A Simplified High-Speed Bipolar Process with Ti Salicide
Metallization: Implementation of in situ p-doped
polysilicon emitter

Kaplan, Wlodek; Pejnefors, J.; Linder, M.; Sanden, M.; Karlin, Tord; Malm, Gunnar; Zhang, Shili; Grahn, Jan; Östling, Mikael

doi:10.1238/physica.topical.079a00318

Cited by 5 publications

(4 citation statements)

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“…The extracted base and emitter resistances were found to be in good agreement with those derived from HF -parameter measurements [20], as seen in Table II. Measurements on transistors with various emitter areas showed that the extracted was linearly dependent on the reciprocal emitter area; see Fig.…”

Section: Resultssupporting

confidence: 75%

“…The proposed method was also successfully applied to an in-house 2 5 m emitter double polysilicon bipolar transistor [20]. The extracted base and emitter resistances were found to be in good agreement with those derived from HF -parameter measurements [20], as seen in Table II.…”

Section: Resultssupporting

confidence: 59%

“…7. The relatively high value of the intercept on the axis, which corresponds to the sum of the contact resistances of the probe and the resistance through the pad, is due to the lack of a full metallization scheme in the process [20]. The introduction of a second base contact allows for a simple separation of and To show this, we extracted and using measurement data obtained with external resistors of 10, 20, or 47 connected in series with the emitter and 500, 600, or 1000 in series with the base.…”

Section: Resultsmentioning

confidence: 99%

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Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

Linder

Ingvarson

Jeppson

et al. 2000

IEEE Trans. Semicond. Manufact.

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A new procedure for extracting the emitter and base series resistances of bipolar junction transistors is presented. The parameters are extracted from a single measurement in the forward active region on one transistor test structure with two separate base contacts, making it a simple and attractive tool for bipolar transistor characterization. The procedure comprises two methods for extracting the emitter resistance and two for extracting the base resistance. The choice of method is governed by the amount of current crowding or conductivity modulation present in the intrinsic base region. The new extraction procedure was successfully applied to transistors fabricated in an in-house double polysilicon bipolar transistor process and a commercial 0.8-m single polysilicon BiCMOS process. We found that the simulated and measured Gummel characteristics are in excellent agreement and the extracted series resistances agree well with those obtained by means of HF measurements.By adding external resistors to the emitter and base and then extracting the series resistances, we verified that the two base contact test structure offers a simple means of separating the influence of emitter and base series resistances on the transistor characteristics.

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Section: Resultssupporting

confidence: 75%

Section: Resultssupporting

confidence: 59%

Section: Resultsmentioning

confidence: 99%

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Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

Linder

Ingvarson

Jeppson

et al. 2000

IEEE Trans. Semicond. Manufact.

Self Cite

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show abstract

“…However, the extracted model parameters do not predict the frequency dependence and often require separate test structures. A further disadvantage in using a test structure instead of performing measurements on a transistor, is that The devices were fabricated in a simplified double polysilicon self-aligned BJT process [9]. One of the major simplifications was the use of a self-aligned TiSiz for the final metallization.…”

Section: Introductionmentioning

confidence: 99%

A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors

Sanden

Zhang²,

Grahn³

et al.

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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Direct extraction of ten core SPICE model parameters for double polysilicon bipolar junction transistors (BJT's) was performed using a new test structure. The test structure was basically identical to a real BJT, but without the intrinsic base. Hence, the extrinsic parasitics of the test structure were identical to the BJT. From the test structure small-signal model, all extrinsic model parameters were directly extracted from the measured scattering-parameters over the frequency range of 1 to 18 GHz. The values of the extracted parameters were in good agreement compared to those obtained using other conventional methods.modifications to the fabrication process are often needed [7]. Usually, there are variations and non-uniformities among individual devices. Since the average device characteristic across the wafer is of prime interest, measuring on a test structure located adjacent to the transistor can be a good alternative.In this paper a new test structure for direct extraction of ten core SPICE model parameters for double polysilicon bipolar junction transistors (BJT's) is presented. The test structure proposed is identical to the BJT, but without the intrinsic base. All other parasitics are however identical to those in the BJT. 0-7803-5270-X/99/$10.00 0 1999 IEEE 99CH36307

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Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

Sanden

Malm

Grahn

et al. 2000

Microelectronics Reliability

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A Simplified High-Speed Bipolar Process with Ti Salicide Metallization: Implementation of in situ p-doped polysilicon emitter

Cited by 5 publications

References 0 publications

Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

Extraction of emitter and base series resistances of bipolar transistors from a single DC measurement

A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors

Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

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