A simple model of inter-metallic connections (vias) in CMOS resonant rotary traveling wave oscillator (RTWO)

Sanabria, Carlos; Gonzalez, Rogelio M. Higuera; Aranda, Mónico Linares

doi:10.1109/iceee.2017.8108860

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…The use of transmission-lines in the microwave domain for planar circuits can be terminated by open-circuit [40], short-circuit, or mixing configurations [41,42]. A metallic via (M-via) through one or several substrates [43] that can be crossed (through), blind (hidden) or buried [44] as well-described in [43][44][45] is often used to connect two different transmission lines or any other structures. In the case of a transmission-line and the ground (GND), this connection represents a short circuit [45].…”

Section: Introductionmentioning

confidence: 99%

Tri-Band Bandpass Filter Using Mixed Short/Open Circuited Stubs and Q-Factor With Controllable Bandwidth for Was, Ism, and 5g Applications

Massamba¹,

Mpele²,

Mbango³

2022

PIER C

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Designing a multi-band bandpass filter (BPF) with controllable bandwidths is an alternative process to several technologies suggested by researchers. Hence, this paper presents a tri-band BPF in microstrip technology where T-shaped short-and-open stubs have alternating positions to use the maximally flat theory, based on the overall ABCD parameters of the circuit. The combination of the design Q-factor and operating frequency to mismatch the design is the technique basis. The proposed structure comprises quarter wavelength (λ/4) line section to develop a tri-band BPF frequency. All stubs are symmetrical relative to the center axis, while the prototype has been fabricated on a wafer of 22.42 × 7.62 mm 2 . Using an FR4 HTG-175 with a thickness 1-mm, dielectric constant ε r = 4.4, and loss tangent tan δ = 0.02, the (4.06-4.283) GHz, (5.877-6.408) GHz,) GHz are obtained referring to a 10-dB of the return loss. In contrast, the insertion losses at the center frequencies are 2.107/1.354/4.08 dB and the fractional bandwidths of 2.134%, 5.346%, and 8.645%, respectively. This covers WAS (including RLAN), ISM, and 5G applications. However, the attenuation coefficient is between 1.326 dB and 4.368 dB. The tri-band BPF prototype was validated using the Anritsu MS4642B 20 GHz Vector Network Analyzer. The measured and E-simulated results have been compared with good agreement.

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Section: Introductionmentioning

confidence: 99%

Tri-Band Bandpass Filter Using Mixed Short/Open Circuited Stubs and Q-Factor With Controllable Bandwidth for Was, Ism, and 5g Applications

Massamba¹,

Mpele²,

Mbango³

2022

PIER C

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“…However, as the operation frequency of ICs increases, the inductive behavior of on-silicon vias (OSV) and vertical interconnections must be considered as in the case of PCB, RDL, and TSV technologies [5,6,7,8,9,10]. The previously performed analyses reported in [11,12] included the characterization of the electromagnetic behavior of via arrays and stacks; in this case, however, the results were obtained only through full-wave simulations. It is interesting to point out the fact that these simulation results indicate that increasing the area of the via array, and consequently the number of vias within the array, not necessarily reduce the associated parasites due to that inductive behaviors become more relevant than the resistive losses when the interconnections are operating at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

Characterization and modeling of on-chip via stacks for RF-CMOS applications

Diaz

Aranda

Torres‐Torres

et al. 2020

IEICE Electron. Express

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This work proposes an experiment-based characterization and modeling approach for interconnection channels including via stacks as vertical transitions. A daisy chain structure implemented in a 0.18 µm RFCMOS process is used for developing and verifying the validity of the proposal. The usefulness of the models is shown by assessing the impact of the vias in a practical resonant rotary traveling wave oscillator (RTWO). The oscillation frequency of the RTWO is reduced 13.7% when the via stack models are included.

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Analysis of On-Silicon-Vias for an Advanced RF-CMOS Process: Experimental Characterization and Modeling

Diaz

Aranda

Gonzalez

2021

2021 18th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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A simple model of inter-metallic connections (vias) in CMOS resonant rotary traveling wave oscillator (RTWO)

Cited by 3 publications

References 9 publications

Tri-Band Bandpass Filter Using Mixed Short/Open Circuited Stubs and Q-Factor With Controllable Bandwidth for Was, Ism, and 5g Applications

Tri-Band Bandpass Filter Using Mixed Short/Open Circuited Stubs and Q-Factor With Controllable Bandwidth for Was, Ism, and 5g Applications

Characterization and modeling of on-chip via stacks for RF-CMOS applications

Analysis of On-Silicon-Vias for an Advanced RF-CMOS Process: Experimental Characterization and Modeling

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