A stackable cross point Phase Change Memory

Kau, D.; Tang, Stephen; Karpov, I. V.; Dodge, Rick; Klehn, B.; Kalb, Johannes; Strand, J.; Diaz, Aleshandre; Leung, Nelson; Wu, J. H. T.; Lee, Sean; Langtry, T. N.; Chang, Kuo‐Wei; Papagianni, C.; Lee, Jinwook; Hirst, Jeremy; Erra, Swetha; Flores, Eddie; Righos, Nick; Castro, H.A.; Spadini, G.

doi:10.1109/iedm.2009.5424263

Cited by 113 publications

(58 citation statements)

References 5 publications

(4 reference statements)

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“…NV-Heaps [Coburn et al 2011] implements a persistent heap in user space and establishes robust protection mechanisms to reduce errors of pointers to volatile regions. Experiments show that, when used to implement the same data structure, NV-Heaps get a 32× higher performance in efficiency than Berkeley DB [Oracle 2010], and 244× that of Stasis [Sears and Brewer 2006]. In order to reduce software overhead, it can only use PCM as storage.…”

Section: Persistent Data Structuresmentioning

confidence: 95%

“…Impressive progress has been made in basic materials, device engineering, and chip-level demonstrations, including the potential for MLC programming and 3D-stacking [Kau et al 2009]. When designing computer architectures and software systems for computer systems incorporating PCM, we can take advantage of PCM's good attributes of byte-addressability, low read latency, no power overhead in an idle period, and nonvolatility, and avoid PCM's disadvantages of high write latency, high-access energy consumption, and limited write lifetime.…”

Section: Pcm Attributesmentioning

confidence: 99%

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Rethinking Computer Architectures and Software Systems for Phase-Change Memory

Zhang

2016

J. Emerg. Technol. Comput. Syst.

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With dramatic growth of data and rapid enhancement of computing powers, data accesses become the bottleneck restricting overall performance of a computer system. Emerging phase-change memory (PCM) is byte-addressable like DRAM, persistent like hard disks and Flash SSD, and about four orders of magnitude faster than hard disks or Flash SSDs for typical file system I/Os. The maturity of PCM from research to production provides a new opportunity for improving the I/O performance of a system. However, PCM also has some weaknesses, for example, long write latency, limited write endurance, and high active energy. Existing processor cache systems, main memory systems, and online storage systems are unable to leverage the advantages of PCM, and/or to mitigate PCM's drawbacks. The reason behind this incompetence is that they are designed and optimized for SRAM, DRAM memory, and hard drives, respectively, instead of PCM memory. There have been some efforts concentrating on rethinking computer architectures and software systems for PCM. This article presents a detailed survey and review of the areas of computer architecture and software systems that are oriented to PCM devices. First, we identify key technical challenges that need to be addressed before this memory technology can be leveraged, in the form of processor cache, main memory, and online storage, to build high-performance computer systems. Second, we examine various designs of computer architectures and software systems that are PCM aware. Finally, we obtain several helpful observations and propose a few suggestions on how to leverage PCM to optimize the performance of a computer system. ACM Reference Format:Chengwen Wu, Guangyan Zhang, and Keqin Li. 2016. Rethinking computer architectures and software systems for phase-change memory.

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Section: Persistent Data Structuresmentioning

confidence: 95%

Section: Pcm Attributesmentioning

confidence: 99%

Rethinking Computer Architectures and Software Systems for Phase-Change Memory

Zhang

2016

J. Emerg. Technol. Comput. Syst.

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“…Impressive progress has been made in basic materials, device engineering and chip level demonstrations including the potential for MLC programming and 3d-stacking [78]. Impressive progress has been made in basic materials, device engineering and chip level demonstrations including the potential for MLC programming and 3d-stacking [78].…”

Section: Discussionmentioning

confidence: 99%

Phase Change Memory: From Devices to Systems

Qureshi

Gurumurthi

Rajendran³

2011

Synthesis Lectures on Computer Architecture

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“…37. Such a cross-point PCRAM device with a multilayered structure has been demonstrated, [220,221] whereas a realistic 3D stacked PCM memory cell is still lacking. Therefore, the ultimate solution to overcome the scaling limits of the PCRAM, either in the 2D or 3D case, is the minimization of the memory selector while simultaneously sustaining the sufficiently high-current density for programming.…”

Section: Other Miscellaneous Pcram Cellsmentioning

confidence: 99%

“…Therefore, the ultimate solution to overcome the scaling limits of the PCRAM, either in the 2D or 3D case, is the minimization of the memory selector while simultaneously sustaining the sufficiently high-current density for programming. Several alternative memory selectors to MOSFET such as bipolar transistors, [220] PN junction diodes, [220] Schottky diodes, [222] metal-insulator-transition, [223] and ovonic threshold switch (OTS), [221] have generated considerable research interest. However, none of the current candidates can completely fulfill the requirements of the so-called "perfect" selector that has high on-state conductivity, infinite off-state resistance, and a small layout area, [163] which has led to the exploration for more innovative memory selectors.…”

Section: Other Miscellaneous Pcram Cellsmentioning

confidence: 99%

Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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A stackable cross point Phase Change Memory

Cited by 113 publications

References 5 publications

Rethinking Computer Architectures and Software Systems for Phase-Change Memory

Rethinking Computer Architectures and Software Systems for Phase-Change Memory

Phase Change Memory: From Devices to Systems

Physical principles and current status of emerging non-volatile solid state memories

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