A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCN applications

Muller, J.-E.; Baureis, P.; Berger, O.; Boettner, T.; Bovolon, N.; Schultheis, R.; Packeiser, G.; Zwicknagl, P.

doi:10.1109/4.711324

Cited by 15 publications

(3 citation statements)

References 14 publications

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“…H ETEROJUNCTION bipolar transistors (HBTs) attract much industrial interest because of their capability to operate at high current densities [1], [2]. AlGaAs/GaAs or InGaP/GaAs-based devices are promising candidates for power applications in modern mobile telecommunication systems.…”

Section: Introductionmentioning

confidence: 99%

Simulation of power heterojunction bipolar transistors on gallium arsenide

Palankovski

Schultheis

Selberherr

2001

IEEE Trans. Electron Devices

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We demonstrate the results of two-dimensional (2-D) hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are given. We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed as functions of the lattice temperature and, in the case of semiconductor alloys, of the material composition.

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Section: Introductionmentioning

confidence: 99%

Simulation of power heterojunction bipolar transistors on gallium arsenide

Palankovski

Schultheis

Selberherr

2001

IEEE Trans. Electron Devices

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“…The III-V HBTs are considered essential for high-power amplifiers at 3 V power supply, as they offer high current amplification and power-added efficiency (PAE) at 0.9/1.8 GHz [31]. A small chip-size 2 W MMIC based on AlGaAs/GaAs HBTs with excellent performance for wireless applications (62% PAE at 1.8 GHz) was demonstrated in [32]. Fig.…”

Section: Selected Results Of Industrially Relevant Devicesmentioning

confidence: 99%

Industrial application of heterostructure device simulation

Palankovski

Quay

Selberherr

2001

IEEE J. Solid-State Circuits

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We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMOS-NT are presented in good agreement with measured data. The simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation

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“…Under these conditions, the transistor is referred to operate in Class AB mode. Class AB amplifiers have been widely used in RF applications [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Bias boosting technique for a 1.9GHz class AB RF amplifier

Sowlati

Luo

2000

Proceedings of the 2000 International Symposium on Low Power Electronics and Design - ISLPED '00

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A bias boosting technique for a 3.2V, 1.9GHz Class AB RF amplifier designed in a 30GHz BiCMOS process is presented in this paper. In a Class AB amplifier, the average current drawn from the supply depends on the input signal level. As the output power increases so does the average currents in both the emitter and the base of the power transistor. The increased average current causes an increased voltage drop in the biasing circuitry and the ballast resistor. This reduces the conduction angle in the amplifier, pushing it deep into Class B and even Class C operation, reducing the maximum output power by 25%. To avoid the power reduction, the amplifier should have a larger bias which inevitably has a larger power dissipation at low output power levels. The proposed bias boosting circuitry dynamically increases the bias of the power transistor as the output power increases. The amplifier has less power dissipation at low power levels with an increased maximum output power.

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A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCN applications

Cited by 15 publications

References 14 publications

Simulation of power heterojunction bipolar transistors on gallium arsenide

Simulation of power heterojunction bipolar transistors on gallium arsenide

Industrial application of heterostructure device simulation

Bias boosting technique for a 1.9GHz class AB RF amplifier

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