A study of dislocations in AlN and GaN films grown on sapphire substrates

Bai, J.; Wang, T.; Parbrook, P. J.; Lee, K.B.; Cullis, A. G.

doi:10.1016/j.jcrysgro.2005.05.023

Cited by 77 publications

(51 citation statements)

References 14 publications

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“…These dislocations then propagate upward through the films and reach the surface. As is consistent with previous reports of AlN films, there are very few screw dislocations observed for the thick films described in this letter [16,17].…”

Section: Resultssupporting

confidence: 94%

Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy

Kamber

Haskell

et al. 2006

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 94%

Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy

Kamber

Haskell

et al. 2006

Journal of Crystal Growth

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“…Then, the growth temperature is subsequently raised to more than about 1050°C to grow a thick GaN buffer layer prior to the growth of any device structure. During the subsequent high-temperature (HT) growth, the HT islands are initially expected to be formed, and then laterally coalescence occurs which finally leads to an atomically flat surface [18].…”

Section: Resultsmentioning

confidence: 99%

Structural and optical properties of an InxGa1−xN/GaN nanostructure

et al. 2007

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The structural and optical properties of an In x Ga 1Àx N/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090°C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure.

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“…In addition, the formation of cracks can be suppressed if AlGaN is grown on AlN. It is well known that an AlN layer grown on a sapphire substrate contains high-density dislocations [1]. A low-temperature (LT) buffer layer has a significant effect on the improvement in the quality of GaN for visible light-emitting diodes (LEDs), particularly in the case of metalorganic vapor phase epitaxy (MOVPE) [2].…”

Section: Introductionmentioning

confidence: 99%