Atomically precise self-organization of perfectly ordered gadolinium–silicide nanomeshes controlled by anisotropic electromigration-induced growth on Si(1 1 0)-16 × 2 surfaces

Hong, Ie-Hong; Chen, Tsung-Ming; Tsai, Yung-Feng

doi:10.1016/j.apsusc.2015.04.094

Cited by 5 publications

(3 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For instance, novel ultralow resistivity (i.e., ρ 10 μ cm) TM-based silicides are intended to be used as interconnects or gate electrodes for the next generation CMOS technology [7][8][9][10][11]. Compared to noble metals this material class provides appropriate Schottky barrier heights, thermal stability, and high robustness against electromigration processes [12].…”

Section: Introductionmentioning

confidence: 99%

Atomic size effects studied by transport in single silicide nanowires

et al. 2016

View full text Add to dashboard Cite

Ultrathin metallic silicide nanowires with extremely high aspect ratios can be easily grown, e.g., by deposition of rare earth elements on semiconducting surfaces. These wires play a pivotal role in fundamental research and open intriguing perspectives for CMOS applications. However, the electronic properties of these one-dimensional systems are extremely sensitive to atomic-sized defects, which easily alter the transport characteristics. In this study, we characterized comprehensively TbSi 2 wires grown on Si(100) and correlated details of the atomic structure with their electrical resistivities. Scanning tunneling microscopy (STM) as well as all transport experiments were performed in situ using a four-tip STM system. The measurements are complemented by local spectroscopy and density functional theory revealing that the silicide wires are electronically decoupled from the Si template. On the basis of a quasiclassical transport model, the size effect found for the resistivity is quantitatively explained in terms of bulk and surface transport channels considering details of atomic-scale roughness. Regarding future applications the full wealth of these robust nanostructures will emerge only if wires with truly atomically sharp interfaces can be reliably grown.

show abstract

Section: Introductionmentioning

confidence: 99%

Atomic size effects studied by transport in single silicide nanowires

et al. 2016

View full text Add to dashboard Cite

show abstract

“…From an industrial application perspective, it has been considered to be a promising material for p-type high-performance metal-oxide-semiconductor fieldeffect transistors (p-MOSFETs) [1,2] because the hole mobility of Si(110) is twice that of the other Si planes [3]. For surface science research, Si(110) has been used as a template substrate for self-assembled nanowires [4][5][6], nanomeshes [7], and nanodots [8,9]. Particularly, the Si(110)-(16×2) reconstructed surface is considered to be an ideal 1D template [4,7,9].…”

Section: Introductionmentioning

confidence: 99%

“…For surface science research, Si(110) has been used as a template substrate for self-assembled nanowires [4][5][6], nanomeshes [7], and nanodots [8,9]. Particularly, the Si(110)-(16×2) reconstructed surface is considered to be an ideal 1D template [4,7,9]. Since this reconstructed surface is reported to be two dimensionally chiral, it has been the subject of many investigations, for example, in efforts to control the chirality for reliable production of nanowires and other nanostructures [7,[10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

Yamamoto

Izumi

Miki

et al. 2020

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

The atomic arrangement of the Si(110)-(16×2) reconstruction was directly observed using noncontact atomic force microscopy (NC-AFM) at 78 K. The pentagonal structure, which is the most important building block of the reconstruction, was concluded to consist of five atoms, while only four or five spots (depending on tip bias) have been reported with scanning tunneling microscopy (STM). Single atoms were determined to exist near step edges between upper and lower terraces, which have not been reported using STM. These findings are key evidence for establishing an atomic model of the Si(110)-(16×2) reconstruction, which indeed has a complex structure.

show abstract