A SiGe LC-ladder low noise amplifier with base resistance match, gain and noise flatness for UWB applications

Jing, Kai; Zhang, Yiqi; Li, Zhenrong; Zhao, Zhongfang; Nie, Lipeng

doi:10.1016/j.mejo.2014.03.020

Cited by 6 publications

(3 citation statements)

References 23 publications

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“…4(a). It is found that the SR560, whose bandwidth with a poor response at higher frequencies amplifier, produces 57.98 dB maximum voltage gains [9]. However, PAR113 amplifier produces 78.309 maximum voltage gains with narrow bandwidth, and Brookdeal 5003 is lower, whereas the proposed amplifier produces significantly enhanced maximum voltage gain of 80 dB with Fig.…”

Section: Experimental Characterizationmentioning

confidence: 88%

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Design of ultra low noise amplifier for noise measurement in inverter fault diagnosis

Chen

2015

IEICE Electron. Express

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Abstract:The design and realization of a novel simple fully differential input ultra low noise amplifier with compensation network for low frequency noise measurements in inverter fault diagnosis is presented. Special care is devoted to the solution of typical problems encountered in the design of low noise test equipment, such as amplifier background noise, and temperature fluctuations. The noise characteristics obtained are sensibly better than those of commercial amplifiers commonly adopted in low frequency noise measurements. Proposed amplifier may be useful for various analog circuit fault diagnosis using low frequency noise measurements technology.

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Section: Experimental Characterizationmentioning

confidence: 88%

“…We can measure the output voltage at the output end with the variations of temperature. The offset voltage U os can be calculated by the output voltage using the formula (11), which is similar to (9) and (10).…”

Section: Experimental Characterizationmentioning

confidence: 99%

Design of ultra low noise amplifier for noise measurement in inverter fault diagnosis

Chen

2015

IEICE Electron. Express

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“…The reasons of doing so are as follows: (1) Though the transistor transconductance is almost irrelevant of bipolar transistor size, from our previous study, however, noise contributed from base resistance in SiGe bipolar transistor dominates in the range from 2 to 16 GHz, and size of bipolar transistor should be carefully optimized. 11 (2) More capacitance at input node B will drive S 11 line down from the origin of Smith chart at high frequency, the parasitic capacitance of interconnect line and L 1 will contribute to this tendency. In this study, C in2 is 300 fF.…”

Section: Circuit and Input Matchmentioning

confidence: 99%

An S‐ to Ku‐wideband low‐noise amplifier using asymmetric π filter and shunt‐peaking technique with simultaneous input match and noise flatness

Jing

Qian³

2019

Micro & Optical Tech Letters

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A single-stage S to Ku band (2-18 GHz) low noise amplifier (LNA) employing asymmetric π input match network and inductive shunt-peaking technique in 0.18 μm SiGe BiCMOS is presented. Shunt-shunt feedback is utilized to ensure wide operating as well as form a noise suppression topology. With the process of SiGe heterojunction bipolar transistor (HBT) featuring f T /f max of 240/280 GHz, the measurement of the proposed LNA results in S 11 below −10 dB, S 21 of 19.6 AE 0.8 dB and 2.2-3.2 dB noise figure (NF) from 2 to 18 GHz, drawing 9 mA DC current from a 3.3 V supply. K E Y W O R D SBiCMOS, feedback, low noise amplifier (LNA), SiGe, wideband

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A 0.5 to 6 GHz wideband cascode LNA with enhanced linearity by employing resistive shunt‐shuntfeedback and derivative superposition

Wang

et al. 2020

Micro & Optical Tech Letters

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A wideband bipolar low‐noise amplifier (LNA) with enhanced linearity operating in 0.5 to 6 GHz frequency range is proposed in this letter. The LNA design is based on a cascode amplifier with an emitter degeneration RC parallel network and a resistive shunt‐shunt feedback which can improve linearity. The cascode topology in conjunction with the preceding series inductor L is utilized to achieve good wideband input impedance matching, while the wideband output impedance matching is realized by using an emitter follower as a buffer. And the third‐order input intercept point (IIP3) has been improved due to the derivative superposition technique. The wideband LNA presented in this letter was designed and implemented in a JAZZ 0.18 μm SiGe BiCMOS process. The measured results show that from 500 MHz to 6 GHz, the power gain (S21) is 16.5 to 17.1 dB, the noise factor (NF) is 2.7 to 3.3 dB, the current consumption without buffer stage is 12.4 mA at a 3.3 V supply voltage, and the IIP3 is −0.834 dBm at 2 GHz. The chip size is 1.06 × 0.64 mm2.

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A SiGe LC-ladder low noise amplifier with base resistance match, gain and noise flatness for UWB applications

Cited by 6 publications

References 23 publications

Design of ultra low noise amplifier for noise measurement in inverter fault diagnosis

Design of ultra low noise amplifier for noise measurement in inverter fault diagnosis

An S‐ to Ku‐wideband low‐noise amplifier using asymmetric π filter and shunt‐peaking technique with simultaneous input match and noise flatness

A 0.5 to 6 GHz wideband cascode LNA with enhanced linearity by employing resistive shunt‐shuntfeedback and derivative superposition

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