A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules

Comeau, J.P.; Morton, M.A.; Kuo, Wei-Min Lance; Thrivikraman, Tushar; Andrews, J.M.; Grens, C.M.; Cressler, John D.; Papapolymerou, John; Mitchell, Mark A.

doi:10.1109/jssc.2008.2002335

Cited by 60 publications

(16 citation statements)

References 14 publications

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“…Additionally, for a given power-aperture-gain product, P e can be reduced drastically, at the expense of a modest increase in N [3]. However, for too small P e values, N (and cost) increases dramatically.…”

Section: Iet Microwaves Antennas and Propagationmentioning

confidence: 99%

“…It has a direct impact on the noise performance and in return on the sensitivity of T/R module. State-of-the-art T/R modules have NF close to 5 dB [1,3,7]. A practical loss for the T/R switch is around 2 dB.…”

Section: Iet Microwaves Antennas and Propagationmentioning

confidence: 99%

“…Recently, it has been reported that the X-band T/R module cores are using the SiGe BiCMOS technologies [1,3,4]. The T/R module at [1] provides high 1 dB compression point (18 dBm), 20 dB RX and 30 dB TX gain.…”

Section: Introductionmentioning

confidence: 99%

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X‐band SiGe bi‐complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications

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Ozeren

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et al. 2015

IET Microwaves, Antennas & Propagation

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This study presents a transmit/receive (T/R) module core chip with 4-bit operation using 0.25 µm silicongermanium (SiGe) bi-complementary metal-oxide semiconductor (BiCMOS) technology, for X-band phased array RADAR applications. The T/R module core chip consists of sub-blocks such as low noise amplifier, power amplifier, phase shifter, single-pole double-throw switch and variable gain amplifier. Switches incorporate n-type MOS devices while amplifiers are implemented with SiGe heterojunction bipolar transistors. Measurement results for the complete core chip and its individual sub-blocks are reported here. Between 9 and 10 GHz, the constructed T/R module achieves about 11 dB gain for both receiver (RX) and transmitter (TX) chains, while it has −10.5 dBm receiver chain third-order intermodulation intercept point (IIP 3 ), and 16 dBm OP 1 dB for transmitter chain. Root-mean-square phase error is measured as 5, whereas noise figure varies between 4 and 6 dB. The total power dissipation of core chip is about 285 mW, with a total area of 4.9 mm 2 .

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Section: Iet Microwaves Antennas and Propagationmentioning

confidence: 99%

Section: Iet Microwaves Antennas and Propagationmentioning

confidence: 99%

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X‐band SiGe bi‐complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications

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Ozeren

Çalışkan

et al. 2015

IET Microwaves, Antennas & Propagation

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“…However the replacement of HPA and LNA are difficult due to high output power and low noise requirements in the phased array system. On the other hand, Si technology is suitable for core chip because highly integrated multi-function is needed [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules

Hagiwara

Shinjo

Miki

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

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In this paper, an L-band transmitter and receiver MMIC, which is known as a core chip for phased array communication and radar applications is presented. The MMIC is fabricated in 0.18 μm SiGe-BiCMOS process, comprises an RX amplifier, a 5-bit active phase shifter, SPDT switches, and a TX amplifier. The RX amplifier realized low noise and high linearity with dual bias-feed techniques. The measurement results show, in receive mode, a gain of 25.5 dB, a noise figure of 1.9 dB, and an input P1dB of -16 dBm in L-band. The MMIC is capable of providing 32 phase states from 0° to 360°, with an RMS phase error of lower than 2.3° and an RMS gain error of lower than 0.5dB. In transmit mode, the gain of 32 dB, and the saturated output power of 15 dBm are achieved.

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“…These specifications are impossible to simultaneously optimize and require trade-offs that impact system-level design and performance. Next-generation phased-array systems require many thousands of elements or more mounted on non-traditional platforms such as unmanned aerial vehicles (UAVs) that would place additional constraints on receiver performance [1], [2], and [3]. In order to meet cost, performance, and integration objectives, silicon-germanium (SiGe) BiCMOS technology is becoming a platform of choice for radar system designers, since it provides lower cost, higher integration levels (with on-board digital control), and comparable performance to GaAs solutions.…”

Section: Introductionmentioning

confidence: 99%

A two-channel, ultra-low-power, SiGe BiCMOS receiver front-end for X-band phased array radars

Thrivikraman

Kuo

Cressler

2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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We present an ultra-low-power SiGe BiCMOS receiver front-end for X-band phased-array radar systems. The receiver, which consists of two LNAs and a 3-bit phase shifter, consumes only 4 mW of dc power while achieving over 10 dB of gain, less than 5 dB noise figure, and an OTOI of over 10 dBm. In addition, the RMS gain and phase errors were less than 0.5 dB and 2 • , respectively. This design demonstrates possible applications of SiGe HBT technology for use in ultra-low-power radar systems.

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A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules

Cited by 60 publications

References 14 publications

X‐band SiGe bi‐complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications

X‐band SiGe bi‐complementary metal–oxide semiconductor transmit/receive module core chip for phased array RADAR applications

An L-band SiGe BiCMOS core chip MMIC for transmit/receive modules

A two-channel, ultra-low-power, SiGe BiCMOS receiver front-end for X-band phased array radars

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