A silicon pressure sensor using mos ring oscillators

Neumeister, J.; Schuster, G.; Münch, Waldemar von

doi:10.1016/0250-6874(85)85018-6

Cited by 50 publications

(12 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although it is considered as the undesired problem in the 80's [2], nowadays this feature is applied to various sensors due to the good sensitivity [3,4]. Some researchers have studied the relationship between the sensitivity and applied electric conditions to find the maximum sensitivity [5].…”

Section: Introductionmentioning

confidence: 99%

Geometrical study of MOSFET for improved stress sensitivity

Ahn

Lee

Moon

2007

2007 Digest of Papers Microprocesses and Nanotechnology

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Geometrical study of MOSFET for improved stress sensitivity

Ahn

Lee

Moon

2007

2007 Digest of Papers Microprocesses and Nanotechnology

View full text Add to dashboard Cite

“…Beside the more classical passive resistors mounted in Wheatstone bridges [9][10][11][12], novel active structures have been developed and already reported [13][14][15][16]. These inherently co-integrated solutions are using transistors mounted in ring oscillators placed on thick silicon membranes, as pressure sensitive elements.…”

Section: Introductionmentioning

confidence: 99%

Characterization of FD SOI devices and VCO’s on thin dielectric membranes under pressure

Olbrechts

Rue

Suski³

et al. 2007

Solid-State Electronics

View full text Add to dashboard Cite

“…Based on the piezoresistive effect of MOS RO, the accelerometer transduces the acceleration into frequency output. A double-gate metal-oxide semiconductor field-effect transistor (MOS-FET) mixer is introduced to improve the characteristics of the accelerometer, especially temperature compensation [4].…”

Section: Introductionmentioning

confidence: 99%

Accelerometer Design Using MOS Ring Oscillator

Zhang

Yue

Liu

2006

Front. Electr. Electron. Eng. China

View full text Add to dashboard Cite

A digital accelerometer is developed by using a ring oscillator (RO) and a mixer. The sensitive unit of the accelerometer is the metal-oxide semiconductor (MOS) ROs located on silicon beams. Based on the piezoresistive effect of the MOS RO, the accelerometer transduces the acceleration into frequency output. The syntonic frequency of the MOS RO changes in relation to many environmental elements, such as temperature, source voltage, and so on. The mixer is an interior signal processor that improves the output signal characteristics, with the digital output signal representing the frequency change. As the accelerometer is based on the piezoresistive effect of the MOS RO, the frequency characteristics of the MOS RO and its relationship with the acceleration are described. The device has been fabricated using standard integrated circuits processing methods combined with the Micro-Electro-Mechanical Systems process. The characteristics of the sample chip are in agreement with the theoretical predictions. The accelerometer has a high sensitivity of 6.91 kHz/g, a low temperature coefficient, and a simple fabrication process.

show abstract

A silicon pressure sensor using mos ring oscillators

Cited by 50 publications

References 5 publications

Geometrical study of MOSFET for improved stress sensitivity

Geometrical study of MOSFET for improved stress sensitivity

Characterization of FD SOI devices and VCO’s on thin dielectric membranes under pressure

Accelerometer Design Using MOS Ring Oscillator

Contact Info

Product

Resources

About