A Simple Method for Gettering of Nickel within the Ni-Metal-Induced Lateral Crystallization Polycrystalline Silicon Film

Improved Gettering Efficiency of Ni from Nickel-Mediated Crystallization Silicon Using Phosphorus-Doped Amorphous Silicon

“…12 After the formation of gettering layers and the gettering process, the Ni-gettering layers (a-Si and P-a-Si) were examined by optical microscopy (OM) to investigate the gettering efficiency. The results are shown in Fig.…”

“…In the figure, the pink region was a-Si and the green region was needle-like NILC poly-Si, which has been verified using scanning electron microscopy (SEM) and TEM. 12 The pale-green region in Fig. 3b was NILC poly-Si on NoGET film underneath the chem-SiO 2 layer.…”

“…They involve using a-Si/silicon-nitride films, a-Si-coated Si wafer, and contact holes covered with a-Si film. [12][13][14] During the gettering process, Ni atoms were diffused from the NILC film to the a-Si layer due to the concentration gradient. However, when the system reached equilibrium, no more Ni diffused into the gettering layer.…”

Using Phosphorus-Doped α-Si Gettering Layers to Improve NILC Poly-Si TFT Performance

“…In previous work we used an amorphous silicon (a-Si) layer and an etch-stop layer to reduce Ni residues inside NILC poly-Si. [9][10][11] In this study, the performance of these devices was extensively investigated.…”

Gettering of Nickel within the Ni-Metal Induced Lateral Crystallization Polycrystalline Silicon Film through the Contact Holes

“…13,14) These processes are complicated and require high process temperatures and can damage the poly-Si active region. In our previous study, 15,16) two simple methods were developed to diminish the Ni impurity. By capping gettering layers on NILC poly-Si film, the Ni impurity diffused into gettering layers after gettreing process.…”