A soft chemistry-based route to enhanced photoluminescence of terbium ions and tin oxide nanocrystals codoped silica thin films

Zhang, Xiaowei; Chen, Ruowang; Wang, Pengjun; Shu, Junpeng; Zhang, Huihong; Song, Hucheng; Xu, Jun; Pei, Zingway

doi:10.1016/j.apsusc.2018.05.002

Cited by 14 publications

(9 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increase in lifetime at 1532 nm by doping with alkaline earth metal ions is probably due to the decrease in the probability of non-radiative transition of Er 3+ ions and the enhancement in (CR1) and (CR2) processes, which contributes to an enhancement in luminescence. 19,39,40…”

Section: Resultsmentioning

confidence: 99%

Alkaline earth metal ion doping to enhance the light emission from Er³⁺:SnO₂ nanocrystal Co-doped silica films

Qu¹,

Zhang²,

Wang³

et al. 2023

Phys. Chem. Chem. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Resultsmentioning

confidence: 99%

Alkaline earth metal ion doping to enhance the light emission from Er³⁺:SnO₂ nanocrystal Co-doped silica films

Qu¹,

Zhang²,

Wang³

et al. 2023

Phys. Chem. Chem. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Note that k = k r + k nr , in which k r represents radiative recombination rate and k nr represents nonradiative recombination rate. It is expected that k nr increases when the temperature rises, and dominates k at room temperature, as it always relates to energy exchange processes with heat [ 35 ]. So, the k results at high temperature side in Fig.…”

Section: Resultsmentioning

confidence: 99%

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

et al. 2018

View full text Add to dashboard Cite

This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN layer for investigating the strain-controlled recombination mechanism in the system. PL results turned out that tensile stress released samples had better PL performances as their external quantum efficiencies increased to 17%, 7 times larger than the one of regular sample. Detail analysis confirmed they had smaller nonradiative recombination rates ((2.5~2.8)×10−2 s−1 compared to (3.6~4.7)× 10−2 s−1), which was associated with the better crystalline quality and absence of dislocations or cracks. Furthermore, their radiative recombination rates were found more stable and were much higher ((5.7~5.8) ×10−3 s−1 compared to [9~7] ×10−4 s−1) at room temperature. This was ascribed to the suppression of shallow localized states on MQW interfaces, leaving the deep radiative localization centers inside InGaN layers dominating the radiative recombination.

show abstract

“…Simultaneously, one can see an increase in the intensity in the spectral range of 1.8-2.9 eV. Most probably, the weak and broad band in this spectral range originates from defects in both SnO 2 (Sn and O interstitials, dangling bonds, or oxygen vacancies) [5,9,24,25,27,31] and SiO 2 matrix [24,30,32,33] and also from the formation of the SnO x phase [34]. It is noncontradictory, and the contribution of defects in the SiO 2 matrix and SnO x phase in emission would be higher from the more deep layers due to lower concentration of Sn atoms and oxygen atoms diffused from air.…”

Section: Journal Of Nanomaterialsmentioning

confidence: 88%

“…At present, adding optical functionality to a silicon microelectronic chip is one of the most challenging problems of materials research. Thereby, considerable efforts have been focused on the enhancement of UV and visible emission from silica to create an active lightemitting element in next-generation miniature optoelectronic devices [1][2][3][4][5][6][7][8][9][10][11][12]. In spite of typical optoelectronic's operation in IR range, the creation of such silica-based emitters operating in both the visible and UV-violet spectral ranges is a perspective for creating a microminiature MOS light-emitting diode (LED), Bragg reflectors, waveguide lasers, and optocouplers as well as optical switchers in color microdisplay devices.…”

Section: Introductionmentioning

confidence: 99%

Structural Evolution and Photoluminescence of SiO₂ Layers with Sn Nanoclusters Formed by Ion Implantation

Romanov

Komarov

Milchanin

et al. 2019

Journal of Nanomaterials

View full text Add to dashboard Cite

Samples of SiO2 (600 nm)/Si have been implanted with Sn ions (200 keV, 5×1016 cm−2 and 1×1017 cm−2) at room temperature and afterwards annealed at 800 and 900°C for 60 minutes in ambient air. The structural and light emission properties of “SiO2+Sn-based nanocluster” composites have been studied using Rutherford backscattering spectroscopy, transmission electron microscopy in cross section and plan-view geometry, electron microdiffraction, and photoluminescence (PL). A strict correspondence of Sn concentration profiles and depth particle distributions has been found. In the case of 1×1017 cm−2 fluence, the impurity accumulation in the subsurface zone during the thermal treatment leads to swelling and to the formation of dendrites composed of large and coalesced nanoparticles of grey contrast. The appearance of dendrites is most probably due to the SnO2 phase formation. The as-implanted samples are characterized by a weak emission with maximum at the blue range (2.9 eV). The PL intensity increases by an order of magnitude after annealing in an oxidizing atmosphere. The narrowest and most intense PL band has maximum at 3.1 eV. Its intensity increases with increasing fluence and annealing temperature. This emission can be attributed to the formation of the SnO2 phase (in the form of separate clusters or shells of Sn clusters) in the subsurface region of the SiO2 matrix.

show abstract

A soft chemistry-based route to enhanced photoluminescence of terbium ions and tin oxide nanocrystals codoped silica thin films

Cited by 14 publications

References 33 publications

Alkaline earth metal ion doping to enhance the light emission from Er³⁺:SnO₂ nanocrystal Co-doped silica films

Alkaline earth metal ion doping to enhance the light emission from Er³⁺:SnO₂ nanocrystal Co-doped silica films

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

Structural Evolution and Photoluminescence of SiO₂ Layers with Sn Nanoclusters Formed by Ion Implantation

Contact Info

Product

Resources

About

A soft chemistry-based route to enhanced photoluminescence of terbium ions and tin oxide nanocrystals codoped silica thin films

Cited by 14 publications

References 33 publications

Alkaline earth metal ion doping to enhance the light emission from Er3+:SnO2 nanocrystal Co-doped silica films

Alkaline earth metal ion doping to enhance the light emission from Er3+:SnO2 nanocrystal Co-doped silica films

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

Structural Evolution and Photoluminescence of SiO2 Layers with Sn Nanoclusters Formed by Ion Implantation

Contact Info

Product

Resources

About

Alkaline earth metal ion doping to enhance the light emission from Er³⁺:SnO₂ nanocrystal Co-doped silica films

Alkaline earth metal ion doping to enhance the light emission from Er³⁺:SnO₂ nanocrystal Co-doped silica films

Structural Evolution and Photoluminescence of SiO₂ Layers with Sn Nanoclusters Formed by Ion Implantation