A single-pole double-throw (spdt) circuit using deep etching lateral metal-contact switches

Tang, Min; Palei, W.; Goh, Wang Ling; Agarwal, Ajay; Law, Lok-yin (Login); Liu, A.Q.

doi:10.1109/mwsym.2004.1336048

Cited by 8 publications

(6 citation statements)

References 10 publications

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“…The main drawbacks of vertical switches are relatively complicated fabrication process and stiction problems during the release of the movable structures. Lateral motion switches have also been studied [5][6][7][8][9][10][11][12]. In contrast to vertical switches, lateral switches have the benefit of co-fabrication.…”

Section: Introductionmentioning

confidence: 99%

“…None of these lateral switches exhibited acceptable RF performance at microwave frequencies due to the difficulties of integrating RF design and mechanical design. A study of a lateral switch with coplanar waveguide (CPW) configuration has been reported in earlier work [11,12], which shows an insertion loss of below 1 dB and an isolation of above 16 dB in the frequency range of 400 MHz to 20 GHz.…”

Section: Introductionmentioning

confidence: 99%

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Low-loss lateral micromachined switches for high frequency applications

Liu

Tang

Agarwal

et al. 2004

J. Micromech. Microeng.

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Two novel lateral metal-contact radio-frequency microelectromechanical system (RF MEMS) switches are reported. These switches are implemented with quasi-finite ground coplanar waveguide (FGCPW) configuration and actuated by applying electrostatic force on a high-aspect-ratio cantilever beam. It is demonstrated that the insertion loss of the switch is less than 0.2 dB up to 15 GHz and the isolation is higher than 20 dB up to 25 GHz. An RF model of the switches is used to analyse the effects of the switch design parameters and RF performance. The optimization of the switch mechanical design is discussed where the threshold voltage can be lower than 25 V. The lateral switches are fabricated by deep reactive ion etching (DRIE) process on a silicon-on-insulator (SOI) wafer with shadow mask technology.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-loss lateral micromachined switches for high frequency applications

Liu

Tang

Agarwal

et al. 2004

J. Micromech. Microeng.

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“…The single-pole double-throw (SPDT) switches have been broadly employed in the microwave and millimeter wave communication systems [15], such as the signal routing in transmit and receive applications, the switched-line phase shifters, phased array antennas and the wide-band tuning networks. Many SPDT switches were implemented using MEMS technology for replacing the conventional solid state semiconductor switches.…”

Section: Spdt Mems Switchmentioning

confidence: 99%

Design and Simulation of RF MEMS Capacitive type Shunt Switch & its Major Applications

Verma¹

2013

IOSR-JECE

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This article details about the design of a K-band RF-MEMS capacitive type shunt switch and some of its major applications. The electrostatic and electromagnetic analyses of the designed structure have been performed using MATLAB and commercially available EM solvers. FEM and MOM both tools have been used extensively for full-wave analysis. Two major applications (SPDT switch and reconfigurable Antenna) have been studied here. The design is based upon 675 µm thick high resistive Silicon (ρ > 8KΩ-cm).

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“…Additionally, the deformation of the structures due to fabrication-related stress gradients is difficult to control, which causes the disparity in the performance of the thin-film switches and the degradation of the fabrication yield [3][4][5][6]. Single-crystal silicon (SCS) has been used as the moving structure in some MEMS switches [7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Since SCS has nearly no biaxial stress and vertical stress gradient, and has superior thermal characteristics, the deformation of the SCS moving structures can be reduced and the reliability of the switch can be improved.…”

Section: Introductionmentioning

confidence: 99%

“…Compared to thermally actuated switches, electrostatically actuated switches are more favorable for RF systems due to their lower actuation power consumption and faster switching speed. An electrostatically actuated switch fabricated using a silicon-on-insulator (SOI) wafer with an insertion loss of 1 dB and an isolation of 22 dB up to 25 GHz and a SPDT switching circuit with an insertion loss of 1 dB and an isolation of 20 dB up to 6 GHz have also been demonstrated in our previous work [19,20].…”

Section: Introductionmentioning

confidence: 99%

A silicon-on-glass single-pole-double- throw (SPDT) switching circuit integrated with a silicon-core metal-coated transmission line

Tang

Liu

Oberhammer

2008

J. Micromech. Microeng.

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This paper presents a novel low-loss single-pole-double-throw (SPDT) switching circuit which integrates a silicon-core metal-coated coplanar waveguide (CPW) and two laterally moving switches in parallel. The circuit structure consists of single-crystal silicon as the core material and a thin layer of metal coated on the core surface to propagate the RF signal. The influences of the material property and the process variation on the RF performance of the silicon-core metal-coated CPW is analyzed in detail, including the silicon-core resistivity, the spreading metal on the substrate and the recess etching depth. Based on this analysis, the low-loss SPDT switching circuit is designed and fabricated using high-resistivity silicon (HRSi) as the core material and Pyrex 7740 glass as the substrate. The pull-in voltage of the laterally moving switch is 12.35 V. The insertion loss of the laterally moving switch is less than 1 dB up to 40 GHz. Both the return loss and the isolation are higher than 22 dB up to 40 GHz. The SPDT switching circuit has an insertion loss of less than 1 dB up to 22 GHz. The return loss is 17 dB and the isolation is 25 dB at 25 GHz. A silicon-on-glass (SOG)-based substrate-transfer micromachining process is developed for the SPDT switching circuit fabrication, which has the advantages of single mask, high design flexibility and low signal propagation losses.

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A single-pole double-throw (spdt) circuit using deep etching lateral metal-contact switches

Cited by 8 publications

References 10 publications

Low-loss lateral micromachined switches for high frequency applications

Low-loss lateral micromachined switches for high frequency applications

Design and Simulation of RF MEMS Capacitive type Shunt Switch & its Major Applications

A silicon-on-glass single-pole-double- throw (SPDT) switching circuit integrated with a silicon-core metal-coated transmission line

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