A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes

Bellone, Salvatore; Albanese, Loredana Freda; Licciardo, Gian Domenico

doi:10.1109/ted.2009.2032743

Cited by 17 publications

(5 citation statements)

References 18 publications

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“…In particular, a post implantation process carrier lifetime reference value of 15 ns has been experimentally measured at room temperature by reverse recovery. This value has been confirmed performing open-circuit voltage decay (OCVD) measurements on the same sample devices [10]. Finally, in terms of the carrier lifetimes temperature dependence, the experimental data observed in [9] in the 298-523 K temperature range agree well with the results calculated through the semi-empirical formula proposed in [4] using the 4H-SiC temperature coefficient of 1.72 reported in [5].…”

Section: Design and Simulationsupporting

confidence: 82%

Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics

Pezzimenti

Corte

2012

CAS 2012 (International Semiconductor Conference)

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Steady-state and switching characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) are investigated in a wide range of temperatures by means of an intensive simulation analysis useful for a first time ever realization of this device in SiC. An output drain current density up to 500 A/cm 2 , an high current gain and an on-resistance as low as 2 mΩ·cm 2 , are calculated when the gate regions are forward biased. The turn-off delay is in the order of 5 ns and the blocking voltage is higher than 1.2 kV. This study is supported by experimental data on the gate-drain and gate-source p-i-n diodes embedded in the BMFET structure.

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Section: Design and Simulationsupporting

confidence: 82%

Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics

Pezzimenti

Corte

2012

CAS 2012 (International Semiconductor Conference)

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“…Computer-aided analysis of the OCVD transient (as suggested in Ref. 10) yielded results that were higher than the lPCD measured values.…”

Section: Introductionmentioning

confidence: 85%

“…The method used to evaluate the minority carrier lifetime was similar to the method employed in Ref. 10. Digitized oscilloscope data were smoothed using the Wolfram Mathematica software package with a moving average function, then the function…”

Section: Electrical Measurementmentioning

confidence: 99%

“…While this effect alone would prevent accurate measurement of lifetimes, the loss of carriers due to emitter recombination can be balanced either by diffusion of carriers from the drift to the junction, 10,12 or by the formation of a potential barrier due to rapid recombination of carriers at the junction interface due to the presence of a thin damaged region. 11 lPCD, on the other hand, can be influenced by surface recombination if carriers diffuse from the emitter/drift boundary to the surface: as the entire carrier density is measured by the lPCD technique, any loss of carriers due to the enhanced recombination rate in the emitter will result in a decrease in the measured reflected radiofrequency (RF) power.…”

Section: Electrical Measurementmentioning

confidence: 99%

“…Unlike the OCVD measurement, which can be independent of the emitter characteristics for appropriately chosen experimental conditions, 10 the lPCD measurement depends on the total excited carrier concentration present in the epilayer, and can be influenced by the removal of carriers by recombination at the wafer surface as well as the substrate/epilayer interface. The simulations conducted showed that this effect could account for the differences observed between the lPCD and OCVD measurements.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

Brunt

Agarwal

Burk

et al. 2013

Journal of Elec Materi

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This work compares the optical microwave photoconductivity decay (lPCD) and electrical open-circuit voltage decay (OCVD) techniques for measuring the ambipolar carrier lifetime in 4H-silicon carbide (4H-SiC) epitaxial layers. Lifetime measurements were carried out by fabricating P + /intrinsic/N + (PiN) diodes on 100-lm-thick, 1 9 10 14 cm À3 to 4.5 9 10 14 cm À3 doped N-type 4 H-SiC epilayers, and measuring the lifetime optically using lPCD prior to metallization, then electrically using OCVD after contact deposition. Both as-grown epilayers as well as epilayers with improved lifetime (via thermal oxidation) were measured using both techniques. The observed ambipolar lifetime was improved from 1.4 ls on an unenhanced wafer to 4 ls on a wafer enhanced through the oxidation process as measured by lPCD. Little difference was observed between the lPCD and OCVD measurements on the unenhanced wafer; the ambipolar lifetime on the enhanced wafer measured by OCVD was approximately 5.5 ls, or 1.5 ls higher than the lPCD measurement. Continuous evaluation of the OCVD transient waveform was necessary due to the high lifetime in the enhanced wafer; shunt resistances included to discharge the P + /N junction capacitance were found to damp the OCVD response and yield low values for the measured lifetime. Simulation of the lPCD measurement including various surface recombination conditions yielded a good match to experimentally observed lPCD measurements for high values of the surface recombination velocity. The OCVD lifetime measurement technique is expected to yield measured lifetime values closer to the physical value due to its independence from surface conditions, provided that the experimental conditions are appropriately chosen.

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Numerical analysis of reverse recovery characteristics of 4H-SiC p+–n−–n+ power diode with injection conditions

Wei

Zhao

2014

Appl. Phys. A

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A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes

Cited by 17 publications

References 18 publications

Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics

Static and transient analysis of a 4H-SiC trench Bipolar Mode FET with normally-off characteristics

A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers

Numerical analysis of reverse recovery characteristics of 4H-SiC p+–n−–n+ power diode with injection conditions

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