A source of broad electron beams with a self-heated hollow cathode for plasma nitriding of stainless steel

Гаврилов, Н. В.; Men’shakov, A. I.

doi:10.1134/s0020441211050046

Cited by 21 publications

(5 citation statements)

References 14 publications

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“…In this work balanced magnetrons with Ti and graphite targets 80 mm in diameter installed in a vacuum chamber 300 mm in diameter and 200 mm in height were used. At the top of the vac uum chamber a source of wide electron beams with a self glowing hollow cathode was installed, the princi ple of operation and characteristics of the cathode are described in [15]. An electrically isolated holder of samples is located inside the vacuum chamber; the temperature of the sample was measured using a ther mocouple.…”

Section: Methodsmentioning

confidence: 99%

Comparison of the hardness of TiC/a-C coatings obtained by the method of the magnetron sputtering of a graphite target with high- and low-power pulses

Mamaev

Kaygorodov

2014

J. Synch. Investig.

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TiC/a C coatings 0.1-2.0 µm thick are deposited onto substrates made of (WC + Ti) hard alloy or stainless steel by the method of the pulsed magnetron sputtering of Ti and graphite targets. The microhard ness of coatings obtained by the sputtering of a graphite target by pulses of high (~1 kW/cm 2 ) and low power (~25 W/cm 2 ) is compared. The effect of the coating thickness on the measured value of the microhardness is investigated. It is shown that maximum values of coating hardness (35 ± 5 GPa) are attained at a Ti/C ratio of 0.6-0.9.

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Section: Methodsmentioning

confidence: 99%

Comparison of the hardness of TiC/a-C coatings obtained by the method of the magnetron sputtering of a graphite target with high- and low-power pulses

Mamaev

Kaygorodov

2014

J. Synch. Investig.

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“…This approach was realized in an electrode system with a two-stage source of a wide (~100 cm 2 ) low-energy electron beam based on a self-heating hollow cathode discharge (SHHC), the design of which was described in detail in [5] ( Figure 1). The beam current I b was varied up to 5 A by changing the discharge current in the first stage, electron beam energy varied in the range 50−500 eV.…”

Section: Abstract Sicn Coating; Polymer Derived Ceramic; Low-energy Ementioning

confidence: 99%

Investigation of a New Method of the Organosilicon Compounds Activation by a Low-energy Electron Beam for SiCN-coatings Deposition

Men’shakov

Cholakh

2020

e-J. Surf. Sci. Nanotechnol.

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The article describes a new method of organosilicon compounds activation by low energy electron beam for SiCN coatings deposition. The composition of the beam plasma in a hexamethyldisilazane-containing gas medium was studied, and it was shown that the precursor molecules decomposition degree increases with the beam current and nonmonotonically depends on the electron beam energy. The application of a low-energy electron beam for the plasma-chemical vapor decomposition of hexamethyldisilazane and for samples heating up by electron beam to 600°C makes it possible to obtain SiCN-based coatings with a hardness up to 18 GPa and thickness ~1 μm for 1 h.One of the ecological, effective and productive modern methods for silicon carbonitride (SiCN) coatings production is a chemical vapor deposition in organosilicon compounds (OSC) vapors medium by its decomposition in plasma (PECVD) [1]. The main factor determining the unique characteristics of SiCN-coatings (such as high hardness, oxidation resistance, chemical inertness, etc.) are the conditions of its synthesis, so the possibility of a controlled change of various processing parameters is crucial for coatings with desired properties obtaining. Usually a radio frequency discharge is used for plasma activation of the precursor vapors [2]. It is important to control the precursor molecules decomposition degree in order to facilitate the formation of films containing both Si−C and Si−N bonds and, as a result, having high mechanical characteristics. However, when using gas discharges, in fact, the only controlled parameter is the discharge current (or power). An alternative way to generate plasma is to use low-energy electron beams [3]. The advantage of this method is that in the range of electron energies 100−200 eV, which is close to the maximum of electron impact ionization cross section of gas molecules and atoms, the frequency of plasma processes increases, resulting in the formation of ionized and excited particles. In addition, an important advantage of the sources used [4] is the independent control of the emission current and electron energy, pressure and gas medium composition over a wide range, which provides flexible control of the plasma parameters. This method was not previously used for the OSC decomposition.This approach was realized in an electrode system with a two-stage source of a wide (~100 cm 2 ) low-energy electron beam based on a self-heating hollow cathode discharge (SHHC), the design of which was described in detail in [5] (Figure 1). The beam current I b was varied up to 5 A by changing the discharge current in the first stage, electron beam energy varied in the range 50−500 eV. Hexamethyldisilazane [(CH 3 ) 3 Si] 2 NH (hereinafter HMDS) was taken as an OSC precursor. The precursor vapor flow was 2 g h −1 . Argon was used as the plasma-forming gas, which flow was kept constant (40 sccm), the pressure in the chamber was 0.2−0.3 Pa.The OSC molecules decomposition process is determined both by the binding energies between the atoms in the initial mo...

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“…Both electron and ion source variants of the hollow cathode have been used for etching [237,246,247], nitriding [220][221][222][223], surface cleaning [177,248] and modification [249][250][251] [156,256,257] about the use of holes in a magnetron sputtering target, or the use of a cylindrical extension surrounding the target, that act as a hollow cathode. In the first case, the idea is that a hollow cathode discharge can be established in the holes and supply electrons and thus enhance the magnetron discharge and therefore the sputtering rate [156,256,258].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

“…Hollow cathodes are used in a wide variety of applications: as efficient light sources [23], as sources of electrons [207][208][209][210][211][212][213] to generate excited species for elemental analysis [1,152,183,214], as ion sources [3,199,[215][216][217][218][219], for nitriding [220][221][222][223], space propulsion [224][225][226], vacuum welding [227], basic plasma research [228,229], cluster formation [230] and plasma-activated pre-treatment and coating processes [231][232][233] among others.…”

Section: Use Of Hollow Cathodes In the Synthesis Of Thin Filmsmentioning

confidence: 99%

The use of hollow cathodes in deposition processes: A critical review

2015

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A source of broad electron beams with a self-heated hollow cathode for plasma nitriding of stainless steel

Cited by 21 publications

References 14 publications

Comparison of the hardness of TiC/a-C coatings obtained by the method of the magnetron sputtering of a graphite target with high- and low-power pulses

Comparison of the hardness of TiC/a-C coatings obtained by the method of the magnetron sputtering of a graphite target with high- and low-power pulses

Investigation of a New Method of the Organosilicon Compounds Activation by a Low-energy Electron Beam for SiCN-coatings Deposition

The use of hollow cathodes in deposition processes: A critical review

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