A simple method for automated extraction of BJT thermal resistance from Early voltage measurements

Abstract

Wepresent a methodology for thermal resistance RrH extraction from the Early voltage dependence on collector current. This method does not require pulsed, temperature, or frequency measurements and hence, can be easily automated:' Results for a BJT from an SOUDTI Complementay BiCMOS process and for a SiCe HBT from a 5OGHz BiCMOS process are presented and comparison to SPICE simulations is made.