A simple diode model with reverse recovery

Lauritzen, P.O.; Ma, Chao

doi:10.1109/63.76804

Cited by 202 publications

(76 citation statements)

References 4 publications

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“…In the lumped-charge approach [124]- [133], the chargestoring region is subdivided into several sections, and the charge of each section is assigned to a charge storage node. The charge difference between two neighboring nodes determines the current.…”

Section: Lumped Modelmentioning

confidence: 99%

“…This topic has not been treated with sufficient attention in the case of power semiconductor models for circuit simulation so far. Only in a part of the modeling papers the required parameters are declared and methods of their determination are described [4], [9], [11]- [13], [20], [21], [23], [28], [32], [37], [38], [49], [50], [81], [83], [92], [126], [132], [133]. For single examples, excellent agreement with measurements can be obtained by adjusting the model parameters to the individual case.…”

Section: Parametersmentioning

confidence: 99%

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Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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Section: Lumped Modelmentioning

confidence: 99%

Section: Parametersmentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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“…A one-dimension model of a diode, which expresses physical meanings separately, has been proposed [4], but the expression is not enough to produce a physical model. This paper proposes a numerical model of a pn diode which is a basic semiconductor.…”

Section: Introductionmentioning

confidence: 99%

PN Diode model Based on Divided Charge Distribution For EMTP-Type Simulators

Yamamoto¹,

Nagaoka

Ametani

2000

IEEJ Trans. PE

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“…Lauritzen and Ma [1] used a modified charge storage model, but the model does not reflect the fact that the intrinsic region width is a function of applied voltage and does not work well in the general LRC circuit. Furthermore, the model lacked verification by experiment.…”

Section: Introductionmentioning

confidence: 99%

A moving boundary diffusion model for PIN diodes

Zhang¹,

Pappas²

2001

IEEE Trans. Magn.

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Abstract--A large number of diode models exist that simulate the reverse recovery process. Many models assume an abrupt change of current during reverse recovery. Some models were verified by calculating the diode's response after the application of a step forcing voltage. Only a few models described in the literature compare simulation results with experimental data. The abrupt change in current calculated by most diode models will ensure large di/dt, which in turn will result in the calculation of an excessive voltage spike. The diode model described in this paper is aimed at the application of high power rectification where the exciting voltage is more likely to be sinusoidal rather than a step change. The formulation is particularly useful in modeling very high power systems such as electromagnetic launch systems where calculation speed and accuracy of results are held at a premium. The model is formulated based on a p+in+ type diode. In addition, by considering the fact that the width of the intrinsic bulk region reduces significantly during the reverse biased condition, the model will more accurately calculate reverse recovery current and voltage. Finally, the model is verified by comparing simulation results to experimental data.

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A simple diode model with reverse recovery

Cited by 202 publications

References 4 publications

Status and trends of power semiconductor device models for circuit simulation

Status and trends of power semiconductor device models for circuit simulation

PN Diode model Based on Divided Charge Distribution For EMTP-Type Simulators

A moving boundary diffusion model for PIN diodes

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