A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm

Maiti, Rishi; Hemnani, Rohit; Amin, Rubab; Ma, Zhizhen; Tahersima, Mohammad H.; Empante, Tom A.; Dalir, Hamed; Agarwal, Ritesh; Bartels, Ludwig; Sorger, Volker J.

doi:10.1515/nanoph-2018-0197

Cited by 30 publications

(16 citation statements)

References 38 publications

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“…The Y-junctions used fair an average insertion loss of 0.28 ± 0.02 dB each 48 . Previously we found similar TM grating coupler losses to be 8 dB/coupler on the same SOI platform 49 . Neglecting the fabrication variation that might arise from separate multi project runs, we can roughly estimate the waveguide bending losses as 0.6 dB/bend from our structure with all bending radii of 60 μm maintained constant throughout the design (i.e.…”

Section: Introductionsupporting

confidence: 59%

Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI

Amin

Maiti

Gui

et al. 2021

Sci Rep

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Densely integrated active photonics is key for next generation on-chip networks for addressing both footprint and energy budget concerns. However, the weak light-matter interaction in traditional active Silicon optoelectronics mandates rather sizable device lengths. The ideal active material choice should avail high index modulation while being easily integrated into Silicon photonics platforms. Indium tin oxide (ITO) offers such functionalities and has shown promising modulation capacity recently. Interestingly, the nanometer-thin unity-strong index modulation of ITO synergistically combines the high group-index in hybrid plasmonic with nanoscale optical modes. Following this design paradigm, here, we demonstrate a spectrally broadband, GHz-fast Mach–Zehnder interferometric modulator, exhibiting a high efficiency signified by a miniscule VπL of 95 V μm, deploying a one-micrometer compact electrostatically tunable plasmonic phase-shifter, based on heterogeneously integrated ITO thin films into silicon photonics. Furthermore we show, that this device paradigm enables spectrally broadband operation across the entire telecommunication near infrared C-band. Such sub-wavelength short efficient and fast modulators monolithically integrated into Silicon platform open up new possibilities for high-density photonic circuitry, which is critical for high interconnect density of photonic neural networks or applications in GHz-fast optical phased-arrays, for example.

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Section: Introductionsupporting

confidence: 59%

Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI

Amin

Maiti

Gui

et al. 2021

Sci Rep

Self Cite

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“…The spectral response of the MRR integrated device was measured using a broadband laser (AEDFA-PA-30-B-FA) injected into the grating coupler optimized for the TM mode propagation [46]. The light output from the MRR was coupled to the output fiber and detected by the optical spectral analyzer (OSA202) [47]. The experimental setup for measuring the photodetector devices is shown in Fig.…”

Section: Device Measurementmentioning

confidence: 99%

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

et al. 2020

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In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologicallyrelevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide (TMDCs) materials due to their large optical bandgap. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550 nm on silicon micro ring resonator enabled by strain engineering of the transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2, resulting in large photo-response in the telecommunication wavelength, in otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz 0.5 . Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.

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“…We therefore emphasize the role of using integrated photonic devices for material characterization. 48,49 In Fig. 8a we show an example of the optical loss in MoS2 measured by integration in a micro-ring resonator.…”

Section: Using Integrated Photonic Devices For Materials Characteriza...mentioning

confidence: 99%

Refractive Uses of Layered and Two-Dimensional Materials for Integrated Photonics

Singh

et al. 2020

ACS Photonics

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The scientific community has witnessed tremendous expansion of research on layered (i.e. two-dimensional, 2D) materials, with increasing recent focus on applications to photonics. Layered materials are particularly exciting for manipulating light in the confined geometry of photonic integrated circuits, where key material properties include strong and controllable lightmatter interaction, and limited optical loss. Layered materials feature tunable optical properties, phases that are promising for electro-optics, and a panoply of polymorphs that suggest a rich design space for highly-nonperturbative photonic integrated devices based on phase-change functionality. All of these features are manifest in materials with band gap above the photonics-relevant nearinfrared (NIR) spectral band (~ 0.5 -1 eV), meaning that they can be harnessed in refractive (i.e. non-absorptive) applications.

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A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm

Cited by 30 publications

References 38 publications

Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI

Heterogeneously integrated ITO plasmonic Mach–Zehnder interferometric modulator on SOI

Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits

Refractive Uses of Layered and Two-Dimensional Materials for Integrated Photonics

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