A SiC CMOS Digitally Controlled PWM Generator for High-Temperature Applications

Roy, Sajib; Murphree, Robert; Abbasi, Affan; Rahman, Ashfaqur; Ahmed, Shamim; Gattis, James Austin; Francis, A. Matthew; Holmes, Jim; Mantooth, H. Alan; Di, Jia

doi:10.1109/tie.2017.2694413

Cited by 23 publications

(4 citation statements)

References 29 publications

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“…A decade ago, Raytheon Systems Limited developed a proprietary 1.2 μm SiC CMOS technology, called high temperature silicon carbide (HiTSiC), and demonstrated integrated circuits [14], [15]. The group of Mantooth at the University of Arkansas demonstrated a comparator [16], 8-bit digitalto-analog converter (DAC) [17], voltage and current references [18], gate driver [19], complex digital circuits [20], protection circuits in voltage regulators and switch-mode converters [21], digitally controlled pulsewidth modulation (PWM) generator [22], and data converters [23]. However, the HiTSiC technology was discontinued in 2018.…”

Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a low-voltage SiC technology for integrated circuits is of paramount importance. Here, we report on a scalable and open state-of-the-art SiC CMOS technology that addresses this need. An overview of technology parameters, including MOSFET threshold voltage, subthreshold slope, slope factor, and process transconductance, is reported. Conventional integrated digital and analog circuits, ranging from inverters to a 2-bit analog-to-digital converter, are reported. First yield predictions for both analog and digital circuits show great potential for increasing the amount of integrated devices in future applications.

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Section: Integrated Digital and Analog Circuit Blocks In Amentioning

confidence: 99%

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Romijn

Vollebregt

Middelburg

et al. 2022

IEEE Trans. Electron Devices

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“…Digital control in dc-dc converters is of interest because its many potential advantages such as low power consumption and flexibility to program and design advanced control strategies to improve the system performance [1][2][3]. Therefore, the digital closed-loop configuration is increasingly being used in dc-dc converters [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

ADC Quantization Effects in Two-Loop Digital Current Controlled DC-DC Power Converters: Analysis and Design Guidelines

et al. 2020

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This paper analyzes the presence of undesired quantization-induced perturbations (QIP) in a dc-dc buck-boost converter using a two-loop digital current control. This work introduces design conditions regarding control laws gains and signal quantization to avoid the quantization effects due to the addition of the outer voltage loop in a digital current controlled converter. The two-loop controller is composed of a multisampled average current control (MACC) in the inner current-programmed loop and a proportional-integrator compensator at the external loop. QIP conditions have been evaluated through simulations and experiments using a digitally controlled pulse width modulation (DPWM) buck-boost converter. A 400 V 1.6 kW proof-of-concept converter has been used to illustrate the presence of QIP and verify the design conditions. The controller is programmed in a digital signal controller (DSC) TMS320F28377S with a DPWM with 8.96-bit equivalent resolution, a 12-bit ADC for current sampling, and a 12-bit ADC for voltage sampling or a 16-bit ADC for voltage error sampling.

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“…Silicon-carbide (SiC) is a promising semiconductor material for devices operating in high-radiation [1][2][3][4][5][6][7] and hightemperature [8][9][10][11][12][13] environments. In previous work, the authors fabricated a SiC operational amplifier (op-amp) based on 4H-SiC complementary MOS (CMOS) technology.…”

Section: Introductionmentioning

confidence: 99%

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

Masunaga

Crescitelli

Funaki

2020

Jpn. J. Appl. Phys.

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Long-term thermal stability of specific contact resistance (ρc) in cross-bridge kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni2Si/4H-SiC layered structure was studied. In hightemperature-storage tests at 500°C, ρc of p-type SiC increased after it decreased to 1/100 from its initial value; however, in high-temperature-storage tests at 300°C, it was stable up to 1000 hr. The initial decline of ρc was due to formation of titanium-silicide alloy, whose barrier height is lower than that of Ni2Si phase. It was found that ρc increased when the aluminum electrode disappeared because aluminum displaced silicon in the silicon-dioxide layer. In thermal-shock tests (-40°C/300°C), ρc hardly changed up to 2000 cycles, and that trend was constant regardless of SiC carrier type. In both tests, almost no thermal deterioration of ρc around 300°C was observed even in air, so it is concluded that the CBKR structure is robust enough for installation in a high-temperature environment such as a nuclear power plant under decommissioning.

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A SiC CMOS Digitally Controlled PWM Generator for High-Temperature Applications

Cited by 23 publications

References 29 publications

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

ADC Quantization Effects in Two-Loop Digital Current Controlled DC-DC Power Converters: Analysis and Design Guidelines

Long-term stability of nickel-based ohmic contacts with n-type and p-type 4H-SiC in a high-temperature environment

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