Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process

Abstract

The resistive switching (RS) characteristics of flexible films deposited on mica substrates have rarely been reported upon, especially flexible HfO2 films. A novel flexible Au/HfO2/Pt/mica resistive random access memory device was prepared by a sol-gel process, and a Au/HfO2/Pt/Ti/SiO2/Si (100) device was also prepared for comparison. The HfO2 thin films were grown into the monoclinic phase by the proper annealing process at 700 °C, demonstrated by grazing-incidence X-ray diffraction patterns. The ratio of high/low resistance (off/on) reached 1000 and 50 for the two devices, respectively, being relatively stable for the former but not for the latter. The great difference in ratios for the two devices may have been caused by different concentrations of the oxygen defect obtained by the X-ray photoelectron spectroscopy spectra indicating composition and chemical state of the HfO2 thin films. The conduction mechanism was dominated by Ohm’s law in the low resistance state, while in high resistance state, Ohmic conduction, space charge limited conduction (SCLC), and trap-filled SCLC conducted together.

Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

“…RRAMs based on various materials, including metal oxides [5,6], novel nanomaterials [7][8][9], and organics [10,11], have been proposed. Among them, RRAM based on hafnium oxide [12][13][14][15], which replaced SiO 2 as the gate dielectric of choice below the 45 nm node [16,17], has been widely studied due to its high switching stability. There are still many challenges to overcome before RRAMs can be used as commercial memory, such as switching uniformity, overshoot current during forming or set process, leakage current in integrated arrays, and so on [4,18].…”

Memristive Non-Volatile Memory Based on Graphene Materials

“…Apart from the performance measurement of devices under development, FoM comparisons with other state-of-the-art market products are also considered. In general, the FoM assessment of NVM devices commonly focuses on basic characteristics in terms of operation speed, reliability, power consumption, scalability, and cost (Table 3) [15,[79][80][81][82][83][84][85][86][87][88][89]. Price ($/GB) <100k~10~1~1k~100k~100 10k…”

“…Write endurance is the quantized behavior of the anti-fatigue-degradation characteristic of a single NVM device, which is determined as the highest number of write/erase cycles that can be operated before the NVM cell fails to be reliable. The endurance also demonstrates the number of sustained cycles of the device before reaching the breakdown state [15,85]. Data retention refers to the amount of time for which the information can be sustained within the NVM cell, which demonstrates the sustained time during which the device can keep the internal resistance states without external power [86,87].…”

Tailoring the Anodic Hafnium Oxide Morphology Using Different Organic Solvent Electrolytes

“…Hafnium oxide (HfO 2 ) with its high thermal, chemical and mechanical stability, as well as its high refractive index and dielectric constant is remarkably appealing for new nanostructure architectures like nanoporous or nanotube (NT) arrays and a large range of applications [5][6][7][8][9][10][11][12]. Having into account the emerging application of anodic TiO 2 nanotubes in DSCs, the question arises about the applicability of self-ordered arrays of anodic HfO 2 for the same purpose.…”