A software platform for ISFET simulation based on open source tools to fit model parameters

Zorrilla, Luighi A. Viton; Lezama, Jinmi

doi:10.1109/intercon.2019.8853824

Cited by 2 publications

(3 citation statements)

References 4 publications

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“…Zorrilla et al have built a software platform for ISFET simulations using open source tools, [527] used as simulation engines with three SPICEbased simulators being considered: NGSpice R , PSpice R , and LTSpice R . [527] A tool was built using python language to do the complete device simulation for a set of parameters. The tool allows adaptation of mathematical model to experimental data.…”

Section: Spice Macromodelmentioning

confidence: 99%

“…[526] They further implemented the developed model in VHDL-AMS language for system-level sim-ulations, which allows single-environment multidomainmixed mode simulations consisting of ISFET sensor and data-processing unit, which reduces the design cost and simulation time. Zorrilla et al have built a software platform for ISFET simulations using open source tools, [527] used as simulation engines with three SPICEbased simulators being considered: NGSpice R , PSpice R , and LTSpice R . [527] A tool was built using python language to do the complete device simulation for a set of parameters.…”

Section: Spice Macromodelmentioning

confidence: 99%

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A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization.

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Section: Spice Macromodelmentioning

confidence: 99%

Section: Spice Macromodelmentioning

confidence: 99%

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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“…ISFET spice model has been widely studied [9], [11][12][13][14][15][16][17], but there is still a lack of discussion on the EGFET SPICE model. So, this paper aims to study the equivalent circuit of the electrochemical method with EGFET structure setup simulated using LTSPICE XVII.…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

Hashim¹,

Zulkifli²,

Herman³

2021

Preprint

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A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.

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A software platform for ISFET simulation based on open source tools to fit model parameters

Cited by 2 publications

References 4 publications

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

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