A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector

Debnath, Ratan; Xie, Ting; Wen, Baomei; Li, Wei; Ha, Ji Yong; Sullivan, Nichole; Nguyen, Nhan V.; Motayed, Abhishek

doi:10.1039/c4ra14567d

Cited by 54 publications

(26 citation statements)

References 48 publications

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“…Among the variety of p-type materials that have been employed to form p-n junction with ZnO, p-NiO stands out due to its band alignment with ZnO and its alloys in UV PD applications. 15, 17, 18 Although excellent figures of merits have been achieved in NiO/ZnO PDs, most of the devices have been fabricated on rigid substrates using high processing temperature without any self-powered behavior 16, 17 which can limit their application on plastic substrates. On the other hand, some devices have shown very slow temporal response 18 that may not be suitable for high-speed device applications.…”

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confidence: 99%

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

et al. 2015

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A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique on indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias of 1.2 V. The engineered ultrathin Ti/Au top metal contacts and UV transparent PET/ITO substrates allowed the PDs to be illuminated through either front or back side. Morphology, structural, chemical and optical properties of sputtered NiO and ZnO films were also investigated.

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confidence: 99%

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

et al. 2015

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“…Besides these significant developments, solution‐processed diodes based on chalcogenides . for photodetectors and all‐oxide diodes for solar cells and photodetector . applications have also been reported by various research groups.…”

Section: Beyond Single Fetsmentioning

confidence: 99%

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

et al. 2018

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Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.

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“…There have already been a number of papers concerning the marrying of n-type ZnO with p-type NiO, particularly for LED [15,16] and photodetector [17,18] applications. Recently, it has been suggested that the adoption of such junctions might be extended to other third generation transparent electronics applications [19,20].…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD

Sandana¹,

Rogers²,

Téherani³

et al. 2015

Oxide-Based Materials and Devices VI

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NiO/ZnO heterostructures were fabricated on FTO/glass and bulk hydrothermal ZnO substrates by pulsed laser deposition. X-Ray diffraction and Room Temperature (RT) Raman studies were consistent with the formation of (0002) oriented wurtzite ZnO and (111) oriented fcc NiO. RT optical transmission studies revealed bandgap energy values of ~3.70 eV and ~3.30 eV for NiO and ZnO, respectively and more than 80% transmission for the whole ZnO/NiO/FTO/glass stack over the majority of the visible spectrum. Lateral p-n heterojunction mesas (~6mm x 6mm) were fabricated using a shadow mask during PLD growth. n-n and p-p measurements showed that Ti/Au contacting gave an Ohmic reponse for the NiO, ZnO and FTO. Both heterojunctions had rectifying I/V characteristics. The junction on FTO/glass gave forward bias currents (243mA at +10V) that were over 5 orders of magnitude higher than those for the junction formed on bulk ZnO. At ~ 10 -7 A (for 10V of reverse bias) the heterojunction leakage current was approximately two orders of magnitude lower on the bulk ZnO substrate than on FTO. Overall, the lateral p-NiO/nZnO/FTO/glass device proved far superior to that formed by growing p-NiO directly on the bulk n-ZnO substrate and gave a combination of electrical performance and visible wavelength transparency that could predispose it for use in various third generation transparent electronics applications.

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A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector

Abstract: Solution-processed high-efficiency p–n heterojunction photodetectors have been developed using transition metal oxides.

Cited by 54 publications

References 48 publications

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD

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