A silicon based low-g MEMS inertial switch for linear acceleration sensing application

Xiong, Zhuang; Zhang, Fengtian; Pu, Yingdong; Tang, Bin; Yang, Jie; Wang, Chao

doi:10.1109/3m-nano.2015.7425457

Cited by 1 publication

(1 citation statement)

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“…To reduce the contact resistance, it is necessary to apply a layer of low-resistivity metal on the contact surface of the electrodes [ 28 ]. In addition, silicon is not suitable for high impact and high load applications either as a structure layer or as a substrate [ 29 ]. On the other hand, non-silicon switches are mainly fabricated from LIGA (lithographie, galvanoformung and abformung) or ultra-precision processing technology.…”

Section: Introductionmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

Micromachines

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MEMS switch is a movable device manufactured by means of semiconductor technology, possessing many incomparable advantages such as a small volume, low power consumption, high integration, etc. This paper reviews recent research of MEMS switches, pointing out the important performance indexes and systematically summarizing the classification according to driving principles. Then, a comparative study of current MEMS switches stressing their strengths and drawbacks is presented, based on performance requirements such as driven voltage, power consumption, and reliability. The efforts of teams to optimize MEMS switches are introduced and the applications of switches with different driving principles are also briefly reviewed. Furthermore, the development trend of MEMS switch and the research gaps are discussed. Finally, a summary and forecast about MEMS switches is given with the aim of providing a reference for future research in this domain.

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Section: Introductionmentioning

confidence: 99%