A Self-Rectifying Resistive Switching Device Based on HfO<sub>2</sub>/TaO&lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;$_{{x}}$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt; Bilayer Structure

Ma, Haili; Zhang, Xumeng; Wu, Facai; Luo, Qing; Gong, Tiancheng; Yuan, Peng; Xu, Xiaoxin; Liu, Yu; Zhao, Siqi; Zhang, Kaiping; Lü, Cheng; Zhang, Peiwen; Feng, Jiangshan; Lv, Hangbing; Liu, Ming

doi:10.1109/ted.2018.2883192

Cited by 27 publications

(23 citation statements)

References 19 publications

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“…As shown in Figure 4a,c, Hf 4f core levels of HfO 2 thin films layers in all cases were deconvoluted into two Gaussian peaks (16.7 eV for Hf 4f5/2 and 18.3 eV for Hf 4f7/2, indicated by the red line and green line, respectively) [27,28,29]. Figure 4b,d shows XPS spectra of the O 1 s core levels of the HfO 2 thin films layers in all cases.…”

Section: Resultsmentioning

confidence: 99%

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

et al. 2019

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The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially flexible HfO2 films. A novel flexible Au/HfO2/Pt/mica resistive random access memory device was prepared by a sol-gel process, and a Au/HfO2/Pt/Ti/SiO2/Si (100) device was also prepared for comparison. The HfO2 thin films were grown into the monoclinic phase by the proper annealing process at 700 °C, demonstrated by grazing-incidence X-ray diffraction patterns. The ratio of high/low resistance (off/on) reached 1000 and 50 for the two devices, respectively, being relatively stable for the former but not for the latter. The great difference in ratios for the two devices may have been caused by different concentrations of the oxygen defect obtained by the X-ray photoelectron spectroscopy spectra indicating composition and chemical state of the HfO2 thin films. The conduction mechanism was dominated by Ohm’s law in the low resistance state, while in high resistance state, Ohmic conduction, space charge limited conduction (SCLC), and trap-filled SCLC conducted together.

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Section: Resultsmentioning

confidence: 99%

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

et al. 2019

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“…[23,24] V o reveals themselves as carriers. [6,7] Considering the specific form of SCLC conductivity shown earlier, we propose that these traps have exponential energy distribution. [15] As the negative voltage applied to Ta TE increases (during 0 V!À3 V voltage sweep), the carrier injection becomes higher and starts to fill the traps, providing a high TFL slope of log|V| versus log|I| dependency.…”

Section: Resultsmentioning

confidence: 93%

“…However, this approach is unsuitable for promising memory implementations such as vertical ReRAM. [6,7] Recently, new studies on the development of transition metal oxide devices with nonfilamentary (homogeneous) switching mechanisms aimed at solving these problems have been conducted. [8,9] In addition to avoidance of the electroforming step, these devices usually exhibit the self-rectifying behavior, i.e., the high ratio of LRS currents in opposite read voltage polarities (rectification ratio [RR]), which can solve the "sneak" current problem.…”

Section: Introductionmentioning

confidence: 99%

“…Self-rectifying RS behavior was discovered in several studies investigating HfO 2 /TaO x , TiO 2 /TaO x , Nb 2 O 5 /TiO x /Nb 2 O 5 multilayer-based devices. [6,[9][10][11] The reported RR was %10 3 . Although for a significantly large CBA, the RR has to be as high as %10 6 , [12] parallelization of the arrays into %10 3 -10 4 separate blocks also makes the %10 3 -10 4 RR promising.…”

Section: Introductionmentioning

confidence: 99%

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Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta₂O₅/Ta and TiN/HfO₂/Ta₂O₅/Ta Stacks

Kuzmichev

Chernikova

Kozodaev

et al. 2020

Physica Status Solidi (a)

