A Sensitivity and Linearity Improvement of a 100-dB Dynamic Range CMOS Image Sensor Using a Lateral Overflow Integration Capacitor

Akahane, Nana; Sugawa, Shigetoshi; Adachi, Sadao; Mori, Toshiyuki; Ishiuchi, T.; Mizobuchi, Koichi

doi:10.1109/jssc.2006.870753

Cited by 117 publications

(37 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lateral overflow integration capacitor (LOFIC) pixel architecture was employed for a high conversion gain (CG) and a high FWC performance [28,29]. A wide dynamic range and high sensitivity linear response imaging are achieved with a single exposure by CMOS image sensor with LOFIC [28,29]. The image sensor chip was fabricated using the same process technology as the PDAs explained in the previous sub-section.…”

Section: Fabricated Pd Characteristicsmentioning

confidence: 99%

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Kuroda

Sugawa

2014

IEICE Electron. Express

View full text Add to dashboard Cite

Si image sensors with a wide spectral response range and a high robustness to ultraviolet light exposure based on flattened Si surface are described in this paper. A photodiode (PD) fabrication technology is developed to form a thin surface high concentration layer with steep dopant profile on flattened Si surface. Due to this, PDs with a wide spectral response ranging from 200 to 1000 nm is achieved with almost 100% internal quantum efficiency to ultraviolet light (UV-light) waveband. In addition, high robustness of light sensitivity and dark current toward UV-light exposure is obtained. The developed technology is applied to in-pixel buried PDs of photodiode arrays and a CMOS image sensor. The advanced performances of fabricated sensors are verified with experimental results.

show abstract

Section: Fabricated Pd Characteristicsmentioning

confidence: 99%

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Kuroda

Sugawa

2014

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…Oxidation of the surface of the bottom polysilicon electrode provides a very thin dielectric insulation layer, and, thus, high capacitance. Akahane, Sugawa et al combined the PIP capacitor with a conventional MOS capacitor to create a compact analogue storage unit with higher capacitance to develop wide dynamic range image sensors [36]. …”

Section: Cmos Image Sensor With Pixel-based Recordingmentioning

confidence: 99%

Toward One Giga Frames per Second — Evolution of in Situ Storage Image Sensors

Etoh

Son

Yamada

et al. 2013

Sensors

View full text Add to dashboard Cite

The ISIS is an ultra-fast image sensor with in-pixel storage. The evolution of the ISIS in the past and in the near future is reviewed and forecasted. To cover the storage area with a light shield, the conventional frontside illuminated ISIS has a limited fill factor. To achieve higher sensitivity, a BSI ISIS was developed. To avoid direct intrusion of light and migration of signal electrons to the storage area on the frontside, a cross-sectional sensor structure with thick pnpn layers was developed, and named “Tetratified structure”. By folding and looping in-pixel storage CCDs, an image signal accumulation sensor, ISAS, is proposed. The ISAS has a new function, the in-pixel signal accumulation, in addition to the ultra-high-speed imaging. To achieve much higher frame rate, a multi-collection-gate (MCG) BSI image sensor architecture is proposed. The photoreceptive area forms a honeycomb-like shape. Performance of a hexagonal CCD-type MCG BSI sensor is examined by simulations. The highest frame rate is theoretically more than 1Gfps. For the near future, a stacked hybrid CCD/CMOS MCG image sensor seems most promising. The associated problems are discussed. A fine TSV process is the key technology to realize the structure.

show abstract

“…The lateral overflow integration capacitor (LOFIC) approach is considered to be one of these solutions, with a high dynamic range of more than 100 dB having been demonstrated in a single exposure [13,14]. On the other hand, LOFIC needs a charge accumulation node outside the photodiode.…”

Section: Introductionmentioning

confidence: 99%

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process

Takayanagi¹,

Yoshimura²,

Mori³

et al. 2018

Sensors

View full text Add to dashboard Cite

To respond to the high demand for high dynamic range imaging suitable for moving objects with few artifacts, we have developed a single-exposure dynamic range image sensor by introducing a triple-gain pixel and a low noise dual-gain readout circuit. The developed 3 μm pixel is capable of having three conversion gains. Introducing a new split-pinned photodiode structure, linear full well reaches 40 ke−. Readout noise under the highest pixel gain condition is 1 e− with a low noise readout circuit. Merging two signals, one with high pixel gain and high analog gain, and the other with low pixel gain and low analog gain, a single exposure dynamic rage (SEHDR) signal is obtained. Using this technology, a 1/2.7”, 2M-pixel CMOS image sensor has been developed and characterized. The image sensor also employs an on-chip linearization function, yielding a 16-bit linear signal at 60 fps, and an intra-scene dynamic range of higher than 90 dB was successfully demonstrated. This SEHDR approach inherently mitigates the artifacts from moving objects or time-varying light sources that can appear in the multiple exposure high dynamic range (MEHDR) approach.

show abstract

A Sensitivity and Linearity Improvement of a 100-dB Dynamic Range CMOS Image Sensor Using a Lateral Overflow Integration Capacitor

Cited by 117 publications

References 10 publications

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Toward One Giga Frames per Second — Evolution of in Situ Storage Image Sensors

An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process

Contact Info

Product

Resources

About