We report on the growth of Mg-doped Al x Ga 1-x N alloys and characterization of their optical properties. Under the low Mg concentration in the range 2×1017 to 1×10 18 cm -3 of Al x Ga 1-x N, the activation energy of Mg acceptor became higher and higher with increase in the Al content of Al x Ga 1-x N. The experimental results for activation energies of Mg acceptor fitted quite well with the hydrogen atom like model. By the Haynes' rule, relationship between bound-excition energy and activation energy of Mg acceptor was investigated, which coincided with our experimental results.
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