorption of O 2 and hence combustion reactions (leading to CO 2 ) whereas reduced surface reactivity also limits (de-)hydrogenation reactions (leading to CH 4 ). Below 100 • C, the carbonaceous layer fully prevents O 2 dissociation and ALD of Pt cannot proceed.

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Section: Discussionmentioning

confidence: 99%

Mass Spectrometry Study of the Temperature Dependence of Pt Film Growth by Atomic Layer Deposition

Erkens

Mackus

Knoops

et al. 2012

ECS J. Solid State Sci. Technol.

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“…The hydrogen response mechanism of the conventional Pt-FET hydrogen gas sensor is based on the hydrogen dissociation reaction on the Pt electrode surface. The output voltage V of the Pt-FET sensor is expressed as the following Nernst equation [8] :…”

Section: Resultsmentioning

confidence: 99%

“…The gas sensitive layer was formed using the same procedures as those of the proton pumping gate FET, while the Nafion Meanwhile, DC or AC bias voltage was applied to the upper gate electrode against the lower gate. The response characteristics of the FET sensor were evaluated by the gas flow system fabricated previously [8]. The FET sensor was mounted on a ceramic substrate and the operating temperature was controlled by a heater under the flow cell.…”

Section: Methodsmentioning

confidence: 99%

“…However, their response characteristics deteriorate at a high hydrogen concentration due to the blister formation in the palladium (Pd) used as the gate catalytic metal [7] . To solve this problem, we previously reported details of a platinum (Pt)-gate hydrogen gas sensor (Pt-FET) with stability at high hydrogen concentrations [8] . However, the gas selectivity of this FET sensor is insufficient because the gate catalytic metal of its sensor reacts to interference gases, such as methane, ethane and ammonia, meaning the gas selectivity must be improved [9,10] .…”

Section: Introductionmentioning

confidence: 99%

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Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air

Yamaguchi¹,

Takisawa²,

Kiwa³

et al. 2008

Sensors and Actuators B: Chemical

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Two different types of hydrogen response signals (DC and AC) of a proton pumping gate FET with triple layer gate structure (Pd / proton conducting polymer / Pt) were obtained. The proton pumping gate FET showed good selectivity against other gases (CH 4 , C 2 H 6 , NH 3 , and O 2 ). For practical use, the hydrogen response characteristics of the proton pumping gate FET were investigated in air (a gaseous mixture of oxygen and nitrogen). The proton pumping gate FET showed different hydrogen response characteristics in nitrogen as well as in air, despite the lack of oxygen interference independently. To clarify the response mechanism of the proton pumping gate FET, a hydrogen response measurement was performed, using a gas flow system and electrochemical impedance spectroscopy. Consequently, the difference in response between nitrogen and air was found to be due to the hydrogen dissociation reaction and the interference with the proton transfer caused by the adsorbed oxygen on the upper Pd gate electrode.

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“…Compared with platinum 23 , Pd film is more popular because of its lower cost. Pd alloys with Ag, Au, Ni, and WO 3 have also been studied [24][25][26][27][28][29] because of their improved response time 24,25,27 , sensitivity 28,29 , and durability 26 as a sensing material.…”

Section: Introductionmentioning

confidence: 99%

Realization of palladium-based optomechanical cantilever hydrogen sensor

McKeown

Wang

et al. 2017

Microsyst Nanoeng

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Hydrogen has attracted attention as an alternative fuel source and as an energy storage medium. However, the flammability of hydrogen at low concentrations makes it a safety concern. Thus, gas concentration measurements are a vital safety issue. Here we present the experimental realization of a palladium thin film cantilever optomechanical hydrogen gas sensor. We measured the instantaneous shape of the cantilever to nanometer-level accuracy using diffraction phase microscopy. Thus, we were able to quantify changes in the curvature of the cantilever as a function of hydrogen concentration and observed that the sensor's minimum detection limit was well below the 250 p.p.m. limit of our test equipment. Using the change in curvature versus the hydrogen curve for calibration, we accurately determined the hydrogen concentrations for a random sequence of exposures. In addition, we calculated the change in film stress as a function of hydrogen concentration and observed a greater sensitivity at lower concentrations.Keywords: hydrogen detection; imaging and sensing; interference microscopy; optomechanics; optical sensors; surface dynamics INTRODUCTIONHydrogen has always been viewed as a promising alternative to fossil fuels, and it can also function as an effective energy storage medium for intermittent energy sources. In addition, hydrogen is used in a range of other industries, including chemical production, metal refining, and food processing. A major safety concern with hydrogen is combustibility. Therefore, early leak detection and concentration determination of hydrogen have been areas of intense research 1-3 . There are various types of hydrogen sensors that use a wide range of detection mechanisms. Lundström et al. 4 proposed metal oxide semiconductor (MOS)-type hydrogen sensors 5 . However, MOS sensors suffer from drawbacks such as premature saturation of detectable hydrogen concentrations and low sensitivity. Other MOS-based devices have been used as hydrogen sensors, such as MOS field-effect transistors (FETs) 6,7 , high electron mobility transistors [8][9][10] , and Schottky diode-type FETs 11,12 . However, these devices require complicated fabrication processes and have high production costs. Optical gas sensors 13-21 not only overcome these disadvantages but also have other unique advantages, such as negligible electrical interference, no risk of ignition from an electrical spark, and the ability to work at high temperatures or in harsh environments.Palladium (Pd) can absorb up to 900 times its own weight in hydrogen gas at room temperature 22 . Compared with platinum 23 , Pd film is more popular because of its lower cost. Pd alloys with Ag, Au, Ni, and WO 3 have also been studied 24-29 because of their improved response time 24,25,27 , sensitivity 28,29 , and durability 26 as a sensing material. The alloys can avoid blistering effects 26 and the α to β phase transition at higher hydrogen concentrations 25,27 .

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A study of fast response characteristics for hydrogen sensing with platinum FET sensor

Cited by 73 publications

References 15 publications

Mass Spectrometry Study of the Temperature Dependence of Pt Film Growth by Atomic Layer Deposition

Mass Spectrometry Study of the Temperature Dependence of Pt Film Growth by Atomic Layer Deposition

Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air

Realization of palladium-based optomechanical cantilever hydrogen sensor

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