A simple method for synthesizing VO2 with almost coincident hysteresis loops on Si substrate containing TiO2 buffer layer

Zheng, Tan; Sang, Jingxin; Hua, Zhiwei; Xu, Lei; Xu, Xiaofeng; Wang, Chunrui; Wu, Binhe

doi:10.1016/j.jallcom.2021.158755

Cited by 9 publications

(2 citation statements)

References 39 publications

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“…This illustrates that the W dopant not only reduces the transition temperature but also reduces the width of the hysteresis loop. Previous studies suggested that ∆T is closely linked to the grain size, lattice stress, impurity phase, and crystallinity of VO 2 film [30,31]. Structural defects induced by W doping act as nucleation sites of the phase transition [32,33].…”

Section: Thermochromic Propertiesmentioning

confidence: 99%

Towards Room Temperature Phase Transition of W-Doped VO2 Thin Films Deposited by Pulsed Laser Deposition: Thermochromic, Surface, and Structural Analysis

et al. 2023

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Vanadium dioxide (VO2) with an insulator-to-metal (IMT) transition (∼68 °C) is considered a very attractive thermochromic material for smart window applications. Indeed, tailoring and understanding the thermochromic and surface properties at lower temperatures can enable room-temperature applications. The effect of W doping on the thermochromic, surface, and nanostructure properties of VO2 thin film was investigated in the present proof. W-doped VO2 thin films with different W contents were deposited by pulsed laser deposition (PLD) using V/W (+O2) and V2O5/W multilayers. Rapid thermal annealing at 400–450 °C under oxygen flow was performed to crystallize the as-deposited films. The thermochromic, surface chemistry, structural, and morphological properties of the thin films obtained were investigated. The results showed that the V5+ was more surface sensitive and W distribution was homogeneous in all samples. Moreover, the V2O5 acted as a W diffusion barrier during the annealing stage, whereas the V+O2 environment favored W surface diffusion. The phase transition temperature gradually decreased with increasing W content with a high efficiency of −26 °C per at. % W. For the highest doping concentration of 1.7 at. %, VO2 showed room-temperature transition (26 °C) with high luminous transmittance (62%), indicating great potential for optical applications.

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Section: Thermochromic Propertiesmentioning

confidence: 99%

Towards Room Temperature Phase Transition of W-Doped VO2 Thin Films Deposited by Pulsed Laser Deposition: Thermochromic, Surface, and Structural Analysis

et al. 2023

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“…In contrast, the interface between VO 2 and TiO 2 thin films deposited by a sputtering method was clearly observed. 26) Figure 3 shows XRD patterns of the fabricated thin films for different firing temperatures T f from 450 °C to 680 °C. For T f = 450 °C, two diffraction peaks at 27.6°and 28.1°are considered to correspond to rutile TiO 2 (110) and monoclinic (M1) VO 2 (011), respectively.…”

Section: Fabrication Of Vto Thin Filmsmentioning

confidence: 99%

Fabrication of V_1−xTi_xO₂ microbolometers on Si₃N₄/SiO₂ membranes

Van Nhu,

Kawahara,

Samura

et al. 2023

Jpn. J. Appl. Phys.

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V1-xTixO2 (VTO) thin films were fabricated on Si3N4/SiO2/Si substrate by fabricating VO2/TiO2 using carbon thermal reduction metal-organic decomposition (MOD). The V0.65Ti0.35O2 thin films exhibited the suppressed resistance-temperature (R-T) characteristic, showed no metal-insulator transition (MIT) during temperature (10~90 ºC), but the temperature coefficient of resistance was high (TCR = -4.24 %/K). The DC sensitivity of the VTO bolometer was 434 W-1. Then, VTO thin films on Si3N4/SiO2 membranes were realized by CF4+O2 (95%+5%) plasma etching at 200 W for 5 min, followed by wet etching of the backside of the substrates, using KOH solution (20% by weight) at 60 ºC for 8 hrs. VTO thin films on Si3N4/SiO2 membranes had a high DC sensitivity of 9876 W-1, which was 20 times higher than the film on Si3N4/SiO2/Si substrate.

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An Interesting Functional Phase Change Material VO₂: Response to Multivariate Control and Extensive Applications in Optics and Electronics

Liu,

Chai

et al. 2023

Adv Elect Materials

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Under physical conditions such as TC = 68 °C, Vanadium dioxide (VO2) undergoes a reversible transformation from a monoclinic phase to a tetragonal rutile phase. This transformation is accompanied by a series of changes in physical properties, including transmittance, conductivity, and refractive index, which make it an excellent functional material. Based on this, VO2 has been extensively researched and applied in the fields of electronics and optics, yielding remarkable results and making it a hot research material. This paper reviews the phase transition mechanisms and optical/electrical properties of VO2, as well as its phase transition hysteresis. From the application perspective, this paper summarizes the modulation content under various external excitations and the element doping effects. Finally, this paper summarizes the classic VO2‐based devices, and points out the development direction and potential of VO2 in optics and electronics. This review provides a systematic summary of VO2, which is useful for its practical applications.

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A simple method for synthesizing VO2 with almost coincident hysteresis loops on Si substrate containing TiO2 buffer layer

Cited by 9 publications

References 39 publications

Towards Room Temperature Phase Transition of W-Doped VO2 Thin Films Deposited by Pulsed Laser Deposition: Thermochromic, Surface, and Structural Analysis

Towards Room Temperature Phase Transition of W-Doped VO2 Thin Films Deposited by Pulsed Laser Deposition: Thermochromic, Surface, and Structural Analysis

Fabrication of V_1−xTi_xO₂ microbolometers on Si₃N₄/SiO₂ membranes

An Interesting Functional Phase Change Material VO₂: Response to Multivariate Control and Extensive Applications in Optics and Electronics

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A simple method for synthesizing VO2 with almost coincident hysteresis loops on Si substrate containing TiO2 buffer layer

Cited by 9 publications

References 39 publications

Towards Room Temperature Phase Transition of W-Doped VO2 Thin Films Deposited by Pulsed Laser Deposition: Thermochromic, Surface, and Structural Analysis

Towards Room Temperature Phase Transition of W-Doped VO2 Thin Films Deposited by Pulsed Laser Deposition: Thermochromic, Surface, and Structural Analysis

Fabrication of V1−x Ti x O2 microbolometers on Si3N4/SiO2 membranes

An Interesting Functional Phase Change Material VO2: Response to Multivariate Control and Extensive Applications in Optics and Electronics

Contact Info

Product

Resources

About

Fabrication of V_1−xTi_xO₂ microbolometers on Si₃N₄/SiO₂ membranes

An Interesting Functional Phase Change Material VO₂: Response to Multivariate Control and Extensive Applications in Optics and Electronics