A semiconductor physics based model for thermal characteristics in electronic electrolytic energy storage devices

Yamada, Hidenori; Yamada, Toshio

doi:10.1063/5.0036639

Cited by 3 publications

(3 citation statements)

References 27 publications

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“…The Vth of the MIS-HEMT with SiNx/SiON composite gate dielectric exhibited a negative shift of 0.5 V, whereas the Vth of the MIS-HEMT with SiNx only gate dielectric showed a negative shift of 0.62 V. The negative shift after the OFF-state stress indicates an electron releasing process from the traps to the 2DEG channel resulting in the recovery of the Vth [12]. To clarify the trapping and detrapping process causing the shift of the V th , the band diagrams of the MIS-HEMTs at the gate region are depicted in Figure 4 [30]. At thermal equilibrium, traps at the interface below the Fermi level are filled with electrons, whereas traps above the Fermi level are empty [19].…”

Section: Resultsmentioning

confidence: 99%

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Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

et al. 2022

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This study has demonstrated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si substrates with a SiNx/SiON composite gate dielectric. The threshold voltage shift in the devices was investigated. The MIS-HEMTs with the SiNx/SiON composite gate dielectric exhibited superior threshold voltage uniformity and small threshold voltage hysteresis than the reference device with SiNx only gate dielectric. The variation of the device threshold voltage was mainly related to trapping process by the interface states, as confirmed by band diagrams of MIS-HEMTs at different gate biases. Based on frequency-dependent capacitance measurements, interface state densities of the devices with the composite and single gate dielectrics were extracted, where the former showed much smaller interface state density. These results indicate that the SiNx/SiON composite gate dielectric can effectively improve the device performance of GaN-based MIS-HEMTs and contribute to the development of high-performance GaN electronic devices.

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Section: Resultsmentioning

confidence: 99%

“…To clarify the trapping and detrapping process causing the shift of the Vth, the band diagrams of the MIS-HEMTs at the gate region are depicted in Figure 4 [30]. At thermal equilibrium, traps at the interface below the Fermi level are filled with electrons, whereas traps above the Fermi level are empty [19].…”

Section: Resultsmentioning

confidence: 99%

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

et al. 2022

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“…However, in the illuminated condition, the Fermi level splitting occurs, and EFn is raised while EFp is lowered. This results in more electrons and holes being excited in the i-Ge region [28,29]. Finally, the generated electrons are accelerated in the i-Si multiplication region under high reverse voltage conditions.…”

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confidence: 99%

Ge-on-Si Avalanche Photodiodes With Photon-Trapping Nanostructures for Sensing and Optical Quantum Applications

Zhou

et al. 2024

IEEE Sensors J.

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High-sensitivity Ge/Si avalanche photodiodes (APDs) have recently gained attention for their application in sensing and optical communication due to their low cost and CMOS compatible process. However, compared to commercial III-V compound APDs, Ge/Si APDs usually suffer from the issue of relatively low primary responsivity. In this paper, we report Ge-on-Si separate absorption, charge, and multiplication avalanche photodiodes (SACM-APDs) with photon-trapping nanostructures to enhance light absorption. Besides, by optimizing the depth of the holes, the photon trapping structure could reduce the dark current without compromising the avalanche effect as confirmed by both simulations and experimental results. As a result, the responsivity of the photon trapping APDs increases by 20-50 % from that of control APDs at the 1,550 nm wavelength band. Furthermore, a quantum efficiency higher than 80% could be achieved at 1550 nm when the photon trapping Ge-on-Si APD is on Si-on-insulator (SOI) platforms as predicted by simulations. Our results demonstrate that the photon trapping Ge/Si APDs exhibit superior dark current, light absorption and gain than those of the control devices, which have the potential applications in sensing and optical quantum communications.

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Skin effect suppression for millimeter-wave frequencies through manipulation of permeability

Yamada

2023

Eng. Res. Express

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A new device strategy for suppressing unwanted skin effect in coplanar transmission lines at frequencies beyond 20 GHz is presented. Utilization of the anti-resonance point as a source of imaginary permeability to suppress the skin effect is proposed. This idea is backed up by Kramers-Kronig and published experiments. The principle is independent of Landau-Lifshitz-Gilbert magnetic precession damping. The present work contributes both a greater understanding of skin effect manipulation and a method for obtaining zero skin effect using known laminate materials.

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A semiconductor physics based model for thermal characteristics in electronic electrolytic energy storage devices

Cited by 3 publications

References 27 publications

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Ge-on-Si Avalanche Photodiodes With Photon-Trapping Nanostructures for Sensing and Optical Quantum Applications

Skin effect suppression for millimeter-wave frequencies through manipulation of permeability

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