A silicon-29 MAS–NMR study of α-silicon nitride and amorphous silicon oxynitride fibres

Chollon, Georges; Hany, Roland; Vogt, Ulrich; Berroth, Karl

doi:10.1016/s0955-2219(97)00162-3

Cited by 27 publications

(23 citation statements)

References 13 publications

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“…[1] In order to reduce the interconnection capacitance, many low k materials have been developed using different methods, such as CVD, spin coating, liquid-phase deposition, porous film formation techniques, and air bridge techniques. [2] Of particular interest are CVD techniques, which have the advantage of being able to completely fill narrow features with a high aspect ratio better than other deposition techniques, and are also generally considered compatible with damascene process flows. Furthermore, a layered structure that promotes adhesion can be easily fabricated by changing the source compounds, so the deposition of low k thin films by CVD appears promising.…”

Section: Methodsmentioning

confidence: 99%

“…[1] Si 3 N 4 materials have interesting properties, such as corrosion and creep resistance, and high strength at elevated temperatures. [2] Recently, there has been considerable interest in advanced, non-oxide, Si-based materials synthesized from inorganic silicon precursors. [3,4] A broad range of such polymer precursors is now available for a wide range of ceramic phase synthesis.…”

mentioning

confidence: 99%

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Si3N4 Fibers Synthesized by Thermal Plasma CVD

Bouyer¹,

Henne²,

Müller³

et al. 2001

Chem. Vap. Deposition

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2001corrosion protection, metal coating, protective coatings corrosion protection, metal coating, protective coatings V 1550 -245Si 3 N 4 Fibers Synthesized by Thermal Plasma CVD.-The title compound is synthesized and deposited by thermal plasma chemical vapor deposition using a fraction of several chlorocarbodisilanes coming from the Mueller-Rochow synthesis as easily volatilized liquid precursor and N 2 as the nitriding agent. The coatings are characterized by XRD and SEM. Experimental conditions such as high substrate temperature and high nitrogen content in the plasma gas promote the deposition of isolated β-Si 3 N 4 fibers oriented perpendicular to the substrate surface. -

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Si3N4 Fibers Synthesized by Thermal Plasma CVD

Bouyer¹,

Henne²,

Müller³

et al. 2001

Chem. Vap. Deposition

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“…-type tetrahedrons. Furthermore, the quadrupole moment of the La 3 + ions broadens the signals and shifts them to lower chemical shift values as compared to other (oxo)nitridosilicates [16][17][18] and impedes the detailed interpretation of chemical shifts. In general, the obtained NMR spectrum with its strongly overlapping signals is in accordance with the crystal structure.…”

Section: High-resolution Electron Microscopymentioning

confidence: 99%

Complex Interrupted Tetrahedral Frameworks in the Nitridosilicates M₇Si₆N₁₅ (M=La, Ce, Pr)

Schmolke¹,

Bichler²,

Johrendt³

et al. 2009

Chemistry A European J

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A new structure type of nitridosilicates with an interrupted framework has been identified for M(7)Si(6)N(15) with M = La, Ce, and Pr. The materials have been synthesized in a radio-frequency furnace at temperatures between 1550-1625 degrees C, starting from the respective metals, metal nitrides, and silicon diimide. The crystal structure of Ce(7)Si(6)N(15) has been determined by using single-crystal X-ray diffraction. Besides ordered crystals 1 with a complicated triclinic superstructure and multiple twinning (P1, no. 2; a = 13.009(3), b = 25.483(5), c = 25.508(10) A; alpha = 117.35(3), beta = 99.59(3), gamma = 99.63(3) degrees; V = 7114(2) A(3); Z = 18; R1 = 0.0411), disordered crystals 2 with identical composition exhibiting a trigonal average structure (R3, no. 148) have also been observed (a = 43.420(6), c = 6.506(2) A; V = 10 623(3) A(3); Z = 27; R1 = 0.0309). Pr(7)Si(6)N(15) (3) and La(7)Si(6)N(15) (4) are isostructural with 1 as evidenced by twinned single-crystal data for 3 (P1, no. 2; a = 12.966(3), b = 25.449(10), c = 25.459(10) A; alpha = 117.28(3), beta = 99.70(4), gamma = 99.60(4) degrees; V = 7068(4) A(3); Z = 18; R1 = 0.0526) and powder diffraction data for 4 (P1, no. 2; a = 13.109(9), b = 25.606(18), c = 25.609(18) A; V = 7223(12) A(3); Z = 18; R(P) = 0.0194; R(F)(2) = 0.0936). The crystal structure of M(7)Si(6)N(15) (M = La, Ce, Pr) is built up exclusively of corner-sharing tetrahedrons that appear as Q(2)-, Q(3)-, and Q(4)-type tetrahedrons forming different ring sizes within a less condensed three-dimensional network. Among the characteristic structural motifs are saw-blade-shaped 12-rings and finite chains consisting of four corner-sharing SiN(4) tetrahedrons. High-resolution transmission electron micrographs indicate both ordered and disordered crystallites. In the diffraction patterns of disordered rhombohedral crystals, diffuse maxima appear in reciprocal space at those positions in which sharp superstructure reflections are found in the case of the respective ordered crystallites. Magnetic susceptibility measurements of Ce(7)Si(6)N(15) show paramagnetic behavior with an experimental magnetic moment of 2.29 mu(B) per Ce, thereby corroborating the existence of Ce(3+).

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“…The stoichiometry of amorphous silicon nitride can be expressed as Si 1−x N x :H y [24] and can also have the composition Si-N 4(1−x)/3 O 2x . Nitrogen and oxygen atoms are bonded to 3 and 2 silicon atoms, respectively [25]. The XPS peak of Si 2p can be decomposed into two contributions of the silicon in Si 3 N 4 and SiO 2 compounds.…”

Section: Amorphous Silicon Nitridementioning

confidence: 99%

“…Comparison of the intensity of Si 2p peaks which correspond to SiO 2 and Si 3 N 4 phases, suggests that thickness of the possibly superficial layer of silicon oxide does not exceed 0.8-1 nm. Moreover, it is possible that the oxygen detected by XPS belongs to the presence of Si-N 3 O tetrahedrons embedded on the surface of the structure of the ␣-Si 3 N 4 [25].…”

Section: ␣-Si 3 Nmentioning

confidence: 99%

Total oxidation of methane over Pd catalysts supported on silicon nitrideInfluence of support nature

Курзина¹,

Aires

Bergeret

et al. 2005

Chemical Engineering Journal

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A silicon-29 MAS–NMR study of α-silicon nitride and amorphous silicon oxynitride fibres

Cited by 27 publications

References 13 publications

Si3N4 Fibers Synthesized by Thermal Plasma CVD

Si3N4 Fibers Synthesized by Thermal Plasma CVD

Complex Interrupted Tetrahedral Frameworks in the Nitridosilicates M₇Si₆N₁₅ (M=La, Ce, Pr)

Total oxidation of methane over Pd catalysts supported on silicon nitrideInfluence of support nature

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A silicon-29 MAS–NMR study of α-silicon nitride and amorphous silicon oxynitride fibres

Cited by 27 publications

References 13 publications

Si3N4 Fibers Synthesized by Thermal Plasma CVD

Si3N4 Fibers Synthesized by Thermal Plasma CVD

Complex Interrupted Tetrahedral Frameworks in the Nitridosilicates M7Si6N15 (M=La, Ce, Pr)

Total oxidation of methane over Pd catalysts supported on silicon nitrideInfluence of support nature

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Complex Interrupted Tetrahedral Frameworks in the Nitridosilicates M₇Si₆N₁₅ (M=La, Ce, Pr)