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Herein, Ta2O5/Ta interface‐based TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta resistance switched (RS) stacks are investigated. The stacks reveal area‐dependent RS behavior indicating nonfilamentary (homogeneous) current transport. The nonfilamentary nature of the stacks provides high reproducibility of current–voltage hysteresis loops and the absence of electroforming. It is demonstrated that the nature of the current hysteresis in single Ta2O5‐based stacks obeys space‐charge‐limited conduction, and the space charge responsible for this behavior is formed by filled/emptied traps at the Ta/Ta2O5 interface. Due to the high potential barrier at the TiN/HfO2 interface, as measured using X‐ray photoelectron spectroscopy, sufficiently thick HfO2 (≈4 nm) blocks the trapping/detrapping process, thereby reducing the current hysteresis. The evaluated current mechanism results in a high rectification ratio of the TiN/Ta2O5/Ta device of ≈1.6 × 104. However, relatively short retention is inherent to the observed switching mechanism.

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“…In this regard, the recently demonstrated nonfilamentary (homogeneous) RS in TaO x ‐based RS stacks is of great interest since it is characterized by relatively low and area‐dependent current and electroforming‐free behavior, which are highly preferable for the 3D crossbar integration. [ 10 ] The trapping–detrapping processes in ion‐sputtered oxygen‐deficient TaO x were reported previously to cause the homogeneous RS in bilayer structures, such as TaO x /HfO 2 [ 13 ] and Ta 2 O 5− x /TaO 2− y . [ 14 ]…”

Section: Introductionmentioning

confidence: 99%

Charge Transport Mechanism in Atomic Layer Deposited Oxygen‐Deficient TaO_x Films

Gismatulin

Gritsenko

Перевалов

et al. 2020

Physica Status Solidi (b)

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TaOx is a promising candidate for random access memory formation. To provide the possibility of 3D integration, it is grown by the atomic layer deposition (ALD). Herein, such properties of the pristine TaOx grown by radical‐enhanced ALD (REALD) as oxygen vacancies concentration and the trap energy are evaluated to reveal whether it can replace more common ion‐sputtered TaOx both in filamentary and nonfilamentary resistive random access memory (ReRAM) stacks. For this purpose, charge transport mechanism in the TiN/TaOx/Pt stacks is analyzed. It is found that charge transport through TaOx is described by the phonon‐assisted tunneling between traps model. The thermal Wt = 0.85 eV and optical Wopt = 1.7 eV trap energies are determined. The trap concentration N = 1 × 1021 cm−3 found from transport corresponds well with the oxygen vacancy concentration, obtained by ab initio simulation of valence band X‐ray photoelectron spectrum. Derived parameters are typical for the ion‐sputtered TaOx. As a result, it can be considered to replace ion‐sputtered TaOx in the nonfilamentary bilayer stacks. Moreover, the observed properties explain the possibility to achieve electroforming‐free resistive switching in a single layer REALD grown TaOx‐based stack in combination with extracting Ta electrode.

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A Self-Rectifying Resistive Switching Device Based on HfO₂/TaO<inline-formula> <tex-math notation="LaTeX">$_{{x}}$ </tex-math> </inline-formula> Bilayer Structure

Cited by 27 publications

References 19 publications

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta₂O₅/Ta and TiN/HfO₂/Ta₂O₅/Ta Stacks

Charge Transport Mechanism in Atomic Layer Deposited Oxygen‐Deficient TaO_x Films

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A Self-Rectifying Resistive Switching Device Based on HfO2/TaO<inline-formula> <tex-math notation="LaTeX">$_{{x}}$ </tex-math> </inline-formula> Bilayer Structure

Cited by 27 publications

References 19 publications

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta2O5/Ta and TiN/HfO2/Ta2O5/Ta Stacks

Charge Transport Mechanism in Atomic Layer Deposited Oxygen‐Deficient TaOx Films

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Product

Resources

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A Self-Rectifying Resistive Switching Device Based on HfO₂/TaO<inline-formula> <tex-math notation="LaTeX">$_{{x}}$ </tex-math> </inline-formula> Bilayer Structure

Resistance Switching Peculiarities in Nonfilamentary Self‐Rectified TiN/Ta₂O₅/Ta and TiN/HfO₂/Ta₂O₅/Ta Stacks

Charge Transport Mechanism in Atomic Layer Deposited Oxygen‐Deficient TaO_x Films