a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers

Theil, Jeremy A.; Snyder, R.D.; Hula, David; Lindahl, Kirk A.; Haddad, H.; Roland, Jim

doi:10.1016/s0022-3093(01)01144-9

Cited by 24 publications

(26 citation statements)

References 4 publications

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“…A vertical integration of the light sensor, by depositing the photo diode directly over the readout-electronics, may greatly improve the sensitivity [9]. This so-called thin-film on ASIC (TFA) technology -also called thin-film on CMOS (TFC) technology -has an interesting potential for high sensitivity, low level and/or high dynamic imaging [10,11]; this technology also allows for a geometrical fill-factor (ratio between the active area and the total sensor area) close to 100%.…”

Section: Introductionmentioning

confidence: 99%

Thin‐film silicon detectors for particle detection

Wyrsch

Dunand

Miazza

et al. 2004

phys. stat. sol. (c)

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PACS 29.40 Wk, 81.05 Gc, 85.60 Bt, Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 µm). Corresponding diodes were later directly deposited on CMOS readout chips. These integrated particle sensors have been characterized using light pulse illumination and beta particle irradiation from 63 Ni and 90 Sr sources. Direct detection of single lowand high-energy beta particles have been demonstrated. The application of this new integrated particle sensor concept for medical imaging is also discussed.

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Section: Introductionmentioning

confidence: 99%

Thin‐film silicon detectors for particle detection

Wyrsch

Dunand

Miazza

et al. 2004

phys. stat. sol. (c)

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“…In this example the photodiode is integrated within a pixel made with 3 CMOS transistors [4] represented in Figure 11.…”

Section: Photodiode Model Integration Within a Pixel Structurementioning

confidence: 99%

“…Those qualities, compatible with the CMOS 1 technology, position them as good candidates for the achievement of very high efficiency optical sensors [3,4]. Due to the complexity and the countless mechanisms which describe the behaviour of a pixel based on a p + -i-n + diode, our interest in the use of the p + -i-n + photodiode in sensor matrix applications involves the analysis and the optimisation of such devices by a complete simulation process.…”

Section: Introductionmentioning

confidence: 99%

A new p⁺-i-n⁺photodiode SPICE model for CMOS pixel applications

Negru

Bonnassieux

Tchakarov

et al. 2008

Eur. Phys. J. Appl. Phys.

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Abstract. In this paper we discuss and model the effects of the density of defects in hydrogenated amorphous silicon from an electronics point of view. To this end, we have created a SPICE model that accounts for the two main field effects, Poole-Frenkel and tunnel, responsible for the leakage current. The comparison between our model and the experimental data shows that our approach allows a quick evaluation of the quality of the device with no need to run a complete steady state measurement. Also, we have validated our SPICE photodiode model by implementing it into a three CMOS simple pixel structure.

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“…Vertical integration of light sensors by deposition of a hydrogenated amorphous silicon (a-Si:H) layer on a readout chip has recently gained a lot of attention [1][2][3]. This so-called thin-film on ASIC (TFA) or thin-film on CMOS (TFC) technology offers high integration level of the detecting device and the readout electronics.…”

Section: Introductionmentioning

confidence: 99%

A novel low noise hydrogenated amorphous silicon pixel detector

Moraes

Anelli

Despeisse

et al. 2004

Journal of Non-Crystalline Solids

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Firsts results on particle detection using a novel silicon pixel detector are presented. The sensor consists of an array of 48 square pixels with 380 lm pitch based on a n-i-p hydrogenated amorphous silicon (a-Si:H) film deposited on top of a VLSI chip. The deposition was performed by VHF-PECVD, which enables high rate deposition up to 2 nm/s. Direct particle detection using beta particles from 63 Ni and 90 Sr sources was performed.

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a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers

Cited by 24 publications

References 4 publications

Thin‐film silicon detectors for particle detection

Thin‐film silicon detectors for particle detection

A new p⁺-i-n⁺photodiode SPICE model for CMOS pixel applications

A novel low noise hydrogenated amorphous silicon pixel detector

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a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers

Cited by 24 publications

References 4 publications

Thin‐film silicon detectors for particle detection

Thin‐film silicon detectors for particle detection

A new p+-i-n+photodiode SPICE model for CMOS pixel applications

A novel low noise hydrogenated amorphous silicon pixel detector

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A new p⁺-i-n⁺photodiode SPICE model for CMOS pixel applications