A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

Huang, Chun‐Ying; Huang, Chien-Pei; Chen, Hung; Pai, Sheng-Wei; Wang, Ping-Ju; He, Xin-Rong; Chen, Jincheng

doi:10.1016/j.vacuum.2020.109619

Cited by 33 publications

(16 citation statements)

References 52 publications

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“…Combined with the energy band structure analysis, since the light is incident from the CuI side, and the CuI has a remarkable ability to absorb ultraviolet irradiation, we propose that CuI plays a more important role in the conversion of optical signals. At the same time, besides the conventional conduction mechanisms, there are also several pathways for photoelectric conversion based on amorphous oxides: − (1) molecule O 2 is often adsorbed at the interface of the two materials as negatively charged O 2– . Under illumination, the photogenerated holes will neutralize the oxygen ions, and numerous free electrons will be left at the interface, resulting in a considerate photogenerated current.…”

Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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For traditional wide-bandgap semiconductor materials, a high-temperature process is unavoidable for improving crystallization quality, so the substrate of the device is greatly limited. In this work, zinc–tin oxide (a-ZTO) amorphous oxide processed by the pulsed laser deposition method was utilized as the n-type layer, which exhibits considerable electron mobility and optical transparency, and can be deposited at room temperature. At the same time, by combining p-type CuI grown by the thermal evaporation method, a vertically structured ultraviolet photodetector based on CuI/ZTO heterojunction was obtained. The detector demonstrates self-powered properties, with an on–off ratio exceeding 104, and rapid response with a rise time of 2.36 ms and a fall time of 1.49 ms. Also, the photodetector shows long-term stability with 92% retention after 5000 s cyclic lighting and maintains reproducible response in frequency dependence measurement. Furthermore, the flexible photodetector on poly(ethylene terephthalate) (PET) substrates was constructed, exhibiting fast response and durability in the bending state. This is the first time that the heterostructure based on CuI has been applied in the flexible photodetector. The excellent results indicate that the combination of amorphous oxide and CuI has the potential for ultraviolet photodetectors, and will broaden the application range of high-performance flexible/transparent optoelectronic devices in the future.

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Section: Resultsmentioning

confidence: 99%

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Liu

Zhang

Shen

et al. 2023

ACS Appl. Mater. Interfaces

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“…ZnO is an essential element in the conversion of optical signals because of its capacity to absorb UV energy. Amorphous oxides and ubiquitous conduction processes are further methods for photoelectric conversion. , At the interface between the two materials, the O 2 molecule typically becomes adsorbed and acquires the negative charge of O 2 – . When exposed to light, the oxygen ion’s negative charge will be balanced by the holes produced by the photons, creating a considerable buildup of free electrons at the interface.…”

Section: Resultsmentioning

confidence: 99%

Self-Powered ZTO/ZnO Nanowire-Based Photodetectors with Ultrahigh Photosensitivity for Advanced UV Sensing

Selvaraj,

Chen,

Cheng

et al. 2023

ACS Appl. Nano Mater.

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High-performance photodetectors are crucial to developing cutting-edge technologies in many disciplines, such as medicine, optical communication, display and imaging, military, environmental monitoring, security checks, scientific research, and industrial process control. Field-effect phototransistors (FETs) using an amorphous oxide semiconductor, zinc−tin oxide (ZTO), show great potential as next-generation photodetectors. Regrettably, typical ZTO-based FETs have drawbacks preventing their widespread adoption in commercial applications, including reduced photosensitivity, slow reaction time, and insufficient mechanical flexibility. Here, ZnO nanowire (NW) growth on ZTO-based FETs for a superior photosensitive self-powered photodetector was studied for the first time. Initially, the ZTO-based photodetector was illuminated under 550 μW/cm 2 ultraviolet (UV) intensities, which exhibit sensitivity (responsivity) of 7.33 (0.21 AW −1 ) and 1.34 (0.66 AW −1 ) under atmosphere and vacuum environments, respectively. The excess oxygen ions in the atmosphere significantly boost photosensitivity compared to that in a vacuum environment. Furthermore, ZTO/ZnO NWs-based FETs were illuminated under 106 μW/cm 2 UV intensities, thus exhibiting excellent sensitivity (responsivity) of 8.67 × 10 4 (160.79 AW −1 ) under an atmosphere environment. Moreover, our device is a promising candidate for UV detection under weak UV illumination. Additionally, the superior charge carrier transport and mobility of ZnO NWs lower the recombination rate of photogenerated charge carriers and extend the lifespan of free charge carriers in photodetectors. Highly sensitive photodetectors based on ZTO/ZnO NW transistors are expected to have critical applications in various forefront domain fields, including bio-, flexible, wearable, transparent electronics and neuromorphic synaptic applications.

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“…The results are shown in figures 4(a) to (d). All of the peaks are calibrated using the C 1s reference at 284.8 eV to compensate for any charge-induced shifts [13]. The core spectrum for the Sn 3d 5/2 that is centered at 485.4 eV is attributed to the Sn-O bond, as shown in figure 4(a) [17].…”

Section: Resultsmentioning

confidence: 99%

“…AOSs are also used to fabricate UV PDs. Various AOS-based UV PD structures have been reported, such as phototransistors, p-n junction photodiodes, and metal-semiconductor-metal (MSM)-type PDs [13][14][15][16]. A MSM-type PD is the simplest structure for light detection because it is easily integrated and features no ohmic contact and a low parasitic capacitance so it suited to mass production [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors

Lin

Huang

Lou

et al. 2021

J. Phys. D: Appl. Phys.

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The electrical performance of thin-film transistors that use an amorphous oxide semiconductor (AOS) is significantly improved by incorporating metal cations as carrier suppressors. However, the effect of these elements on the performance of AOS-based photodetectors (PDs) is still unknown. This study uses a precursor containing lithium (Li) element and a sol-gel process to produce a Li-doped amorphous ZnSnO (a-ZTO) thin-film for UV PD applications. The results of x-ray photoelectron spectroscopy analysis show that the number of oxygen vacancies (V o) in a-ZTO thin-films decreases significantly from ∼32.1% to ∼14.4% after Li-doping (3 at%). The dark current decreases and the photocurrent increases in the ZTO-based PD so an ultra-high photo-to-dark current ratio (PDCR) of 1185 is achieved. The significant increase in PDCR means that solution-processed a-ZTO are eminently suited to use in UV PDs that use In-free AOSs.

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A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

Cited by 33 publications

References 52 publications

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Self-Powered Flexible Ultraviolet Photodetectors Based on CuI/a-ZTO Heterojunction Processed at Room Temperature

Self-Powered ZTO/ZnO Nanowire-Based Photodetectors with Ultrahigh Photosensitivity for Advanced UV Sensing

Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors

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