A Simple Analytic Modeling Method for SPAD Timing Jitter Prediction

Sun, Feiyang; Xu, Yue; Wu, Zhongze; Zhang, Jun

doi:10.1109/jeds.2019.2895151

Cited by 21 publications

(15 citation statements)

References 21 publications

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“…The timing jitter decreases for increasing V ex as shown in Figure 11 b. This is due to lower statistical fluctuation in avalanche build-up [ 23 , 24 ].…”

Section: Resultsmentioning

confidence: 99%

Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance

Jegannathan

Dries

Kuijk

2020

Sensors

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Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well. In this work, we present a second improved version of the “current-assisted” single-photon avalanche diode, fabricated in a conventional 350 nm CMOS process, having good NIR sensitivity owing to 14 μm thick epilayer for photon absorption. The presented device has a photon absorption area of 30 × 30 µm2, with a much smaller central active area for avalanche multiplication. The photo-electrons generated in the absorption area are guided swiftly towards the central area with a drift field created by the “current-assistance” principle. The central active avalanche area has a cylindrical p-n junction as opposed to the square geometry from the previous iteration. The presented device shows improved performance in all aspects, most notably in photon detection probability. The p-n junction capacitance is estimated to be ~1 fF and on-chip passive quenching with source followers is employed to conserve the small capacitance for bringing monitoring signals off-chip. Device physics simulations are presented along with measured dark count rate (DCR), timing jitter, after-pulsing probability (APP) and photon detection probability (PDP). The presented device has a peak PDP of 22.2% at a wavelength of 600 nm and a timing jitter of 220 ps at a wavelength of 750 nm.

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“…The timing jitter decreases for increasing V ex as shown in Figure 11 b. This is due to lower statistical fluctuation in avalanche build-up [ 23 , 24 ].…”

Section: Resultsmentioning

confidence: 99%

Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance

Jegannathan

Dries

Kuijk

2020

Sensors

View full text Add to dashboard Cite

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“…The values of every single parameter of the SPAD model are usually estimated through TCAD simulations or measured on fabricated devices. Even more sophisticated models can be found in the literature, based on Verilog-A language, in which a mimic of statistics and noise is introduced [48][49][50][51].…”

Section: Spad Modelingmentioning

confidence: 99%

Historical Perspectives, State of art and Research Trends of Single Photon Avalanche Diodes and Their Applications (Part 1: Single Pixels)

et al. 2022

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The ability to detect single photons is becoming an enabling key capability in an increasing number of fields. Indeed, its scope is not limited to applications that specifically rely on single photons, such as quantum imaging, but extends to applications where a low signal is overwhelmed by background light, such as laser ranging, or in which faint excitation light is required not to damage the sample or harm the patient. In the last decades, SPADs gained popularity with respect to other single-photon detectors thanks to their small size, possibility to be integrated in Complementary Metal-Oxide Semiconductor processes, room temperature operability, low power supply and, above all, the possibility to be fast gated (to time filter the incoming signal) and to precisely timestamp the detected photons. The development of large digital arrays that integrates the detectors and circuits has allowed the implementation of complex functionality on-chip, tailoring the detectors to suit the need of specific applications. This review proposes a complete overview of silicon SPADs characteristics and applications. In this Part I, starting with the working principle, simulation models and required frontend, the paper moves to the most common parameters adopted in literature for characterizing SPADs, and describes single pixels applications and their performance. In the next Part II, the focus is then posed on the development of SPAD arrays, presenting some of the most notable examples found in literature. The actual exploitation of these designs in real applications (e.g., automotive, bioimaging and radiation detectors) is then discussed.

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“…The jitter is usually defined as the Full-Width at Half-Maximum (FWHM) statistical distribution of time to detect avalanche breakdown, but the distribution tail is also of essential importance as it can impact the time of flight measurement accuracy. Jitter can be inferred from the avalanche build up time itself [10], but also from the carrier transit time within the device toward the junction [27]. While the build up typically occurs within a few tens of picoseconds, the carrier drift and diffusion can be longer, especially for SPADs in which a large collection region extends beyond the high field avalanche region [28].…”

Section: Jitter Modelingmentioning

confidence: 99%

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Helleboid

Rideau

Grebot

et al. 2022

IEEE J. Electron Devices Soc.

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A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers' trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.Index Terms-avalanche breakdown probability, breakdown voltage, jitter, photon detection efficiency (PDE), single-photon avalanche diode (SPAD), Technology computer-aided design (TCAD) I. INTRODUCTION AND DEVICE STRUCTURESS INGLE-Photon Avalanche Diodes (SPAD) are key optoelectronic detectors for medical imaging, camera ranging, and automotive laser imaging detection and ranging (LiDAR) applications. Currently, the device leading the market of SPADs is a micrometric silicon (Si) PN junction associated with nearby CMOS electronics biasing the system above the breakdown voltage (BV) [1].The main figure of merit for the sensor sensitivity is the photon detection efficiency (PDE), which is the probability that a photon hitting the SPAD is detected. It can be evaluated by multiplying the probability that an incoming photon hits the photosensitive area of the sensor, the fill factor (FF), by the probability that the photon is absorbed within the Manuscript submitted the February 8th 2022. The authors gratefully acknowledge VIZTA project (https://www.vizta-ecsel.eu/) for

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A Simple Analytic Modeling Method for SPAD Timing Jitter Prediction

Cited by 21 publications

References 21 publications

Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance

Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance

Historical Perspectives, State of art and Research Trends of Single Photon Avalanche Diodes and Their Applications (Part 1: Single Pixels)

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

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