A Silicon Nitride Microring Based High-Speed, Tuning-Efficient, Electro-Refractive Modulator

Karempudi, Venkata Sai Praneeth; Thakkar, Ishan; Hastings, J. T.

doi:10.1109/ises54909.2022.00069

Cited by 3 publications

(2 citation statements)

References 38 publications

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“…These properties are instrumental in achieving efficient light confinement and low crosstalk, essential for the multiplexer’s performance. The high refractive index contrast with the SiO 2 results in strong optical confinement [ 25 ], enabling tight bends and compact device geometries, which are essential for densely packed photonic circuits.…”

Section: Introductionmentioning

confidence: 99%

Data Center Four-Channel Multimode Interference Multiplexer Using Silicon Nitride Technology

Isakov,

Frishman,

Malka

2024

Nanomaterials

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The operation of a four-channel multiplexer, utilizing multimode interference (MMI) wavelength division multiplexing (WDM) technology, can be designed through the cascading of MMI couplers or by employing angled MMI couplers. However, conventional designs often occupy a larger footprint, spanning a few millimeters, thereby escalating the energy power requirements for the photonic chip. In response to this challenge, we propose an innovative design for a four-channel silicon nitride (Si3N4) MMI coupler with a compact footprint. This design utilizes only a single MMI coupler unit, operating within the O-band spectrum. The resulting multiplexer device can efficiently transmit four channels with a wavelength spacing of 20 nm, covering the O-band spectrum from 1270 to 1330 nm, after a short light propagation of 22.8 µm. Notably, the multiplexer achieves a power efficiency of 70% from the total input energy derived from the four O-band signals. Power losses range from 1.24 to 1.67 dB, and the MMI coupler length and width exhibit a favorable tolerance range. Leveraging Si3N4 material and waveguide inputs and output tapers minimizes light reflection from the MMI coupler at the input channels. Consequently, this Si3N4-based MMI multiplexer proves suitable for deployment in O-band transceiver data centers employing WDM methodology. Its implementation offers the potential for higher data bitrates while maintaining an exemplary energy consumption profile for the chip footprint.

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Section: Introductionmentioning

confidence: 99%

Data Center Four-Channel Multimode Interference Multiplexer Using Silicon Nitride Technology

Isakov,

Frishman,

Malka

2024

Nanomaterials

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“…This thermal resilience ensures reliable and consistent performance, even under challenging operating conditions [ 23 , 24 ]. Si 3 N 4 provides superior index contrast advantages compared to Si when considering the Si 3 N 4 -on-SiO 2 platform [ 25 ]; it exhibits higher vulnerability to propagation losses due to reduced sensitivity to edge roughness and variations in device dimensions caused by fabrication process differences [ 25 , 26 ]. These variations can affect crucial parameters such as waveguide dimensions and etch depth, impacting the effective index.…”

Section: Introductionmentioning

confidence: 99%

An Optical 1×4 Power Splitter Based on Silicon–Nitride MMI Using Strip Waveguide Structures

Frishman,

Malka

2023

Nanomaterials

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This paper presents a new design for a 1 × 4 optical power splitter using multimode interference (MMI) coupler in silicon nitride (Si3N4) strip waveguide structures. The main functionality of the proposed design is to use Si3N4 for dealing with the back reflection (BR) effect that usually happens in silicon (Si) MMI devices due to the self-imaging effect and the higher index contrast between Si and silicon dioxide (SiO2). The optimal device parameters were determined through numerical optimizations using the beam propagation method (BPM) and finite difference time domain (FDTD). Results demonstrate that the power splitter with a length of 34.6 μm can reach equal distribution power in each output port up to 24.3% of the total power across the O-band spectrum with 0.13 dB insertion loss and good tolerance MMI coupler parameters with a shift of ±250 nm. Additionally, the back reflection range over the O-band was found to be 40.25–42.44 dB. This demonstrates the effectiveness of the incorporation using Si3N4 MMI and adiabatic input and output tapers in mitigating unwanted BR to ensure that a good signal is received from the laser. This design showcases the significant potential for data-center networks, offering a promising solution for efficient signal distribution and facilitating high-performance and reliable optical signal routing within the O-band range. By leveraging the advantages of Si3N4 and the MMI coupler, this design opens possibilities for advanced optical network architectures and enables efficient transmission of optical signals in the O-band range.

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An Analysis of Various Design Pathways Towards Multi-Terabit Photonic On-Interposer Interconnects

Karempudi,

Bashir,

Thakkar

2024

J. Emerg. Technol. Comput. Syst.

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In the wake of dwindling Moore’s Law, to address the rapidly increasing complexity and cost of fabricating large-scale, monolithic systems-on-chip (SoCs), the industry has adopted dis-aggregation as a solution, wherein a large monolithic SoC is partitioned into multiple smaller chiplets that are then assembled into a large system-in-package (SiP) using advanced packaging substrates such as silicon interposer. For such interposer-based SiPs, there is a push to realize on-interposer inter-chiplet communication bandwidth of multi-Tb/s and end-to-end communication latency of no more than 10 ns. This push comes as the natural progression from some recent prior works on SiP design, and is driven by the proliferating bandwidth demand of modern data-intensive workloads. To meet this bandwidth and latency goal, prior works have focused on a potential solution of using the silicon photonic interposer (SiPhI) for integrating and interconnecting a large number of chiplets into an SiP. Despite the early promise, the existing designs of on-SiPhI interconnects still have to evolve by leaps and bounds to meet the goal of multi-Tb/s bandwidth. However, the possible design pathways, upon which such an evolution can be achieved, have not been explored in any prior works yet. In this paper, we have identified several design pathways that can help evolve on-SiPhI interconnects to achieve multi-Tb/s aggregate bandwidth. We perform an extensive link-level and system-level analysis in which we explore these design pathways in isolation and in different combinations of each other. From our link-level analysis, we have observed that the design pathways that simultaneously enhance the spectral range and optical power budget available for wavelength multiplexing can render aggregate bandwidth of up to 4 Tb/s per on-SiPhI link. We also show that such high-bandwidth on-SiPhI links can substantially improve the performance and energy-efficiency of the state-of-the-art CPU and GPU chiplets based SiPs.

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A Silicon Nitride Microring Based High-Speed, Tuning-Efficient, Electro-Refractive Modulator

Cited by 3 publications

References 38 publications

Data Center Four-Channel Multimode Interference Multiplexer Using Silicon Nitride Technology

Data Center Four-Channel Multimode Interference Multiplexer Using Silicon Nitride Technology

An Optical 1×4 Power Splitter Based on Silicon–Nitride MMI Using Strip Waveguide Structures

An Analysis of Various Design Pathways Towards Multi-Terabit Photonic On-Interposer Interconnects

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