A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver Applications

Peng, Lulu; Wu, Renbiao; Fang, Xiangming; Toyoda, Yoshiaki; Akahane, Masashi; Yamaji, Masaharu; Sumida, Hitoshi; Sin, J.K.O.

doi:10.1109/led.2013.2291785

Cited by 12 publications

(9 citation statements)

References 8 publications

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“…Thin film IPD technology, such as resistors, capacitors, inductors in the common substrate, provides a wide range of passive component values with higher density and lower process tolerance. [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40]…”

Section: The Mmw Devices Based On Tsv Technologiesmentioning

confidence: 99%

“…Based on through-silicon-via technology, an ultracompact Butterworth low-pass filter (LPF) with area of 0.01 mm 2 was proposed, shown by Figure 14, which exhibited ultracompact size and superior filtering characteristics compared with the existing LPF. 39 What is more, a simple low cost monolithic 3D throughsilicon-via coreless transformer was designed and fabricated for high-voltage gate driver applications, 40 as shown by Figure 15. The transformer comprised the primary coil embedded in the bottom layer of Si substrate and the secondary coil built on the front-side of the substrate.…”

Section: Tsv-based Filtersmentioning

confidence: 99%

“…3D packaging based on the TSV technology can be developed in multiple applications such as various integrated active components as well as passive devices. There have been efforts to realize passive components on the 3D IC to increase the packaging density, [26][27][28][29][30][31][32][33][34][35][36][37][38][39][40] which has become attractive due to the increased integration density, low power dissipation, reduced transmission delay, and high bandwidth. The 3D IC technology provides opportunities for on-chip TSV-based passive components close to other active circuits, yielding compact RF and analog/ mixed-signal systems.…”

Section: Introductionmentioning

confidence: 99%

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Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

Liu

Zhu

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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As the short vertical interconnections can significantly shorten the interconnect length between different circuits, three‐dimensional integrated circuits (3D ICs) based on the through‐silicon via (TSV) technology are considered as one of the most promising alternatives to overcome the scaling limits of Moore's low. Moreover, as the silicon technologies have been progressively expanded into the millimeter‐wave (mmW) realm, the TSV technology also provides a promising option to realize a compact system with high performance and operating frequencies. This article provides an overview of recent advances in the development of TSV technologies and silicon‐based passive devices for mmW applications. As various kinds of TSV losses are detrimental to the electrical performance of 3D ICs, especially in mmW systems, TSVs exploiting novel structures and materials still needs much more research, making it possible to integrate the passive device on 3D ICs and providing a promising option to realize a compact mmW system with excellent electrical performance and system reliability.

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Section: The Mmw Devices Based On Tsv Technologiesmentioning

confidence: 99%

Section: Tsv-based Filtersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

Liu

Zhu

Yang

et al. 2018

Int J RF Microw Comput Aided Eng

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“…Generally, traditional magnetic isolated drivers can be used in high-frequency switching occasions. However, these drivers are typically limited by the magnetic reset time of coupling transformer [11], [12]; if the power converter operates in a wide range of duty cycles, such as in the case of SPWM inverters where duty cycles range in nearly 0%-100%, then designing proper components and parameters for traditional magnetic isolated drivers is difficult, which limits their utilization in various applications [13]- [15]. A circuit proposed in [16], [17] converts the pulse edges of the driving signal to narrow pulses, magnetically couples them to the secondary side, and the signal is then reconstructed and restored by the circuit on the secondary side.…”

Section: Introductionmentioning

confidence: 99%

A MOSFET's Driver Applied to High-frequency Switching with Wide Range of Duty Cycles

Zhang¹,

Xie²

2015

Journal of Power Electronics

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A MOSFET's gate driver based on magnetic coupling is investigated. The gate driver can meet the demands in applications for wide range of duty cycles and high frequency. Fully galvanic isolation can be realized, and no auxiliary supply is needed. The driver is insensitive to the leakage inductor of the isolated transformer. No gate resistor is needed to damp the oscillation, and thus the peak output current of the gate driver can be improved. Design of the driving transformer can also be made more flexible, which helps to improve the isolation voltage between the power stage and the control electronics, and aids to enhance the electromagnetic compatibility. The driver's operation principle is analyzed, and the design method for its key parameters is presented. The performance analysis is validated via experiment. The disadvantages of the traditional magnetic coupling and optical coupling have been conquered through the investigated circuit.

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“…Gate insulation systems have been reported by using a pulse transformer [1] or by coreless PCB transformers and onchip transformer [2,3]. Nevertheless, these solutions are intuitional with only one design of transformer [4] or required an extra technology process and a large consumption of silicon [5]. Additionally, accurate predictive models and a correction method of measurement are required while the dimension of the ICT tends to shrink and needs to be operated at high range of frequency up to few GHz.…”

Section: Introductionmentioning

confidence: 99%

Modeling and characterization of 0.35 μm CMOS coreless transformer for gate drivers

Rouger

Lembeye

et al. 2014

2014 IEEE 26th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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In this paper, a monolithic solution based on integrated coreless transformer (ICT) for galvanic isolation and power transfer application is demonstrated. First, the characterization of ICTs is investigated by a set of five devices with stacked topology but different geometrical parameters fabricated in a 0.35 µm H35B4M3 CMOS technology from AMS. Second, the behavior of these ICTs is also predicted by electromagnetic (EM) simulation in Ansoft HFSS and analyzed by their equivalent electrical model. The measured results have shown a peak of voltage gain of -3 dB with the design of 300 µm of diameter while charging with the input capacitance of 900 fF of the demodulated circuit. Finally, an integrated gate driver is also fabricated using the optimal design of ICT, achieving a compact area of 0.72 mm² and offers 1.8 kV of isolation. The experimental results of this gate driver have validated the use of isolated signal and energy transfer by on-chip transformer for both high side and low side applications.

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A Simple Low Cost Monolithic Transformer for High-Voltage Gate Driver Applications

Cited by 12 publications

References 8 publications

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

Electrical models of through silicon Vias and silicon‐based devices for millimeter‐wave application

A MOSFET's Driver Applied to High-frequency Switching with Wide Range of Duty Cycles

Modeling and characterization of 0.35 μm CMOS coreless transformer for gate drivers

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