A structure of CdS/CuxS quantum dots sensitized solar cells

Shen, Ting; Lu, Bian; Li, Bo; Zheng, Kaibo; Pullerits, Tõnu; Tian, Jianjun

doi:10.1063/1.4952435

Cited by 26 publications

(5 citation statements)

References 45 publications

(31 reference statements)

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“…117 The density Unlike the above mentioned wide band gap semiconductor or insulating inorganic materials overcoating strategy aiming at isolating photoanode with electrolyte, and reducing photogenerated electron leakage at the photoanode/electrolyte interface, p-type semiconductor CuS overlayer has been used to facilitate hole transfer to the electrolyte from QD sensitizers. 192,462,478 In an example reported by Ghosh et al, 479 CdS layer was first overcoated around QD sensitized photoanode, and then Cd 2+ was partially replaced by Cu 2+…”

Section: Interface Engineeringmentioning

confidence: 99%

Quantum dot-sensitized solar cells

et al. 2018

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Quantum dot-sensitized solar cells (QDSCs) have emerged as a promising candidate for next-generation solar cells due to the distinct optoelectronic features of quantum dot (QD) light-harvesting materials, such as high light, thermal, and moisture stability, facilely tunable absorption range, high absorption coefficient, multiple exciton generation possibility, and solution processability as well as their facile fabrication and low-cost availability. In recent years, we have witnessed a dramatic boost in the power conversion efficiency (PCE) of QDSCs from 5% to nearly 13%, which is comparable to other kinds of emerging solar cells. Both the exploration of new QD light-harvesting materials and interface engineering have contributed to this fantastically fast improvement. The outstanding development trend of QDSCs indicates their great potential as a promising candidate for next-generation photovoltaic cells. In this review article, we present a comprehensive overview of the development of QDSCs, including: (1) the fundamental principles, (2) a history of the brief evolution of QDSCs, (3) the key materials in QDSCs, (4) recombination control, and (5) stability issues. Finally, some directions that can further promote the development of QDSCs in the future are proposed to help readers grasp the challenges and opportunities for obtaining high-efficiency QDSCs.

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Section: Interface Engineeringmentioning

confidence: 99%

Quantum dot-sensitized solar cells

et al. 2018

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“…Since the surface energy of CuxSe was much lower than that of CdS, CdS was believed to be dissolved by Cu 2+ containing solution [31]. Thus, a compact CuxSe seeds layer was formed on the substrate after the ion exchange process.…”

Section: +mentioning

confidence: 99%

Controlled growth of Cu3Se2 nanosheets array counter electrode for quantum dots sensitized solar cell through ion exchange

et al. 2017

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Copper selenide (CuxSe) has great potential as counter electrode for quantum dots sensitized solar cell (QDSSC) due to its excellent electrocatalytic activity and lower charge transfer resistance. A novel ion exchange method has been utilized to fabricate Cu3Se2 nanosheets array counter electrode. CdS layer was first deposited by sputtering and used as a template to grow compact and uniform Cu3Se2 film in a typical chemical bath. The morphology and thickness of the Cu3Se2 nanosheets were controlled by the deposition time. The final products (2h-Cu3Se2) showed significantly improved electrochemical catalytic activity and carrier transport property, leading to a much increased power conversion efficiency (4.01%) when compared with the CuS counter electrode CdS/CdSe QDSSC (3.21%).

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“…As discussed in the literature, one of the main limiting factors of the performance of QDSSCs is the hole transfer to the redox electrolyte which is orders of magnitude slower than the electron injection to TiO 2 . ,, Previously, an inorganic capping layer has been used to facilitate hole transfer to the electrolyte from the NC valence band (VB). − One of the limitations was the use of NCs grown by a successive ionic layer adsorption and reaction (SILAR) technique which suffers from corrosion of the device and limited control over NC size distribution, resulting in uncontrolled surface passivation and trap state density leading to poor solar cell performance. ,, To the contrary, in the postsynthesis assembly, high-quality presynthesized colloidal NCs with a well-defined size, morphology, and surface properties are deposited on the TiO 2 film. ,,− So far, linker-assisted deposition using short chain thiols as linkers results in the best efficiencies reported for QDSSCs because of controlled opto-electronic properties of the NCs and excellent loading on TiO 2 . ,, Although wide band gap materials have been used as a passivating layer to enhance power conversion efficiency (PCE), the effect of a hole transporting layer (HTL) after linker-assisted deposition of NCs has not been elucidated in detail.…”

Section: Introductionmentioning

confidence: 99%

Boosting the Efficiency of Quantum Dot-Sensitized Solar Cells through Formation of the Cation-Exchanged Hole Transporting Layer

et al. 2017

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In search of a viable way to enhance the power conversion efficiency (PCE) of quantum dot-sensitized solar cells, we have designed a method by introducing a hole transporting layer (HTL) of p-type CuS through partial cation exchange process in a postsynthetic ligand-assisted assembly of nanocrystals (NCs). High-quality CdSe and CdSSe gradient alloy NCs were synthesized through colloidal method, and the charge carrier dynamics was monitored through ultrafast transient absorption measurements. A notable increase in the short-circuit current concomitant with the increase in open-circuit voltage and the fill factor led to 45% increment in PCE for CdSe-based solar cells upon formation of the CuS HTL. Electrochemical impedance spectroscopy further revealed that the CuS layer formation increases recombination resistance at the TiO/NC/electrolyte interface, implying that interfacial recombination gets drastically reduced because of smooth hole transfer to the redox electrolyte. Utilizing the same approach for CdSSe alloy NCs, the highest PCE (4.03%) was obtained upon CuS layer formation compared to 3.26% PCE for the untreated one and 3.61% PCE with the conventional ZnS coating. Therefore, such strategies will help to overcome the kinetic barriers of hole transfer to electrolytes, which is one of the major obstacles of high-performance devices.

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A structure of CdS/CuxS quantum dots sensitized solar cells

Cited by 26 publications

References 45 publications

Quantum dot-sensitized solar cells

Quantum dot-sensitized solar cells

Controlled growth of Cu3Se2 nanosheets array counter electrode for quantum dots sensitized solar cell through ion exchange

Boosting the Efficiency of Quantum Dot-Sensitized Solar Cells through Formation of the Cation-Exchanged Hole Transporting Layer

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