A Si-SiGe HBT dielectric-resonator-stabilized microstrip oscillator at X-band frequencies

Guttich, U.; Gruhle, A.; Luy, J.-F.

doi:10.1109/75.143395

Cited by 17 publications

(4 citation statements)

References 4 publications

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“…With these devices first hybrid VCO and DRO circuits up to 24 GHz were realized [7], [8], [9]. Although these results are promising, a cost-effective solution requires monolithic integration of the HBT into the circuit.…”

Section: Introductionmentioning

confidence: 99%

Microstrip and coplanar SiGe-MMIC oscillators

Beisswanger

Guttich²,

Rheinfelder

1996

26th European Microwave Conference, 1996

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We report on design, technology, and experimental results of microstrip and coplanar Si-SiGe HBT Ks-band oscillators integrated monolithically on high resistivity silicon. The tuning range of the microstrip VCO was 100 MHz around 22.8 GHz and the output power reached-7 dBm with a conversion efficiency of 1%. The coplanar LC oscillators reached output powers of up to I dBm with a conversion efficiency of 358 at 28.1 GHz and 37.8 GHz. This exceeds the requirements for subharmonic injection locking of transit-time diodes like IMPATT oscillators. With the availability of such HBT oscillators extremely compact and low-cost FMCW radar circuits for use in industrial and traffic sensor systems will become possible in the ISMbands 24 GHz (direct operation) and 76.5 GHz (by subharmonic injection locking).

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Section: Introductionmentioning

confidence: 99%

Microstrip and coplanar SiGe-MMIC oscillators

Beisswanger

Guttich²,

Rheinfelder

1996

26th European Microwave Conference, 1996

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“…In past, the oscillators using planar microstrip resonator were popular since they were of low cost. However, the phase noise of the microstrip oscillator was not significantly improved, due to the low unloaded quality factor (Q u ) of the microstrip resonator [1] opposite to the dielectric resonator (DR) with high Q u . Therefore, the dielectric resonator oscillator (DRO) having advantages of a high power handing capability and a temperature stability can satisfy the frequency stability and output power requirements of a vehicle RF module, used for special frequency bands [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…Because of this characteristic, this type of structure is sometimes called "artificial magnetic conductor" (AMC). One of the structures proposed for antenna surface wave suppression is the mushroom-like structure [1]. This structure consists of a lattice of metal plates, which are connected to a solid metal sheet by vertical conducting vias.…”

Section: Introductionmentioning

confidence: 99%

An RF module integrated with a dual‐band DRO oscillating at X‐ and K‐band simultaneously

Yang

Weng

Hung

et al. 2008

Micro & Optical Tech Letters

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In this article, a high quality vehicle RF module integrated with a temperature stable dual‐band dielectric resonator oscillator (DRO) oscillating at X‐ and K‐band simultaneously is implemented. The DRO shows the first oscillating frequency at 11.545 GHz and the second oscillating frequency at 23.09 GHz using the fundamental TE01 and enhanced TE02 mode of the dielectric resonator (DR), respectively. The used DR is (Zr, Sn)TiO4 ceramic with a dielectric constant (εr) of 36, a quality factor (Q×f) of 60,000 and a temperature coefficient of resonant frequency (τf) of ± 1 ppm/°C. The design procedure is clearly described in this article. The propagation mode behaviors and equivalent circuits of the DRO are used to predict the circuit performances of the RF module. For practical testing, the RF module combining with a horn antenna, the DRO and a surface‐mounted mixer is fabricated and measured. The results are close matched with the circuit simulation. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2961–2965, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23805

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“…The importance of millimeter-wave communications is increasing because high-speed communication is possible and the antennas and circuits can be miniaturized. In particular, the high-frequency oscillator used for the generation of high-frequency signals significantly affects the performance and economy of communications equipment, and circuits with good performance at low cost are needed [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

K-band subharmonic injection-locked push-push oscillator using double-sided MIC

Kawahata

Tanaka

Aikawa

2005

Electron. Comm. Jpn. Pt. II

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SUMMARYWith a view to improving the phase noise and frequency variation of a microwave oscillator, a subharmonic injection-locked push-push oscillator using double-sided circuit technology is proposed. The proposed oscillator is realized by placing a microstrip line on the surface of a dielectric substrate and a slot line on the back side. This paper discusses the in-phase input of a subharmonic injection-locking signal with a simple circuit configuration. A 20-GHz subharmonic injection-locked push-push oscillator is designed by this configuration method and fabricated. When 5 GHz is used for the subharmonic injection signal, the locking range is found to be 240 MHz at an injection power of +14.5 dBm. The phase noise is -114.1 dBc/Hz at 1-MHz offset.

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A Si-SiGe HBT dielectric-resonator-stabilized microstrip oscillator at X-band frequencies

Cited by 17 publications

References 4 publications

Microstrip and coplanar SiGe-MMIC oscillators

Microstrip and coplanar SiGe-MMIC oscillators

An RF module integrated with a dual‐band DRO oscillating at X‐ and K‐band simultaneously

K-band subharmonic injection-locked push-push oscillator using double-sided MIC

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