A scanning tunneling microscopy study of dysprosium silicide nanowire growth on Si(001)

Liu, B. Z.; Nogami, J.

doi:10.1063/1.1516621

Cited by 83 publications

(84 citation statements)

References 48 publications

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“…2. It is known that RE deposition promotes step movement and flattening of the Si substrate especially in the vicinity of the silicide wires [19,34,41]; thus step bunches are out of the scan range of the STM micrograph. As it is obvious from the insets in Fig.…”

Section: Growth and Structure Of Wiresmentioning

confidence: 99%

Atomic size effects studied by transport in single silicide nanowires

et al. 2016

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Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi 2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

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Section: Growth and Structure Of Wiresmentioning

confidence: 99%

Atomic size effects studied by transport in single silicide nanowires

et al. 2016

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“…The image and cross-sectional line profile can be rationalized by considering the epitaxial relationship between the hexagonal AlB 2 -type structure ( Fig. 2A) of the bulk silicide and the Si(001) substrate, as observed for the rareearth silicide wires (9)(10)(11)(12)(13). In this scenario, the AlB 2 -type structure grows in the (1100) plane orientation with its [1120] direction aligned parallel to one of the < 110 > axes of the Si(001) substrate (Fig.…”

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confidence: 99%

Charge-order fluctuations in one-dimensional silicides

et al. 2008

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Metallic nanowires are of great interest as interconnects in future nanoelectronic circuits. They also represent important systems for understanding the complexity of electronic interactions and conductivity in one-dimension. We have fabricated exceptionally long and uniform YSi 2 nanowires via self-assembly of yttrium atoms on Si(001). The thinnest wires represent one of the closest realizations of the isolated Peierls chain, exhibiting van-Hove type singularities in the onedimensional density of states and charge order fluctuations below 150 K. The structure of the wire was determined though a detailed comparison of scanning tunneling microscopy data and firstprinciples calculations. Sporadic broadenings of the wires' cross section imply the existence of a novel metal-semiconductor junction whose electronic properties are governed by the finite-sizeand temperature-scaling of the charge ordering correlation.One-dimensional (1D) conductors have always captured the imagination of physicists. While a strictly 1D material remains a theoretical construct, a vast number of materials can be viewed as quasi 1D, making them interesting test cases for theoretical predictions and nanoscale applications. Classic examples include charge transfer complexes such as TTF-TCNQ and the Bechgaard salts, which have been studied extensively because of their unusual electrical properties and potential applications as organic conductors (1). These compounds can be viewed as macroscopic ensembles of weakly-coupled quantum chains. They are also textbook illustrations of the venerable Peierls theorem, which states that a 1D metallic chain should be unstable with respect to a symmetry-lowering modulation of the atomic coordinates and valence-charge density (2). The mechanism driving this instability entails the strong coupling between the vibrational modes of the lattice and electrons near the Fermi level. The ground state of a Peierls chain is insulating but the band gap decreases with increasing temperature and metallicity is ultimately restored via a second order phase transition.This simple picture contains some interesting caveats. First of all, the Peierls theory ignores thermodynamic fluctuations. In the 1D limit, thermal fluctuations always destroy long-range order so in principle there is no phase transition (3). Paradoxically, 2D or 3D interchain coupling appears essential for observing the Peierls phase transition in real systems (3). Secondly, the Peierls theory completely ignores electron-electron correlations. Depending on the various interaction parameters, the Peierls transition may be preempted by a competing 'many-body' ground state such as a spin density wave state or Luttinger liquid (1-3). To date, the closest experimental realization of a 1D model system is, arguably, the single-wall carbon nanotube (4-7). Yet, there is no experimental evidence of a Peierls distortion in nanotubes, possibly because the tube diameters are not small enough for observing the transition (5-7). Some experiments even suggest the ex...

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“…This double-domain 16 × 2 reconstruction is not a facet [29], it is unlike the two-domain 2 × 1 reconstruction of the nominally flat Si(1 0 0) surface because the two domains of the Si(1 0 0)-2 × 1 surface are formed at a single-height atomic step. Therefore, the 2D self-organization of the silicide nanomeshes cannot occur on the double-domain Si(1 0 0)-2 × 1 surface because the monatomic step would terminate the further growth of the silicide NWs [4,5].…”

Section: Coplanar Double-domain Si(1 1 0)-16 × 2 Surfacementioning

confidence: 99%

“…Because self-assembled rare-earth (RE) silicide NWs with high aspect ratios have potential applications as low-resistance interconnects in nanoelectronic devices and also exhibit highly anisotropic band structures along the NW direction [10], the controlled self-organization of perfectly-ordered RE silicide nanomeshes is one of the most important long-term goals of the bottom-up approach for well-defined crossbar nanocircuits. However, most self-organization processes of silicide nanomeshes are not entirely controllable [4,5,[11][12][13]. Moreover, the large variation in the NW sizes could substantially alter the electronic structures and the charge transport properties along their length [14,15], making these NWs inappropriate as components in largescale integrated devices for practical applications.…”

Section: Introductionmentioning

confidence: 99%

“…Currently, tremendous efforts have been devoted to the controlled fabrication of two-dimensional (2D) networks, consisting of two crossed nanowire (NW) arrays [1][2][3][4][5][6], with the goal to create crossbar nanoarchitectures [2,7,8]. Such nanomeshes have been used as polyvalent building blocks for nanoelectronic and nanophotonic devices, including field-effect transistors, logic gates, light-emitting diodes, demultiplexers, and memory circuits.…”

Section: Introductionmentioning

confidence: 99%

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