2020 8th International Electrical Engineering Congress (iEECON) 2020
DOI: 10.1109/ieecon48109.2020.229575
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A Source Pocket Doping in PNPN-DG TFET to Preclude Ambipolar Current – Two Dimensional Simulation

Bijoy Goswami
1
,
Lavlesh Kumar Barman
2
,
Anirban Jana
3
et al.
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