A signal processing ASIC for ISFET-based chemical sensors

Chung, Wen-Yaw; Yang, Chen; Wang, Yaw-Feng; Chan, Y.F.J.; Torbicz, W.; Pijanowska, Dorota G.

doi:10.1016/j.mejo.2004.04.003

Cited by 20 publications

(18 citation statements)

References 6 publications

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“…25 Moreover, different ISFET fabrication technologies with integrated readout interfaces (e.g., constant current-voltage driver, calibration circuitry, electronics for drift and temperature compensation) have been realized using complementary metal-oxide-semiconductor (CMOS) processes. 10,26,27 However, to our knowledge, up to now no ISFET with integrated readout interface has been commercialized.…”

Section: Ph Isfetmentioning

confidence: 99%

Chemical and Biological Field‐Effect Sensors for Liquids—A Status Report

Poghossian

Schöning

2007

Handbook of Biosensors and Biochips

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Basic concepts, functional principles, and current trends in research and development of semiconductor‐based field‐effect chemical sensors and biosensors are described. The presented sensor devices summarize the following: ISFETs (ion‐sensitive field‐effect transistor), capacitive EIS (electrolyte‐insulator‐semiconductor) sensors and LAPS (light‐addressable potentiometric sensor) structures.

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Section: Ph Isfetmentioning

confidence: 99%

Chemical and Biological Field‐Effect Sensors for Liquids—A Status Report

Poghossian

Schöning

2007

Handbook of Biosensors and Biochips

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“…An electrochemical sensor, such as an ion-sensitive field-effect transistor (henceforth ISFET), plays an important role in the industry. Its broad application in environmental, agricultural, aquaculture, biomedical, pharmaceutical, food, and other industries makes it in demand and popular [1][2][3][4][5][6]. The ISFET is normally used for data acquisition and monitoring the potential of hydrogen (pH) levels [2,3,[6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…The calibration of an ISFET is done manually and where it is deployed. In such cases, an expert may be needed and a sequence of procedures should be followed [1]. The procedure of calibrating an ISFET includes the measurement of a known solution and of an unknown one [3,9].…”

Section: Introductionmentioning

confidence: 99%

“…The procedure of calibrating an ISFET includes the measurement of a known solution and of an unknown one [3,9]. The pH's equivalent voltage of a measured known solution is saved in the memory registers inside the system for reference during calibration [1,9]. Having an ISFET with built-in calibration registers will alleviate the work of experts in performing calibrations.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of an ISFET with Built-in Calibration Registers through Segmented Eight-Bit Binary Search in Three-Point Algorithm Using FPGA

Manlises

Cruz

Chung

et al. 2017

JLPEA

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Sensors play the most important role in observing changes in an environment they are a part. They detect even the smallest changes and send the information to other electronic devices. Making sure that these sensors provide an accurate output is equally crucial, as the data it measures and collects are used for analysis. Until now, calibrating sensors has been done manually by following a sequence of procedures, and is usually performed on-site or in a laboratory prior to deployment. To eliminate the manual procedure in the calibration (at the very least), an ion-sensitive field-effect transistor (ISFET) with a built-in calibration registers circuit was created through segmented eight-bit binary search in a three-point algorithm using a field-programmable gate array (FPGA). The circuit was created using a three-point calibration algorithm and three standard buffers (pH 4, pH 7, and pH 10). The block diagram, schematic diagram, and the number of logic gates were derived after synthesizing the Verilog program in Xilinx/FPGA. An average of 0.30% error was computed to prove the reliability of the created circuit using FPGA. Having an ISFET with built-in calibration registers will alleviate the work of experts in performing calibrations. This would follow the plug and play standard, hence its being a calibration-ready ISFET device. With this feature, it could be used as a pH level meter or a remote sensor node in several applications.

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“…Nas últimas décadas, muitos sensores químicos (não de silício) para detecção de átomos, moléculas e íons tem sido apresentados na literatura (SEIYAMA et al, 1983;HAGENMULLER, 1986;BERGVELD, 2003a;CHUNG et al, 2004 A equação de corrente do transistor na saturação para…”

Section: Organização Da Dissertaçãounclassified

Caracterização elétrica de dispositivos tipo ISFET com estrutura Si/SiO2/Si3N4 para medição de pH utilizando pseudoeletrodos de Pt, Ag e Au.

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A Deus, todo poderoso, pela proteção e saúde durante todo o período de estudo. Ao professor Sebastião Gomes dos Santos Filho pela orientação e atenção ao longo de todo o trabalho. Ao Laboratório de Sistemas Integráveis (LSI) pela estrutura, disponibilidade dos equipamentos utilizados no trabalho e aos técnicos pela ajuda durante o trabalho. Ao professor Marcelo Bariatto Andrade Fontes, sem o qual não teria iniciado o mestrado no estudo dos ISFETs. Ao professor João Antônio Martino pelas excelentes aulas nas disciplinas cursadas que foram decisivas para o desenvolvimento do trabalho e pelas ajudas e sugestões durante a qualificação. Ao professor Mario Ricardo Gongora Rubio pela ajuda e atenção prestadas durante a execução deste trabalho. A CAPES pelo apoio financeiro fornecido. Aos meus pais, Roberto e Maria Helena, que me deram apoio durante todo o trabalho e a toda a minha família. À minha namorada Natasha, pelo suporte emocional e inspiração ao longo de todo o mestrado. Aos amigos do LSI e da Fatec-SP pelas dicas e pelo companheirismo. A todos que, direta ou indiretamente, contribuíram com a realização deste trabalho. RESUMO Neste trabalho, foi realizado um estudo da caracterização elétrica dos ISFETs com estrutura Si/SiO 2 /Si 3 N 4 , utilizando pseudoeletrodos de Pt, Ag e Au como alternativas aos eletrodos convencionais para medições de pH. Primeiramente, foram empregados três métodos reportados na literatura (extrapolação linear para obtenção da tensão de limiar, segunda derivada para obtenção da tensão de limiar e corrente de sublimiar, respectivamente) com o objetivo de obter a sensibilidade dos ISFETs (mV/pH) e analisar a confiabilidade dos resultados utilizando eletrodo de referência padrão de Ag/AgCl. Posteriormente, tendo como base o eletrodo de Ag/AgCl, foram estudados os desempenhos de pseudoeletrodos de Pt, Ag e Au nas medidas de pH. Como resultado, observou-se que os pseudoeletrodos de Pt e Ag apresentaram sensibilidades compatíveis com o eletrodo de referência padrão de Ag/AgCl (~50mV/pH) para pH ácido na faixa de 1 a 3. Já o pseudoeletrodo de Au, manteve um comportamento aproximadamente linear ao longo de toda a faixa de pH estudada (1 a 10), porém, com sensibilidade inferior na faixa de 32 à 34mV/pH.

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A signal processing ASIC for ISFET-based chemical sensors

Cited by 20 publications

References 6 publications

Chemical and Biological Field‐Effect Sensors for Liquids—A Status Report

Chemical and Biological Field‐Effect Sensors for Liquids—A Status Report

Characterization of an ISFET with Built-in Calibration Registers through Segmented Eight-Bit Binary Search in Three-Point Algorithm Using FPGA

Caracterização elétrica de dispositivos tipo ISFET com estrutura Si/SiO2/Si3N4 para medição de pH utilizando pseudoeletrodos de Pt, Ag e Au.

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