A simple method of depositing oxygen-free titanium silicide films using vacuum evaporation

Ahmad, Sarfaraz; Pachauri, J. P.; Akhtar, Jamil

doi:10.1016/0040-6090(86)90383-4

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1990

1997

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“…The authors acknowledge the assistance of Dr. Carlton Osburn, Dr. A. Reisman, the staff of MCNC, and Mr. William Weltmer from The BOC Group Technical Center. Manuscript submitted Aug. 27, 1990; revised manuscript received Nov. 5, 1990.…”

Section: Acknowledgmentsmentioning

confidence: 99%

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Sheet Resistance Studies of Reactively Evaporated Ti in Nitrogen and Argon for Silicide Formation

Berger

Adema

1991

J. Electrochem. Soc.

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process, which is used in our ASPECT 2 (a single poly emitter coupled technology) process.At one point of time, SOG films in the pre-metal dielectric layer (PMDL) had incidents of delamination after plasma partial etchback. A typical example of delaminated SOG film is shown in Fig. 1. Scanning electron microscope (SEM) cross-sectional imaging of the delaminated area further confirmed the delamination. A typical premetal dielectric layer is shown schematically in Fig. 2. Phos-

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Section: Acknowledgmentsmentioning

confidence: 99%

“…Various alternative processes have been proposed to limit this type of contamination. These incorporate protective coatings formed from additional depositions of silicon (5,6), titanium nitride (7,8), and other metals (9).…”

mentioning

confidence: 99%