Modeling and characterization of 0.35 μm CMOS coreless transformer for gate drivers

Abstract

In this paper, a monolithic solution based on integrated coreless transformer (ICT) for galvanic isolation and power transfer application is demonstrated. First, the characterization of ICTs is investigated by a set of five devices with stacked topology but different geometrical parameters fabricated in a 0.35 µm H35B4M3 CMOS technology from AMS. Second, the behavior of these ICTs is also predicted by electromagnetic (EM) simulation in Ansoft HFSS and analyzed by their equivalent electrical model. The measured results have shown a peak of voltage gain of -3 dB with the design of 300 µm of diameter while charging with the input capacitance of 900 fF of the demodulated circuit. Finally, an integrated gate driver is also fabricated using the optimal design of ICT, achieving a compact area of 0.72 mm² and offers 1.8 kV of isolation. The experimental results of this gate driver have validated the use of isolated signal and energy transfer by on-chip transformer for both high side and low side applications.

Analysis of on‐chip GSG pads coupling effects on laterally‐coupled and double‐stacked inductors in the millimeter‐wave frequency regime

“…Second, the rectangular typology has competitive performance with its hexagonal and circular counterparts and is economically attractive. It has even been reported to give outstanding inductance and efficient magnetic coupling links for wireless data transfer as compared to octagonal and circular ones 5,22,23 . Though circular inductor typology is widely reported for high‐quality factors due to low ohmic loss, it is technically expensive as compared to square or rectangular ones.…”

“…It has even been reported to give outstanding inductance and efficient magnetic coupling links for wireless data transfer as compared to octagonal and circular ones. 5,22,23 Though circular inductor typology is widely reported for high-quality factors due to low ohmic loss, it is technically expensive as compared to square or rectangular ones. Third, in light of the objectives of the study, the inductor typology may not substantially alter the accuracy of the findings in any way because the primary focus of the study is not about typology but the coupling characteristics.…”

“…The maximum power transfer is proportional to the strength of the coupled magnetic field, the inductance, and the operating frequency, but inversely proportional to the gap between the coupled inductors. Both laterally coupled and stacked inductors have been studied to exhibit comparatively different coupling properties with corresponding losses 5 . A stacked inductor model was investigated in Ref.…”

“…13,14 These occur as a result of current crowding which is also known as eddy current in metal traces, and eventually reduces the inductance of the conductor 16,17 and concatenates with the internal circuit. 18 Though coupled inductors and pad models have been widely reported in the literature, 5,7,19 they are reported as separate models. Besides, such models are complex and consist of many parameters which cannot be easily adapted to investigate the combined coupling and impedance effects of the GSG pad on the coupled transformers.…”

CMOS Gate Driver with fast short circuit protection for SiC MOSFETs

“…In order to ensure these operations, the gate driver should adapt to the specificities of SiC MOSFETs. Essentially, the driving peak current, small propagation delay, high frequency operation, and small power consumption [2]. Another performance feature to be taken into account by the gate driver is the reliability of detection and protection against short circuit (SC) events.…”